Invited Speakers

Alexandros Georgakilas (FORTH, Greece)
“Progress in the heteroepitaxy of III-nitrides by plasma assisted MBE ”

Jan Grünenpütt (UMS GmbH, Ulm, Germany)
“UMS Gallium Arsenide pHEMT Technologies - from C- to W-Band"

Thomas Bartnitzek (VIA electronic GmbH, Hermsdorf, Germany)
“Thermal management with LTCC-packages"

Martin Eickoff (University of Giessen , Germany)
“Group III-nitride nanostructures for chemical transducers “

Jannik Meyer  (Ulm University, Germany)
“Graphene – Two-dimensional carbon at atomic resolution“

Oliver Williams (IAF Freiburg, Germany)
“Diamond Growth for MEMS applications “

Dimitris Pavlidis (TU Darmstadt, Germany)
Energy Harvesting: from MEMS to Oxide Semiconductors

Peder Bergman (Linköping University, Sweden)
“SiC - a semiconductor for demanding automotive applications”

Andreas Wieck (Ruhr-University Bochum, Germany )
“Lateral structures by implantation of focused ion beams in III-V semiconductors“

Debdeep Jena (University of Notre Dame, USA)
“Graphene-based Devices “

Daniel Kaeblein (Max-Plank Institute Stuttgart, Germany)  
“Top-gate ZnO nanowire transistors with ultrathin organic gate dielectric”

Matthias Schreck (University Augsburg, Germany)
“Single crystal diamond films on silicon: A semiconductor material for
the formation of wide band gap heterostructures”