• M. Knab, M. Hocker, T. Felser, I. Tischer, J. Wang, F. Scholz and K. Thonke;
  EBIC investigations on polar and semipolar InGaN LED structures
  Phys. Status Solidi B, 253, 126-132 (2016) (link)
  
  
• T. Langer, M. Klisch, F. A. Ketzer, H. Jönen, H. Bremers, U. Rossow, T. Meisch, F. Scholz and A. Hangleiter;
  Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells
  Phys. Status Solidi B 253, 133-139 (2016), (link)
  
  
• R.A.R. Leute,  J.Wang,  D. Heinz, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kneissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke and F. Scholz;
  Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells
  Phys. Status Solidi B 253, 180-185 (2016) (link)
  
  
• T. Meisch, R. Zeller, S. Schörner, K. Thonke, L. Kirste, T. Fuchs and F. Scholz;
  Doping behavior of (1122)-GaN grown on patterned sapphire substrates
  Phy.Status Solidi B 253, 164-168 (2016)   (link)
  
  
• R. Buss, P. Horenburg, U. Rossow, H. Bremers, T. Meisch, M. Caliebe, F. Scholz and A. Hangleiter;
  Non- and semi-polar AlInN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices
  Phys. Status Solidi B 253, 84-92 (2016) (link)
  
  
• M. Lohr, R. Schregle, M. Jetter, C. Waechter, K. Muller, T. Mehrtens, A. Rosenauer, I. Pietzonka, M. Strassburg and J. Zweck;
  Quantitative measurements of internal electric elds with differential phase contrast microscopy on InGaN/GaN quantum well structures
  Phys. Status Solidi B 253, 140-144 (2016) (link)
  
  
• S. Metzner, F. Bertram, T. Hempel, T. Meisch, S. Schwaiger, F. Scholz and J. Christen;
  Direct microscopic correlation of real structure and optical properties of semipolar GaN based on pre-patterned r-plane sapphire
  Phys. Status Solidi B 253, 54-60 (2016) (link)
  
  
• M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, R. A. R. Leute, D. Heinz, J. Wang, T. Meisch, F. Scholz and J. Christen;
  Nano-scale cathodoluminenscene imaging of III-nitride based submicrometer LED structures with semipolar quantum wells 13 directly in a scanning transmission elctron microscope
  Phys. Status Solidi B 253, 112-117 (2016) (link)
  
  
• S. Neugebauer, S. Metzner, J. Blasing, F. Bertram, A. Dadgar, J. Christen and A. Strittmatter;
  Polarization engineering of c-plane InGaN quantum wells by pulse-fow growth of AlInGaN barriers
  Phys. Status Solidi B 253, 118-125 (2016) (link)
  
  
• M. Rychetsky, I. Koslow, T. Wernicke, V. Hoffmann, M. Weyers and M. Kneissl;
  Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg
  Phys. Status Solidi B 253, 169-173 (2016) (link)
  
  
• L. Schade, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl and U. T. Schwarz;
  On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells
  Phys. Status Solidi B 253, 147-157 (2016) (link)
  
  
• G. Schmidt, P. Veit, M. Wieneke, F. Bertram, A. Dadgar, A. Krost and J. Christen;
  Nanoscale cathodoluminescence of stacking faults and partial dislocations in a-plane GaN
  Phys. Status Solidi B 253, 73-77 (2016) (link)