Conference Contributions 2013

    • F. Bertram, G. Schmidt, P. Veit, M. Wieneke, A. Dadgar, A. Krost, and J. Christen;
      Emisssion of stair rod dislocations in a-plane GaN identified by scanning transmission electron microscopy cathodoluminescence
      ICNS 2013, Washington, DC, USA, 2013, talk.

    • E.R. Buß, U. Rossow, H. Bremers, T. Meisch, F. Scholz, and A. Hangleiter;
      Al_{1-x} In_xN on non- and semipolar GaN
      ICNS 2013, Washington, DC, USA, 2013, talk.

    • T. Meisch, S. Schörner, J. Wang, and F. Scholz;
      InGaN Quantum Wells grown on 2´´ GaN - A comparison between (0001), (10-11) and (11-22) GaN
      ICNS 2013, Washington, DC, USA, 2013, talk.

    • T. Meisch and F. Scholz;
      (20-21) GaN grown on 2´´ patterned sapphire substrates
      ICNS 2013, Washington, DC, USA, 2013, poster.

    • G. Schmidt, P. Veit, O. August, M. Müller, S. Petzold, F. Bertram, S. Metzner, M. Wieneke, A. Dadgar, A. Krost, and J. Christen;
      Structural and optical properties of defects in silicon doped a-plane GaN
      E-MRS 2013 Spring Meeting, Strasbourg, France, 2009, poster.

    • G. Schmidt, P. Veit, F. Bertram, S. Metzner, S. Petzold, M. Wieneke, A. Dadgar, A. Krost, and J. Christen;
      Structural and optical properties of defects in silicon doped a-plane GaN
      DPG Spring Meeting, Regensburg, Germany, 2013, talk.

    • F. Scholz;
      GaN-based optoelectronikc structures on large area substrates
      Int. Conf. on Lasers, Optics & Photonics, San Antonio, Texas, USA, 2013, Invited talk.

    • F. Scholz, T. Meisch, M. Caliebe, S. Schörner, K. Thonke, W. van Mierlo, U. Kaiser, S. Bauer, S. Lazarev, and T. Baumbach;
      Semipolar GaInN-GaN hetero structures on large area substrates
      ICCGE 2013, Warschau, Polen, 2013, talk.

    • F. Scholz;
      Semipolar Nitride Structures: More efficient LEDs?
      IFW, Dresden, Germany, 2013, talk.

    • F. Scholz, D. Heinz, R. Leute, T. Meisch, J. Wang;
      Semipolar GaN-based optoelectronic structures on large area substrates
      SPIE Photonics West, San Francisco, CA, USA, 2013, talk.

    • M. Wieneke, P. Veit, J. Bläsing, A. Dadgar, and A. Krost;
      Anisotrope Spannungsrelaxation in a-planarem GaN mittels LT AIN
      28. DGKK Workshop Epitaxie von III/V-Halbleitern, Ilmenau, Germany, 2013, talk.

    • M. Wieneke, H. Witte, T. Hempel, P. Veit, J. Bläsing, A. Dadgar, J. Christen, and A. Krost;
      Morphological and microstructural properties of highly Si and Ge doped a-plane GaN
      ICNS 2013, Washington, DC, USA, 2013, poster.

    • M. Wieneke, H. Witte, S. Fritze, A. Dadgar, J. Bläsing, and A. Krost;
      Comparative study on Si and Ge doping in a- and c-plane GaN
      DPG Spring Meeting, Regensburg, Germany, 2013, talk.

    • M. Frentrup, S. Ploch, T. Wernicke, and M. Kneissl;
      Determination of In mole fraction and strain state in semi- and nonpolar InGaN layers by XRD
      DPG Spring Meeting, Regensburg, Germany, 2013, talk

    • M. Frentrup, T. Wernicke, J. Rass, N. Hatui, J. Parmar, J. Stellmach, A. Bhattacharya and M. Kneissl;
      Structural and optical characterisation of MOVPE grown semi-polar (11-22) AlGaN on m-sapphire over the entire composition range
      EWMOVPE 2013, Aachen, Germany, 2013, poster

    • N. Hatui, A. Kadir, M. Frentrup, A. Rahman, M. Kneissl, and A. Bhattacharya;
      MOVPE growth of semi-polar (11-22) oriented AlInN on m-plane sapphire over the whole composition range
      EWMOVPE 2013, Aachen, Germany, 2013, poster

    • N. Hatui, A. Kadir, M. Frentrup, S. Subramanian, A. Rahman, M. Kneissl, and A. Bhattacharya;
      MOVPE growth and characterization of semi-polar (11-22)-oriented AlInN on m-plane sapphire over the whole composition range
      ICNS 2013, Washington, DC, USA, 2013, poster

    • C. Netzel, J. Stellmach, M. Feneberg, M. Frentrup, F. Mehnke, T. Wernicke, M. Winkler, M. Kneissl, and M. Weyers;
      Polarization properties of photoluminescence from semipolar (11-22) AlGaN layers
      ICNS 2013, Washington, DC, USA, 2013, talk

    • L. Schade, T. Wernicke, J. Rass, S. Ploch, M. Karunakaran, K. Holc, M. Weyers, M. Kneissl, U. T. Schwarz;
      Defects in polar, semipolar and nonpolar (In)GaN - a comparison
      ICNS 2013, Washington, DC, USA, 2013, talk

    • A. Mogilatenko, J. Stellmach, M. Frentrup, F. Mehnke, T. Wernicke, M. Kneissl, and M. Weyers;
      Analysis of crystal orientation in AlN layers grown on m-plane sapphire
      MC 2013, Regensburg, Germany, 2013, poster