Invited talks

• Bergunde T., Azurspace, Germany:
  

  Production, development and perspectives of Azur's multijunction solar cells
  Tuesday, June 8  -   09:00

• Creighton J. R., Sandia Labs, U.S.A.:
  The impact of gas-phase and surface chemistry during group-III nitride MOVPE
  Monday, June 7  -   14:30

• Decobert J., Alcatel-Thales III-V Lab, Marcoussis, France:
  

  Selective Area Growth for Photonic Integrated Circuits
  Monday, June 7  -   15:15

• Fukui T., Hokkaido Univ., Japan:
  

  III-V semiconductor nanowires and core-shell nanowires and their device applications
  Monday, June 7  -   09:30

• Hails J., QinetiQ, Malvern, UK:
  

  p-type doping of narrow gap II-VI materials by MOVPE
  Tuesday, June 8  -   09:45

• Leszczynski M., TopGaN Warsaw, Poland:
  

  MOVPE and MBE in nitride laser-diode technology
  Wednesday, June 9  -   09:45

• Lundin W., Ioffe St. Petersburg, Russia:
  

  Optimization of III-N heterostructures growth by MOVPE via surface processes control
  Monday, June 7  -   10:15

• Wang C., MIT Lincoln Lab, U.S.A.:
  

  Strain-Compensated GaInAs/AlInAs/InP Quantum Cascade Lasers
  Wednesday, June 9  -   09:00