High In-containing GaInN active region: Growth on semi-polar microstructures and time-resolved optical charcterization

In spite of the tremendous success of nitride semiconductors in optoelectronics for the UV and blue spectral range, they still suffer from strong piezoelectric fields at the heterointerfaces and problems with high indium incorporation in GaInN layers, which limits the extension of these devices to the green or red spectral range up to now. With this project within the research group “Polarization field control in light emitters” we like to target this green, respectively red spectral region, by depositing In-rich GaInN quantum wells on GaN micro-pyramids fabricated by selective epitaxy. The sidewalls of these pyramids consist of semi-polar (1-101) or (11-22) surfaces so that the electric field at the corresponding GaN/GaInN interfaces will be strongly reduced. In addition, an enhanced In incorporation on these semi-polar surfaces is expected, so that a larger amount of indium can be embedded as compared to polar surfaces. With time-resolved, spatially dependent photoluminescence spectroscopy we will monitor on one hand the local electric fields on the different semi- and non-polar nanostructures of the research group and simultaneously determine the carrier dynamics in the active GaInN regions. By combining the growth experiments and the optical spectroscopy with the other activities of the research group members we contribute strongly to the development of the active region for laser devices in the green spectral range and realize electrically injected light emitting devices on semi-polar, respectively non-polar nitride substrates for the green to red spectral range.


Project Leader

Kontakt

  • Michael Jetter
  • Institut für Halbleiteroptik
    und Funktionelle Grenzflächen
  • Universität Suttgart
  • 70569 Stuttgart
  • Tel.: +49 (0)711/6856-5105
  • Fax: +49 (0)711/6856-3866

Kontakt

  • Peter Michler
  • Institut für Halbleiteroptik
    und Funktionelle Grenzflächen
  • Universität Suttgart
  • 70569 Stuttgart
  • Tel.: +49 (0)711/6856-4660
  • Fax: +49 (0)711/6856-3866

Project Leader

High In-containing GaInN active region: Growth on semi-polar microstructures and time-resolved optical charcterization

In spite of the tremendous success of nitride semiconductors in optoelectronics for the UV and blue spectral range, they still suffer from strong piezoelectric fields at the heterointerfaces and problems with high indium incorporation in GaInN layers, which limits the extension of these devices to the green or red spectral range up to now. With this project within the research group “Polarization field control in light emitters” we like to target this green, respectively red spectral region, by depositing In-rich GaInN quantum wells on GaN micro-pyramids fabricated by selective epitaxy. The sidewalls of these pyramids consist of semi-polar (1-101) or (11-22) surfaces so that the electric field at the corresponding GaN/GaInN interfaces will be strongly reduced. In addition, an enhanced In incorporation on these semi-polar surfaces is expected, so that a larger amount of indium can be embedded as compared to polar surfaces. With time-resolved, spatially dependent photoluminescence spectroscopy we will monitor on one hand the local electric fields on the different semi- and non-polar nanostructures of the research group and simultaneously determine the carrier dynamics in the active GaInN regions. By combining the growth experiments and the optical spectroscopy with the other activities of the research group members we contribute strongly to the development of the active region for laser devices in the green spectral range and realize electrically injected light emitting devices on semi-polar, respectively non-polar nitride substrates for the green to red spectral range.

Kontakt

  • Michael Jetter
  • Institut für Halbleiteroptik
    und Funktionelle Grenzflächen
  • Universität Suttgart
  • 70569 Stuttgart
  • Tel.: +49 (0)711/6856-5105
  • Fax: +49 (0)711/6856-3866

Kontakt

  • Peter Michler
  • Institut für Halbleiteroptik
    und Funktionelle Grenzflächen
  • Universität Suttgart
  • 70569 Stuttgart
  • Tel.: +49 (0)711/6856-4660
  • Fax: +49 (0)711/6856-3866