Journal Publications 2012

• Z. Andreev, F. Römer, and B. Witzigmann;
  Simulation of InGaN quantum well LEDs with reduced internal polarization
  Phys. Status Solidi A 209, (2012) 487–490. (link)  
  
  
• H. Jönen, H. Bremers, U. Rossow, T. Langer, A. Kruse, L. Hoffmann, J. Thalmair, J. Zweck, S. Schwaiger, F. Scholz and A. Hangleiter;
  Analysis of indium incorporation in non- and semipolar GalnN QW structures: comparing x-ray diffraction and optical properties
  Semicond. Sci. Technol. 27 (2012) 024013 1–8. (link)
  
  
• S. Ploch, T. Wernicke, D.V. Dinh, M. Pristovsek, and M. Kneissl;
  Surface diffusion and layer morphology of (11-22) GaN grown by metal-organic vapor phase epitaxy
  J. Appl. Phys. 111 (2012). (accepted)
  
  
• R. Ravash, P. Veit, M. Müller, G. Schmidt, A. Dempewolf, T. Hempel, J. Bläsing, F. Bertram, A. Dadgar, J. Christen, and A. Krost;
  Growth and stacking fault reduction in semi-polar GaN films on planar Si (112) and Si (113)
  Phys. Status Solidi C, (2012). (link)
  
  
• E. Sakalauskas, M. Wieneke, A. Dadgar, G. Gobsch, A. Krost, and R. Goldhahn
  Optical anisotropy of a-plane Al_0.8 In_0.2 N grown on an a-plane GaN pseudosubstrate
  Phys. Status Solidi A 209, (2012) 29-32. (link)
  
  
• F. Scholz;
  Semipolar GaN grown on foreign substrates: a review
  Semicond. Sci. Technol. 27 (2012) 024002 1–15. (link)
  
  
• F. Scholz, S. Schwaiger, J. Däubler, I. Tischer, K. Thonke, S. Neugebauer, S. Metzner, F. Bertram, J. Christen, H. Lengner, J. Thalmair, and J. Zweck;
  Semipolar GaInN quantum well structures on large area substrates
  Phys. Status Solidi B 249, (2012) 464–467. (link)
  
  
• T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz and M. Kneissl;
  Indium incorporation and emission wavelength of polar, nonpolar, and semipolar InGaN quantum wells
  Semicond. Sci. Technol. 27 (2012) 024014 1–7. (link)