Conference Contributions 2010

  • F. Bertram, S. Metzner, J. Christen, M. Jetter, C. Wächter and P. Michler;
    Cathodoluminescence Microscopy of self-organized InGaN nano-structures on GaN Pyramids
    M&M, Portland, OR, USA 2010, talk.

  • F. Bertram, C. Karbaum, S. Metzner and J. Christen;
    Optical and structural properties of non-polar m-plane GaN on patterned Si substrates microscopic correlation of luminescence with ELO growth domains
    IWN, Tampa, USA 2010, talk.

  • F. Bertram, S. Metzner, J. Christen, M. Jetter, C. Wächter and P. Michler;
    Direct Microscopic Correlation of Real Structure and Recombination Kinetics in Semipolar Grown InGaN quantum well grown on of hexagonal GaN pyramids

    ICMOVPE XV, Lake Tahoe, CA, USA 2010, talk.

  • F. Bremers, A. Schwiegel, H. Jönen, U. Rossow, M. Brendel, A. D. Dräger, A. Hangleiter, S. Schwaiger and F. Scholz;
    Identical Indium incorporation in polar and nonpolar GaInN quantum wells: A high resolution X-ray diffraction study
    IWN, Tampa, USA 2010, talk.
  • J. Christen, S. Metzner, F. Bertram, T. Wunderer, F. Lipski, S. Schwaiger and F. Scholz;
    Spatio-time-resolved cathodoluminescence spectroscopy imaging microscopic correlation of real structure and recombination kinetics in InGaN quantum wells

    SPIE Photonics West, San Francisco, CA, USA 2010, invited talk.

  • J. Christen, F. Bertram, S. Metzner, T. Wunderer, F. Lipski, S. Schwaiger and F. Scholz;
    Microscopic energy relaxation in semipolar InGaN quantum wells via real space transfer-directly imaged by spatio-time-resolved cathodoluminescence spectroscopy

    IWN Tampa, USA 2010, talk.

  • J. Christen, F. Bertram, S. Metzner, T. Wunderer, F. Lipski, S. Schwaiger and F. Scholz;
    Spatio-time-resolved cathodoluminescence spectroscopy imaging: microscopic recombination kinetics in semi-polar InGaN quantum wells

    M&M, Portland, OR, USA 2010, invited talk.

  • J. Däubler, S. Schwaiger, I. Tischer, R. Leute, T. Wunderer, K. Thonke and F. Scholz;
    (10-11) GaN auf vorstrukturiertem Saphir: Wachstum, Charakterisierung und Lumineszenz von InGaN QWs
    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • A. Dempewolf, M. Müller, F. Bertram, T. Hempel, R. Ravash, A. Dadgar, A. Krost and J. Christen;
    Luminescence properties of GaN grown on Si{211} and Si{311} by MOVPE

    IWN, Tampa, USA 2010, talk.

  • M. Finke, H. Jönen, H. Bremers, U. Rossow and A. Hangleiter;
    Behaviour of the spontaneous polarisation field in polar and nonpolar GaInN/GaN quantum well structures

    DPG Spring Meeting, Regensburg 2010, talk.

  • M. Frentrup, S. Ploch, M. Pristovsek and M. Kneissl;
    Atomic model of the interface between m-plane sapphire and semi-polar GaN

    DPG Spring Meeting, Regensburg 2010, talk.

  • M. Frentrup, S. Ploch, M. Pristovsek and M. Kneissl;
    Crystallography of semipolar group-III nitrides on {10-10} m-plane sapphire substrates

    iNow Beijing/Changchun 2010, poster.

  • L. Groh, C. Hums, J. Bläsing, A. Dadgar and A. Krost;
    MOVPE-Wachstum und röntgenographische Charakterisierung von AlInGaN
    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • A. Hangleiter, H. Jönen, A. D. Dräger, T. Langer, H. Bremers and U. Rossow;
    Materials issues with GaN-based blue-green light emitters

    Materials for Energy, Karlsruhe 2010, talk.

  • L. Hoffmann, H. Bremers, H. Jönen, U. Rossow and A. Hangleiter;
    TEM Investigation of c- and m-plane GaInN/GaN quantum well structures with high Indium Content

    DPG Spring Meeting, Regensburg 2010, poster.

  • H. Jönen, U. Rossow, H. Bremers, L. Hoffmann, A. D. Dräger, M. Brendel, T. Langer, S. Metzner, F. Bertram, J. Christen, J. Thalmair, J. Zweck, L. Schade, U. T. Schwarz and A. Hangleiter;
    Highly efficient light emission from natural quantum wires formed by stacking faults intersecting nonpolar GaInN quantum wells

    ICPS, Seoul, Korea 2010, poster.

  • H. Jönen, H. Bremers, U. Rossow, A. Schwiegel, M. Brendel, A. D. Dräger, A. Hangleiter, S. Schwaiger and F. Scholz;
    Comparable indium incorporation in polar and nonpolar GaInN quantum wells for longwavelength lasers

    E-MRS Fall Meeting, Warsaw, Poland 2010, talk.

  • H. Jönen, U. Rossow, H. Bremers, T. Langer, D. Dräger, L. Hoffmann, S. Metzner, F. Bertram, J. Christen, L. Schade, U. T. Schwarz and A. Hangleiter;
    Influence of stacking faults on the optical properties of m-plane GaInN quantum wells

    DPG Spring Meeting, Regensburg 2010, talk.

  • H. Jönen, H. Bremers, U. Rossow, L. Hoffmann, H. Schwiegel, M. Brendel, A. D. Dräger, S. Schwaiger, F. Scholz, J. Thalmaier, J. Zweck and A. Hangleiter;
    Indium-Einbau in GaInN Quantenfilmen auf polaren und nicht-polaren Oberflächen
    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • C. Karbaum, F. Bertram, S. Metzner, J. Christen, T. Wunderer and F. Scholz;
    Spectrally resolved cathodoluminescence microscopy of an InGaN SQW on hexagonally inverted GaN pyramids

    DPG Spring Meeting, Regensburg 2010, talk.

  • C. Karbaum, F. Bertram, S. Metzner, J. Christen, X. Ni, N. Izyumskaya, V. Avrutin, Ü. Özgür and H. Morkoc;
    Spatially resolved cathodoluminescence spectroscopy of InGaN SQWs on m-plane GaN
    grown on patterned Si(112) substrate
    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • R. A. R. Leute, K. Forghani, F. Lipski, S. Schwaiger and F. Scholz;
    Dreidimensionale AlGaN-Strukturen als Wellenleiter Mantel für semipolare Laserstrukturen
    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • S. Metzner, F. Bertram, J. Christen, T. Wunderer, F. Lipski, S. Schwaiger and F. Scholz;
    Microscopic correlation of real structure and recombination kinetics in semipolar InGaN SQW using spatio-time-resolved cathodoluminescence

    DPG Spring Meeting Regensburg 2010, talk.

  • S. Metzner, F. Bertram, J. Christen, M. Jetter, C. Wächter and P. Michler;
    Cathodoluminescence microscopy of self-organized InGaN nanostructures in GaN pyramids

    SPIE Photonics West, San Francisco, CA, USA 2010, talk.

  • S. Metzner, S. Neugebauer, F. Bertram, T. Hempel, J. Christen, S. Schwaiger, I. Argut, T. Wunderer, F. Lipski,
    R. Rösch and F. Scholz;
    Microscopic investigation of planar semipolar GaN directly grown on pre-patterned sapphire substrates by cathodoluminescence

    IWN, Tampa, USA 2010, poster.

  • S. Metzner, F. Bertram, T. Hempel, J. Christen, T. Wunderer, F. Lipski, S. Schwaiger and F. Scholz;
    Spatio-time resolved Cathodoluminescence Microscopy of Semipolar InGaN SQW on inverse GaN Pyramids: Correlation of Real Structure and Recombination Kinetics

    ICMOVPE-XV, Lake Tahoe, CA, USA 2010, talk.

  • A. Meyer, C. Wächter, M. Jetter and P. Michler;
    Towards green electroluminescence of semipolar InGaN-MQWs on GaN-pyramids

    DPG Spring Meeting, Regensburg 2010, talk.

  • S. Neugebauer, S. Metzner, F. Bertram, T. Hempel, J. Christen, S. Schwaiger,  J. Däubler and F. Scholz;
    Highly spatially and spectrally resolved cathodoluminescence of planar semipolar GaN grown on pre-patterned sapphire substrate

    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • M. Noltemeyer, M. Wieneke, T. Hempel, A. Dadgar, J. Bläsing, A. Krost and J. Christen;
    Cathodoluminescence on heteroepitaxial grown a-plane GaN-reduction of the BSF-luminescence

    DPG Spring Meeting, Regensburg 2010, talk.

  • S.Ploch, J. B. Park, J. Stellmach, M. Frentrup, T. Schwaner, T. Wernicke, T. Niermann, M. Pritovsek, M. Lehmann, and M. Kneissl;
    Growth of single phase semipolar (11-22) GaN on (10-10) sapphire
    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • J. Rass, T. Wernicke, W. John, S. Einfeldt, P. Vogt, M. Weyers and M. Kneissl;
    Anisotropy in semipolar InGaN laser diodes: Consequences for resonator design and facet formation

    DPG Spring Meeting, Regensburg 2010, talk.

  • J. Rass, T. Wernicke, L. Redaelli, J. Kupec, B. Witzigmann, M. Brendel, A. Hangleiter, S. Einfeldt, P. Vogt, M. Weyers and M. Kneissl;
    Gain anisotropy of laser diodes in nonpolar and semipolar GaN

    IWN, Tampa, USA 2010, talk.

  • R. Ravash, J. Bläsing, A. Dadgar and A. Krost;
    Wachstum von semipolar GaN auf hochindizierten Si(11h) Substraten
    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • L. Schade, U. Schwarz, T. Wernicke, M. Weyers and M. Kneissl;
    Polarization-dependent photoluminescence studies of semipolar and nonpolar InGaN quantum wells

    DPG Spring Meeting, Regensburg 2010, talk.

  • F. Scholz, F. Lipski, T. Wunderer and S. Schwaiger;
    Hydride Vapor Phase Epitaxy of thick polar and non-polar GaN layersIX Int. Conf. of Polish Society for Crystal Growth, Gdansk, Poland, 2010, invited talk.

  • S. Schwaiger, I. Argut, T. Wunderer, F. Lipski, R. Rösch and F. Scholz;
    Growth of planar semipolar GaN via epitaxial lateral overgrowth on prepatterned sapphire substrates

    DPG Spring Meeting, Regensburg 2010, talk.

  • S. Schwaiger, I. Argut, T. Wunderer, F. Lipski, R. Rösch, F. Scholz, S. Metzner, F. Bertram, J. Christen, K. Fujan, M. Feneberg and K. Thonke;
    Semipolar GaN on pre-patterned sapphire substrates: Growth and characterization

    PARC, Palo Alto, CA, USA 2010, vortrag.

  • S. Schwaiger, I. Argut, T. Wunderer, F. Lipski, R. Rösch, S. Metzner, J. Christen, F. Bertram and F. Scholz;
    Grown of Planar Semipolar {10-11} GaN on Pre-Patterned Sapphire Substrates

    ICMOVPE XV, Lake Tahoe, CA, USA 2010, talk.

  • S. Schwaiger, T. Wunderer, I. Argut, F. Lipski, R. Rösch and F. Scholz;
    Planar semipolar {11-22} and {10-11} GaN on pre-patterned sapphire substrates

    Seminar Neue Materialien - Halbleiter, Otto-von-Guericke Universität, Magdeburg 2010, seminar talk.

  • S. Schwaiger, S. Metzner, J. Thalmair, S. Neugebauer, T. Wunderer, J. Däubler, F. Bertram, J. Zweck, J. Christen and F. Scholz;
    Koaleszenz von (11-22) orientiertem GaN auf strukturierten r-orientierten Saphir-Substraten

    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • A. Schwiegel, H. Bremers, H. Jönen, U. Rossow and A. Hangleiter;
    Characterization of m-plane InGaN multiple quantum wells by x-ray diffraction

    DPG Spring Meeting, Regensburg 2010, poster.

  • J. Stellmach, M. Frentrup, F. Mehnke, G. Kusch, M. Pristovsek, and M. Kneissl;
    MOVPE growth of semipolar (11-22) AlGaN on (10-10) sapphire
    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • T. Wernicke;
    In-incorporation on semipolar surfaces for blue-green lasers

    E-MRS Fall Meeting, Warsaw, Poland 2010, invited talk.

  • T. Wernicke, S. Ploch, V. Hoffmann, J. Rass, C. Netzel, L. Schade, U. Schwarz, A. Knauer, M. Weyers and M. Kneissl;
    Surface morphology of homoepitaxial GaN grown on non and semipolar GaN substrates

    DPG Spring Meeting, Regensburg 2010, talk.

  • M. Wieneke, T. Hempel, M. Noltemeyer, H. Witte, A. Dadgar, J. Bläsing, J. Christen and A. Krost;
    Heteroepitaxial growth of basal plane stacking fault free a-plane GaN

    DPG Spring Meeting, Regensburg 2010, talk.

  • M. Wieneke, M. Noltemeyer, T. Hempel, H. Witte, A. Dadgar, J. Bläsing, J. Christen and A. Krost;
    Heteroepitaxially grown a-plane GaN without evidence of basal plane stacking faults in X-ray diffraction measurements and luminescence spectra

    ICMOVPE-XV, Lake Tahoe, CA, USA 2010, talk.

Conference Contributions 2010

  • F. Bertram, S. Metzner, J. Christen, M. Jetter, C. Wächter and P. Michler;
    Cathodoluminescence Microscopy of self-organized InGaN nano-structures on GaN Pyramids
    M&M, Portland, OR, USA 2010, talk.

  • F. Bertram, C. Karbaum, S. Metzner and J. Christen;
    Optical and structural properties of non-polar m-plane GaN on patterned Si substrates microscopic correlation of luminescence with ELO growth domains
    IWN, Tampa, USA 2010, talk.

  • F. Bertram, S. Metzner, J. Christen, M. Jetter, C. Wächter and P. Michler;
    Direct Microscopic Correlation of Real Structure and Recombination Kinetics in Semipolar Grown InGaN quantum well grown on of hexagonal GaN pyramids

    ICMOVPE XV, Lake Tahoe, CA, USA 2010, talk.

  • F. Bremers, A. Schwiegel, H. Jönen, U. Rossow, M. Brendel, A. D. Dräger, A. Hangleiter, S. Schwaiger and F. Scholz;
    Identical Indium incorporation in polar and nonpolar GaInN quantum wells: A high resolution X-ray diffraction study
    IWN, Tampa, USA 2010, talk.
  • J. Christen, S. Metzner, F. Bertram, T. Wunderer, F. Lipski, S. Schwaiger and F. Scholz;
    Spatio-time-resolved cathodoluminescence spectroscopy imaging microscopic correlation of real structure and recombination kinetics in InGaN quantum wells

    SPIE Photonics West, San Francisco, CA, USA 2010, invited talk.

  • J. Christen, F. Bertram, S. Metzner, T. Wunderer, F. Lipski, S. Schwaiger and F. Scholz;
    Microscopic energy relaxation in semipolar InGaN quantum wells via real space transfer-directly imaged by spatio-time-resolved cathodoluminescence spectroscopy

    IWN Tampa, USA 2010, talk.

  • J. Christen, F. Bertram, S. Metzner, T. Wunderer, F. Lipski, S. Schwaiger and F. Scholz;
    Spatio-time-resolved cathodoluminescence spectroscopy imaging: microscopic recombination kinetics in semi-polar InGaN quantum wells

    M&M, Portland, OR, USA 2010, invited talk.

  • J. Däubler, S. Schwaiger, I. Tischer, R. Leute, T. Wunderer, K. Thonke and F. Scholz;
    (10-11) GaN auf vorstrukturiertem Saphir: Wachstum, Charakterisierung und Lumineszenz von InGaN QWs
    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • A. Dempewolf, M. Müller, F. Bertram, T. Hempel, R. Ravash, A. Dadgar, A. Krost and J. Christen;
    Luminescence properties of GaN grown on Si{211} and Si{311} by MOVPE

    IWN, Tampa, USA 2010, talk.

  • M. Finke, H. Jönen, H. Bremers, U. Rossow and A. Hangleiter;
    Behaviour of the spontaneous polarisation field in polar and nonpolar GaInN/GaN quantum well structures

    DPG Spring Meeting, Regensburg 2010, talk.

  • M. Frentrup, S. Ploch, M. Pristovsek and M. Kneissl;
    Atomic model of the interface between m-plane sapphire and semi-polar GaN

    DPG Spring Meeting, Regensburg 2010, talk.

  • M. Frentrup, S. Ploch, M. Pristovsek and M. Kneissl;
    Crystallography of semipolar group-III nitrides on {10-10} m-plane sapphire substrates

    iNow Beijing/Changchun 2010, poster.

  • L. Groh, C. Hums, J. Bläsing, A. Dadgar and A. Krost;
    MOVPE-Wachstum und röntgenographische Charakterisierung von AlInGaN
    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • A. Hangleiter, H. Jönen, A. D. Dräger, T. Langer, H. Bremers and U. Rossow;
    Materials issues with GaN-based blue-green light emitters

    Materials for Energy, Karlsruhe 2010, talk.

  • L. Hoffmann, H. Bremers, H. Jönen, U. Rossow and A. Hangleiter;
    TEM Investigation of c- and m-plane GaInN/GaN quantum well structures with high Indium Content

    DPG Spring Meeting, Regensburg 2010, poster.

  • H. Jönen, U. Rossow, H. Bremers, L. Hoffmann, A. D. Dräger, M. Brendel, T. Langer, S. Metzner, F. Bertram, J. Christen, J. Thalmair, J. Zweck, L. Schade, U. T. Schwarz and A. Hangleiter;
    Highly efficient light emission from natural quantum wires formed by stacking faults intersecting nonpolar GaInN quantum wells

    ICPS, Seoul, Korea 2010, poster.

  • H. Jönen, H. Bremers, U. Rossow, A. Schwiegel, M. Brendel, A. D. Dräger, A. Hangleiter, S. Schwaiger and F. Scholz;
    Comparable indium incorporation in polar and nonpolar GaInN quantum wells for longwavelength lasers

    E-MRS Fall Meeting, Warsaw, Poland 2010, talk.

  • H. Jönen, U. Rossow, H. Bremers, T. Langer, D. Dräger, L. Hoffmann, S. Metzner, F. Bertram, J. Christen, L. Schade, U. T. Schwarz and A. Hangleiter;
    Influence of stacking faults on the optical properties of m-plane GaInN quantum wells

    DPG Spring Meeting, Regensburg 2010, talk.

  • H. Jönen, H. Bremers, U. Rossow, L. Hoffmann, H. Schwiegel, M. Brendel, A. D. Dräger, S. Schwaiger, F. Scholz, J. Thalmaier, J. Zweck and A. Hangleiter;
    Indium-Einbau in GaInN Quantenfilmen auf polaren und nicht-polaren Oberflächen
    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • C. Karbaum, F. Bertram, S. Metzner, J. Christen, T. Wunderer and F. Scholz;
    Spectrally resolved cathodoluminescence microscopy of an InGaN SQW on hexagonally inverted GaN pyramids

    DPG Spring Meeting, Regensburg 2010, talk.

  • C. Karbaum, F. Bertram, S. Metzner, J. Christen, X. Ni, N. Izyumskaya, V. Avrutin, Ü. Özgür and H. Morkoc;
    Spatially resolved cathodoluminescence spectroscopy of InGaN SQWs on m-plane GaN
    grown on patterned Si(112) substrate
    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • R. A. R. Leute, K. Forghani, F. Lipski, S. Schwaiger and F. Scholz;
    Dreidimensionale AlGaN-Strukturen als Wellenleiter Mantel für semipolare Laserstrukturen
    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • S. Metzner, F. Bertram, J. Christen, T. Wunderer, F. Lipski, S. Schwaiger and F. Scholz;
    Microscopic correlation of real structure and recombination kinetics in semipolar InGaN SQW using spatio-time-resolved cathodoluminescence

    DPG Spring Meeting Regensburg 2010, talk.

  • S. Metzner, F. Bertram, J. Christen, M. Jetter, C. Wächter and P. Michler;
    Cathodoluminescence microscopy of self-organized InGaN nanostructures in GaN pyramids

    SPIE Photonics West, San Francisco, CA, USA 2010, talk.

  • S. Metzner, S. Neugebauer, F. Bertram, T. Hempel, J. Christen, S. Schwaiger, I. Argut, T. Wunderer, F. Lipski,
    R. Rösch and F. Scholz;
    Microscopic investigation of planar semipolar GaN directly grown on pre-patterned sapphire substrates by cathodoluminescence

    IWN, Tampa, USA 2010, poster.

  • S. Metzner, F. Bertram, T. Hempel, J. Christen, T. Wunderer, F. Lipski, S. Schwaiger and F. Scholz;
    Spatio-time resolved Cathodoluminescence Microscopy of Semipolar InGaN SQW on inverse GaN Pyramids: Correlation of Real Structure and Recombination Kinetics

    ICMOVPE-XV, Lake Tahoe, CA, USA 2010, talk.

  • A. Meyer, C. Wächter, M. Jetter and P. Michler;
    Towards green electroluminescence of semipolar InGaN-MQWs on GaN-pyramids

    DPG Spring Meeting, Regensburg 2010, talk.

  • S. Neugebauer, S. Metzner, F. Bertram, T. Hempel, J. Christen, S. Schwaiger,  J. Däubler and F. Scholz;
    Highly spatially and spectrally resolved cathodoluminescence of planar semipolar GaN grown on pre-patterned sapphire substrate

    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • M. Noltemeyer, M. Wieneke, T. Hempel, A. Dadgar, J. Bläsing, A. Krost and J. Christen;
    Cathodoluminescence on heteroepitaxial grown a-plane GaN-reduction of the BSF-luminescence

    DPG Spring Meeting, Regensburg 2010, talk.

  • S.Ploch, J. B. Park, J. Stellmach, M. Frentrup, T. Schwaner, T. Wernicke, T. Niermann, M. Pritovsek, M. Lehmann, and M. Kneissl;
    Growth of single phase semipolar (11-22) GaN on (10-10) sapphire
    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • J. Rass, T. Wernicke, W. John, S. Einfeldt, P. Vogt, M. Weyers and M. Kneissl;
    Anisotropy in semipolar InGaN laser diodes: Consequences for resonator design and facet formation

    DPG Spring Meeting, Regensburg 2010, talk.

  • J. Rass, T. Wernicke, L. Redaelli, J. Kupec, B. Witzigmann, M. Brendel, A. Hangleiter, S. Einfeldt, P. Vogt, M. Weyers and M. Kneissl;
    Gain anisotropy of laser diodes in nonpolar and semipolar GaN

    IWN, Tampa, USA 2010, talk.

  • R. Ravash, J. Bläsing, A. Dadgar and A. Krost;
    Wachstum von semipolar GaN auf hochindizierten Si(11h) Substraten
    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • L. Schade, U. Schwarz, T. Wernicke, M. Weyers and M. Kneissl;
    Polarization-dependent photoluminescence studies of semipolar and nonpolar InGaN quantum wells

    DPG Spring Meeting, Regensburg 2010, talk.

  • F. Scholz, F. Lipski, T. Wunderer and S. Schwaiger;
    Hydride Vapor Phase Epitaxy of thick polar and non-polar GaN layersIX Int. Conf. of Polish Society for Crystal Growth, Gdansk, Poland, 2010, invited talk.

  • S. Schwaiger, I. Argut, T. Wunderer, F. Lipski, R. Rösch and F. Scholz;
    Growth of planar semipolar GaN via epitaxial lateral overgrowth on prepatterned sapphire substrates

    DPG Spring Meeting, Regensburg 2010, talk.

  • S. Schwaiger, I. Argut, T. Wunderer, F. Lipski, R. Rösch, F. Scholz, S. Metzner, F. Bertram, J. Christen, K. Fujan, M. Feneberg and K. Thonke;
    Semipolar GaN on pre-patterned sapphire substrates: Growth and characterization

    PARC, Palo Alto, CA, USA 2010, vortrag.

  • S. Schwaiger, I. Argut, T. Wunderer, F. Lipski, R. Rösch, S. Metzner, J. Christen, F. Bertram and F. Scholz;
    Grown of Planar Semipolar {10-11} GaN on Pre-Patterned Sapphire Substrates

    ICMOVPE XV, Lake Tahoe, CA, USA 2010, talk.

  • S. Schwaiger, T. Wunderer, I. Argut, F. Lipski, R. Rösch and F. Scholz;
    Planar semipolar {11-22} and {10-11} GaN on pre-patterned sapphire substrates

    Seminar Neue Materialien - Halbleiter, Otto-von-Guericke Universität, Magdeburg 2010, seminar talk.

  • S. Schwaiger, S. Metzner, J. Thalmair, S. Neugebauer, T. Wunderer, J. Däubler, F. Bertram, J. Zweck, J. Christen and F. Scholz;
    Koaleszenz von (11-22) orientiertem GaN auf strukturierten r-orientierten Saphir-Substraten

    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • A. Schwiegel, H. Bremers, H. Jönen, U. Rossow and A. Hangleiter;
    Characterization of m-plane InGaN multiple quantum wells by x-ray diffraction

    DPG Spring Meeting, Regensburg 2010, poster.

  • J. Stellmach, M. Frentrup, F. Mehnke, G. Kusch, M. Pristovsek, and M. Kneissl;
    MOVPE growth of semipolar (11-22) AlGaN on (10-10) sapphire
    25. DGKK Workshop Epitaxie von III/V-Halbleitern, Aachen 2010, talk.

  • T. Wernicke;
    In-incorporation on semipolar surfaces for blue-green lasers

    E-MRS Fall Meeting, Warsaw, Poland 2010, invited talk.

  • T. Wernicke, S. Ploch, V. Hoffmann, J. Rass, C. Netzel, L. Schade, U. Schwarz, A. Knauer, M. Weyers and M. Kneissl;
    Surface morphology of homoepitaxial GaN grown on non and semipolar GaN substrates

    DPG Spring Meeting, Regensburg 2010, talk.

  • M. Wieneke, T. Hempel, M. Noltemeyer, H. Witte, A. Dadgar, J. Bläsing, J. Christen and A. Krost;
    Heteroepitaxial growth of basal plane stacking fault free a-plane GaN

    DPG Spring Meeting, Regensburg 2010, talk.

  • M. Wieneke, M. Noltemeyer, T. Hempel, H. Witte, A. Dadgar, J. Bläsing, J. Christen and A. Krost;
    Heteroepitaxially grown a-plane GaN without evidence of basal plane stacking faults in X-ray diffraction measurements and luminescence spectra

    ICMOVPE-XV, Lake Tahoe, CA, USA 2010, talk.