Jun.-Prof. Dr.-Ing. Steffen Strehle

  • Chair: Semiconductor Devices
  • previous positions: Harvard University (USA), TU Dresden (Germany), IFW Dresden (Germany)

Research interests

  • bottom-up synthesis and properties of nanostructures
  • advanced nanowire device fabrication
  • nanowire sensors & electron devices
  • nanostructured semiconductor surfaces for photocatalytic applications

Recent Publications

T. Dlugosch, A. Chnani, P. Muralidhar, A. Schirmer, J. Biskupek, S. Strehle: Thermal oxidation synthesis of crystalline iron-oxide nanowires on low-cost steel substrates for solar water splitting, Semiconductor Science and Technology 32 (2017) 084001 (10pp)

A. Moeinian, N. Hibst, D. Geiger, J. Biskupek, S. Strehle: Crystallinity of Silicon-Shells Deposited onto Germanium and Silicon Nanowires for Core-Shell Nanostructures and Nanotubes, IEEE Transactions on Nanotechnology 99 (2017) pages to be assigned (available online)

P. Knittel, N. Hibst, B. Mizaikoff, S. Strehle, C. Kranz: Focused Ion Beam-Assisted Fabrication of Soft High-Aspect-Ratio Silicon Nanowire Atomic Force Microscopy Probes, Ultramicroscopy 179 (2017) 24–32

S. Strehle: Positionierung von Nanodrähten: Oberflächenkontrollierter Kontaktdruck für eine effiziente Fertigung von Nanodrahtsystemen, eingeladener Artikel für GIT Laborjournal, Wiley Verlag, 2017 (no peer-review; in print)

T. Sandner, A.M. Steinbach, P. Knittel, T. Diemant, R. J. Behm, S. Strehle, C. Kranz, Boris Mizaikoff: Silanization of Sapphire Surfaces for Optical Sensing Applications, ACS Sensors, DOI: 10.1021/acssensors.6b00786

D. Heinz, F. Huber, M. Spiess, M. Asad, L. Wu, O. Rettig, D. Wu, B. Neuschl, S. Bauer, Y. Wu, S. Chakrabortty, N. Hibst, S. Strehle, T. Weil, K. Thonke, F. Scholz: GaInN Quantum Wells as Optochemical Transducers for Chemical Sensors and Biosensors, IEEE Journal of Selected Topics in Quantum Electronics, 23 (2017)

A.M. Steinbach, S. Binte Kazemi, S. Strehle: Solid-liquid-vapour etching of silicon nanostructures using hydrogen plasma , Physica Status Solidi A 213 (2016) 2921–2926

N. Hibst & S. Strehle: Direct synthesis of electrically integrated silicon nanowires forming 3D electrodes, Physica Status Solidi A 213 (2016) 2901–2905

N. Hibst, A.M. Steinbach, S. Strehle: Fluidic and Electronic Transport in Silicon Nanotube Biosensors, MRS Advances (2016) pp.1–6. doi: 10.1557/adv.2016.330

D. Roßkopf, S. Strehle: Surface-controlled Contact Printing for Nanowire Device Fabrication on a Large Scale, Nanotechnology 27 (2016) 185301 (8pp); editor selected featured article with cover image

B. Abt, A. Hartmann, A. Pasquarelli, S. Strehle, B. Mizaikoff, C. Kranz: Electrochemical determination of sulphur-containing pharmaceuticals using boron-doped diamond electrodes, Electroanalysis, 28 (2016) XXX-XXX, DOI: 10.1002/elan.201501150

A. Steinbach, S. Jenisch, P. Pakhtiarpour, M. Amirkhani, S. Strehle: Direct Patterning of Ionic Polymers with E-Beam Lithography, MRS Advances 1 (2016) 45-50

N. Hibst, P. Knittel, J. Biskupek, C. Kranz, B. Mizaikoff, S. Strehle: The Mechanisms of Platinum-Catalyzed Silicon Nanowire Growth, Semiconductor Science and Technology, 31 (2016) 025005 (7pp), editor selected featured article with cover image

A. Steinbach, T. Sandner, B. Mizaikoff, and S. Strehle: Gas phase silanization for silicon nanowire sensors and other lab-on-a-chip systems, Physica Status Solidi C 13 (2016) 135-141, featured article with cover image

R.A.R. Leute, J. Wang, et. al., T. Meisch, D. Heinz, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kneissl, S. Jenisch, S. Strehle, F. Scholz: Embedded GaN Nanostripes on c-sapphire for DFB Lasers with semipolar Quantum Wells, Physica Status Solidi B, 253 (2016) 180-185

P. Muralidhar, F.W. Hartl, L.A. Kibler, A. Pasquarelli, S. Strehle: Electrochemical Performance of Boron-Doped Diamond Films on Tungsten Rods with Silicon Interlayer, Physica Status Solidi A, 212 (2015) 2958–2963

N. Hibst, P. Knittel, C. Kranz, B. Mizaikoff, S. Strehle: Beam-deposited platinum as versatile catalyst for bottom-up silicon nanowire synthesis, Applied Physics Letters 105 (2014) 153110 (open access)

S.T. Jäger & S. Strehle: Design parameters for enhanced photon absorption in vertically aligned silicon nanowire arrays, Nanoscale Research Letters 9 (2014) 511 (open access)

R. Gao, S. Strehle, B. Tian, T. Cohen-Karni, P. Xie, X. Duan, Q. Qing and C.M. Lieber: Outside Looking In: Nanotube Transistor Intracellular Sensors, Nano Letters 12 (2012) 3329-3333



Office: 45.2.260

Albert-Einstein-Allee 45
89081 Ulm / Germany

Phone: +49 731-50-26159
Fax: +49 731-50-26155


on appointment


  • Fundamentals of Semiconductor Devices: ENGB 5001
  • Materials Science II
  • Electronic and Optical Materials
  • Functional Nanostructures and Nanodevices
  • Scientific Writing and Publishing