Conference Contributions 2009

  • B. Bastek, O. August, J. Christen, M. Wieneke, A. Dadgar, J. Bläsing, A. Krost, P. Veit and U. Wendt;
    Microscopic correlation of optical and structural properties of sponteneously formed nonpolar and semipolar GaN growth domains on r-plane sapphire

    ICNS-8, Jeju Island, Korea 2009, talk.

  • F. Bertram, S. Metzner, J. Christen, T. Wunderer and F. Scholz;
    Carrier relaxation in semi-polar InGaN/GaN Quantum Wells investigated by picosecond-time resolved cathodoluminescence spectroscopy

    SPIE Photonics West, San Jose, CA, USA 2009, talk.

  • F. Bertram, S. Metzner, J. Christen, T. Wunderer, S. Schwaiger and F. Scholz;
    Microscopic correlation of real structure and recombination kinetics in InGaN quantum well directly imaged using spatio-time-resolved cathodoluminescence spectroscopy

    ICNS-8, Jeju Island, Korea 2009, poster.

  • F. Bertram;
    Microscopic Correlation of structural, electronical and optical properties of semi- and non-polar Group-III-Nitrides

    DPG Spring Meeting, Dresden 2009, invited talk.

  • F. Bertram and J. Christen;
    Nanoscale time resolved carrier relaxation phenomena in highly efficient nitrides LED structures

    ICAM, Rio de Janeiro, Brasilien 2009, invited talk.

  • F. Bertram, S. Metzner, J. Christen, M. Jetter, C. Wächter and P. Michler;
    Kathodolumineszenz-Mikroskopie an InGaN/GaN Pyramiden

    DPG Spring Meeting, Dresden 2009, talk.

  • J. Christen;
    Nanoscale time resolved carrier relaxation phenomena in semi-polar InGaN/GaN Quantum Wells nitrides studied by picosecond time resolved cathodoluminescence

    ICNS-8, Jeju Island, Korea 2009, invited talk.

  • J. Danhof, C. Vierheilig, U. T. Schwarz, T. Meyer, M. Peter, B. Hahn, M. Maier and J. Wagner;
    Sub micrometer photoluminescence fluctuations in green light emitting InGaN/GaN quantum wells

    DPG Spring Meeting, Dresden 2009, talk.

  • J. Danhof, C. Vierheilig, U. T. Schwarz, T. Meyer, M. Peter and B. Hahn;
    Local IQE Measurements on a Sub Micro Meter Length Scale on green light emitting InGaN/GaN quantum wells

    ICNS-8, Jeju Island, Korea 2009, talk.

  • A. D. Dräger, H. Jönen, U. Rossow, H. Bremers, D. Schenk, P. Demolon, J. Duboz, B. Corbett and A. Hangleiter;
    Towards green lasing: polar and nonplar

    DPG Spring Meeting, Dresden 2009, talk.

  • M. Finke, D. Fuhrmann, H. Jönen, H. Bremers, U. Rossow and A. Hangleiter;
    Screening Dynamics of the Spontaneous Polarisation Field in GaInN/GaN Quantum Well Structures

    DPG Spring Meeting, Dresden 2009, talk.

  • M. Frentrup, S. Ploch, M. Pristovsek and M. Kneissl;
    MOVPE of semipolar GaN on m-plane sapphire

    DPG Spring Meeting, Dresden 2009, talk.

  • A. Hangleiter, T. Langer, H. Jönen, D. Fuhrmann and U. Rossow;
    Recombination of free excitons in polar and nonpolar nitride quantum wells

    International Conference on Optics of Excitons in Confined Systems, Madrid 2009, poster.

  • C. Hums, L. Groh, A. Dadgar, J. Bläsing, T. Hempel, F. Bertram, J. Cieslak, W. Witthuhn, J. Christen and A. Krost;
    Metal organic vapor phase epitaxy of InGaN/AlInGaN MQW structures
    ICNS-8, Jeju Island, Korea 2009, talk.

  • C. Hums, A. Gadanecz, A. Dadgar, J. Bläsing, A. Franke, T. Hempel, A. Dietz, J. Christen and A. Krost;
    Metal Nanoparticle Induced Blinking in green InGaN quantum wells in nitride light emitters

    DPG Spring Meeting, Dresden 2009, talk.

  • H. Jönen, U. Rossow, H. Bremers, L. Hoffmann, T. Langer, D. Dräger, A. Hangleiter, S. Metzner, F. Bertram,
    J. Christen, C. Vierheilig and U. Schwarz;
    Growth and properties of c-plane and m-p
    lane GaInN quantum wells suitable for bluegreen laser applications
    EWMOVPE XIII, Ulm 2009, poster.

  • H. Jönen, T. Langer, D. Dräger, L. Hoffmann, H. Bremers, U. Rossow, S. Metzner, F. Bertram, J. Christen and A. Hangleiter;
    GaInN quantum wells with high indium concentrations on polar and nonpolar surfaces

    DPG Spring Meeting, Dresden 2009, talk.

  • H. Jönen, U. Rossow, H. Bremers, A. D. Dräger, T. Langer, S. Metzner, F. Bertram, J. Christen and A. Hangleiter;
    Wachstum und Charakterisierung von GaInN Quantenfilmen für Laser im blau-grünen Spektralbereich

    DGKK Workshop Semiconductor Epitaxy, Berlin 2009, talk.

  • H. Jönen, H. Bremers, U. Rossow, A. D. Dräger, T. Langer, L. Hoffmann, S. Metzner, F. Bertram, J. Christen,
    L. Schade, U. T. Schwarz and A. Hangleiter;
    Effective bangap of m-plane GaInN/GaN QW structures grown on m-plane SIC

    ICNS-8, Jeju Island, Korea 2009, talk.

  • C. Karbaum, F. Bertram, S. Metzner, J. Christen, T. Wunderer and F. Scholz;
    Spectrally resolved cathodoluminescence microscopy of an InGaN single quantum well on hexagonally inverted GaN pyramids

    DGKK Workshop Semiconductor Epitaxy, Berlin 2009, talk.

  • R. Kirste, A. Hoffmann, S. Metzner, F. Bertram, T. Hempel, J. Christen, T. Wunderer and F. Scholz;
    Luminescence and Raman Spectroscopy on InGaN/GaN Prism Structures

    E-MRS 2009 Spring Meeting, Strasbourg, France 2009, poster.

  • T. Langer, H. Jönen, C. Netzel, U. Rossow and A. Hangleiter;
    Radiative recombination in GaInN quantum wells investigated via time-resolved photoluminescence

    DPG Spring Meeting, Dresden 2009, talk.

  • S. Metzner, F. Bertram, T. Hempel, J. Christen, S. Schwaiger and F. Scholz;
    Microscopic luminescence properties of a-plane GaN MOVPE templates overgrown by HVPE

    E-MRS 2009 Spring Meeting, Strasbourg, France, 2009, talk.

  • S. Metzner, F. Bertram, T. Hempel, J. Christen, M. Jetter, C. Wächter and P. Michler;
    Highly Spatially, Spectrally- and Time-Resolved Cathodoluminescence Microscopy of InGaN Quantum Wells on Hexagonal GaN Pyramids

    DGKK Workshop Semiconductor Epitaxy , Berlin 2009, talk.

  • S. Metzner, F. Bertram, J. Christen, T. Wunderer and F. Scholz;
    Mikroskopische Lumineszenzuntersuchungen an grün emittierenden InGaN/GaN MQWs auf semi-polaren {1101} Facetten

    DPG Spring Meeting, Dresden 2009, talk.

  • S. Metzner, F. Bertram, J. Christen, T. Wunderer and F. Scholz;
    Nano-scale luminescence properties of InGaN MQWs on {1101} GaN facets

    SPIE Photonics West, San Jose, CA, USA 2009, talk.

  • S. Metzner, F. Bertram, J. Christen, T. Wunderer, F. Lipski, S. Schwaiger and F. Scholz;
    Direct Microscopic Correlation of Real Structure and Recombination Kinetics in Semipolar Grown InGaN Quantum Wells

    MRS Fall Meeting, Boston, MA, USA 2009, talk.

  • H. J. Möstl, C. Vierheilig, U. T. Schwarz, T. Wunderer, S. Schwaiger, F. Lipski and F. Scholz;
    Characterization of photoluminescence emission from semipolar {1-101} InGaN quantum wells

    DPG Spring Meeting, Dresden 2009, talk.

  • S. Ploch, M. Frentrup, T. Wernicke, M. Pristovsek, M. Weyers and M. Kneissl;
    MOVPE growth of smooth semipolar GaN on {10-10} sapphire

    ICNS-8, Jeju Island, Korea 2009, talk.

  • S. Ploch, M. Frentrup, T. Wernicke, M. Pristovsek, M. Weyers and M. Kneissl;
    Growth of smooth semipolar GaN on {10-10} sapphire by metalorganic vapor phase epitaxy

    iNow, Stockholm, Berlin 2009, talk.

  • J. Rass, S. Ploch, P. Vogt, M. Kneissl, T. Wernicke, L. Redaelli and S. Einfeldt;
    Facet formation and ohmic contacts for laser diodes on non- and semipolar GaN

    DPG Spring Meeting, Dresden 2009, talk.

  • J. Rass, T. Wernicke, W. John, R. Kremzow, S. Einfeldt, P. Vogt and M. Kneissl;
    Facet formation for laser diodes on non- and semipolar GaN

    ICNS-8, Jeju Island, Korea 2009, talk.

  • J. Rass, T. Wernicke, W. John, R. Kremzow, S. Einfeldt, P. Vogt, O. Krüger and M. Kneissl;
    Facet formation and p-type contacts for laser diodes on non- and semipolar GaN

    iNow, Stockholm, Berlin 2009, talk.

  • U. Rossow, H. Jönen, T. Langer, A. Dräger, L. Hoffmann, H. Bremers, A. Hangleiter, S. Metzner, F. Bertram and J. Christen;
    Indium incorporation and homogeneity in InGaN quantum wells for long wavelength light emitters

    ISCS, Santa Barbara, USA 2009, talk.

  • W. G. Scheibenzuber, U. T. Schwarz, R. G. Veprek, J. Kupec, B. Witzigmann and A. Hangleiter;
    Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes

    ICNS-8, Jeju Island, Korea 2009, talk.

  • S. Schwaiger, F. Lipski, T. Wunderer and F. Scholz;
    Influence of slight misorientations of r-plane sapphire substrates on the growthof nonpolar
    a-plane GaN layers via HVPE

    ICNS-8, Jeju Island, Korea 2009, poster.

  • G. Schmidt, P. Veit, O. August, M. Müller, S. Petzold, F. Bertram, S. Metzner, M. Wieneke, A. Dadgar, A. Krost, and J. Christen;
    Structural and optical properties of defects in silicon doped a-plane GaN
    E-MRS 2009 Spring Meeting, Strasbourg, France, 2009, poster.

  • S. Schwaiger, T. Wunderer, F. Lipski and F. Scholz;
    Growth of nonpolar a-plane GaN on r-plane Sapphire via HVPE

    DPG Spring Meeting, Dresden 2009, talk.

  • S. Schwaiger, F. Lipski, T. Wunderer and F. Scholz;
    Growth of a-plane GaN layers on slightly misoriented r-plane sapphire substrates

    EWMOVPE XIII, Ulm 2009, poster.

  • U. T. Schwarz;
    Optical gain and birefringence in semipolar (Al,In)GaN

    III Workshop on Physics and Technology of Semiconductor Lasers, Goldopiwo, Poland 2009, talk.

  • U. T. Schwarz;
    Emission of biased green quantum wells in time and space domain

    SPIE Photonics West, San Jose, USA 2009, talk.

  • U. T. Schwarz, L. Schade, F. Bertram, S. Metzner, J. Christen, T. Wunderer and F. Scholz;
    Quantitative Comparison of Cathodoluminescence and Micro-Photoluminescence Spectroscopy:
    InGaN Quantum Wells Grown on Inverse Pyramids

    ICNS-8, Jeju Island, Korea 2009, talk.

  • U. T. Schwarz, J. Danhof, L. Schade, T. Wernicke, M. Weyers and M. Kneissl;
    Micro-photoluminescence study of InGaN quantum wells grown on c-plane, semipolar and nonpolar orientation

    Photonics West, San Jose, USA 2009, talk.

  • C. Wächter, M. Jetter and P. Michler;
    Towards electroluminescence of InGaN/GaN Micropyramids

    DGKK Workshop Semiconductor Epitaxy, Berlin 2009, talk.

  • C. Wächter, F. Bertram, S. Metzner, J. Christen and P. Michler;
    Structural and optical properties of InGaN nanostructures on semipolar GaN pyramid facets
    ICNS-8, Jeju Island, Korea 2009, talk.

  • C. Wächter, M. Jetter and P. Michler;
    Structural investigations of the influence of process parameters on the quality of semipolar substrates

    EWMOVPE XIII, Ulm 2009, poster.

  • T. Wernicke;
    Growth of nonpolar nitrides: the substrate dilemma

    DPG Spring Meeting, Dresden 2009, invited talk.

  • T. Wernicke, V. Hoffmann, C. Netzel, H. J. Möstl, L. Schade, H. Wenzel, S. Ploch, A. Knauer, U. Schwarz,
    M. Weyers and M. Kneissl;
    Indium incorporation in InGaN quantum wells on nonpolar {10-10}, semipolar {101-1}, {10-12}, {11-22} and polar {0001} GaN substrates

    ICNS-8, Jeju Island, Korea 2009, talk.

  • M. Wiedenmann, M. Feneberg, R. Sauer, K. Thonke, T. Wunderer, S. Schwaiger, F. Lipski and F. Scholz;
    Spectral behaviour of semipolar GaInN / GaN on {11-22} and {1-101} semipolar facets

    DPG Spring Meeting, Dresden 2009, talk.

  • M. Wieneke, B. Bastek, O. August, P. Veit, A. Dadgar, J. Bläsing, J. Christen, U. Wendt and A. Krost;
    Mikrostrukturelle Eigenschaften von unpolaren und semipolaren GaN-Schichten auf r-planarem Saphir

    DGKK -Workshop Semiconductors Epitaxy, Berlin 2009, talk.