U. Kaiser
"The effect of growth condition on the structure of 2H-AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy"
J. Mater. Res., Vol. 14, No. 5, May 1999

M. Adamik, G. Sáfrán, P. B. Barna, I. Tomov, U. Kaiser, S. Laux, J. Jinschek and W. Richter
"Structure Evolution of NdF3 Optical Thin Films"
Phys. Stat. Sol. (a) 175, 637 (1999)

U. Kaiser, I. Khodos, P. D. Brown, A. Chuvilin, M. Albrecht, C.J. Humphreys, A. Fissel and W. Richter
"A transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxy"
J. Mater. Res., Vol 14, No. 8, Aug. 1999. <link typo3/paper/Aug1999.pdf _blank external-link-new-window>electronic Version</link>, 1.976 kB Adobe Acrobat PDF

G. D. Kipshidze, H. P. D. Schenk, A. Fissel, U. Kaiser, J. Schulze, W. Richter, M. Weihnacht, R. Kunze, and J. Kräuîlich
"Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AlN/Si(111) for application in SAW devices"
Semiconductors 33 (1999) 1241-1246.

G. D. Kipshidze, H. P. D. Schenk, A. Fissel, U. Kaiser, J. Schulze, Wo.Richter, M. Weihnacht, R. Kunze, and J. Kräuîlich
"Molekulyarno-lutchevaya epitaksiya silno rassoglasovannoj po postoyannoj reshetke geterosistemy AlN/Si(111) dlya primeneniya v priborakh poverkhnostnykh akustitcheskikh voln"
Fiz. Tekh. Poluprovodn. 33 (1999) 1372-1378.

U. Kaiser, I.I. Khodos, J. Jinschek, W. Richter
"A TEM study of local non-uniformities in epitaxial 2H-AlN films on Si(111) substrate"
J. Electron Microscopy 48(5) (1999) 545-554.

U. Kaiser, K. Saitoh, K. Tsuda, M. Tanaka
"Application of the CBED method for the determination of lattice parameters of cubic SiC films on 6H SiC substrates"
J. Electron Microscopy 48(3) (1999) 221-233.

U. Kaiser, A. Chuvilin, P.D. Brown, W. Richter
"Origin of Threefold Periodicity in High-Resolution Transmission Electron Microscopy Images of Thin Film Cubic SiC"
Microscopy and Microanalysis 5 (1999) 420-427.

H.P.D. Schenk, U. Kaiser, G.D. Kipshidze, A. Fissel, J. Kräußlich, H. Hobert, J. Schulze, W. Richter
"Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBE"
Mater. Sci. Eng. B 59 (1998) 84-87.

U. Kaiser, A. Chuvilin, W. Richter
"On the pecularities of bright/dark contrast in HRTEM images of SiC polytypes"
Ultramicroscopy, 76 (1999) 21-37.

H.P.D. Schenk, G.D. Kipshidze, U. Kaiser, A. Fissel, J. Kräußlich, J. Schulze, W. Richter
"Investigation of two-dimensional growth of AlN(0001) on Si(111) by plasma-assisted molecular beam epitaxy"
J. Crystal Growth 200 (1999) 45-54.

H.P.D. Schenk, G.D. Kipshidze, M. Weihnacht, R. Kunze, U. Kaiser, J. Schulze, W. Richter
"Growth of AlN on Si(111) by plasma-assisted molecular beam epitaxy: application to surface acoustic wave devices"
Mater. Res. Soc. Symp. Proc. 535, 113 (Materials Research Society, Pittsburg PA, 1999).

U. Kaiser, P.D. Brown, I. Khodos, C.J. Humphreys, H.P.D. Schenk, W. Richter
"The effect of growth condition on the structure of 2H-AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy"
J. Mater. Res. 14 (1999) 2036-2042.

A. Fissel, K. Pfennighaus, U. Kaiser, B. Schröter, W. Richter
"Mechanisms of homo- and heteroepitaxial growth of SiC on α-SiC(0001) by solid-source molecular beam epitaxy"
J. Electron. Mater. (Special issue: III-V Nitrides and Silicon Carbide) 28 (3) (1999) 206-213.