MOVPE growth of polarization reduced AlGaInN quantum wells and structural characterisation

To increase the efficiency of green, low-cost LEDs on Si substrates we are focusing on the growth of polarization reduced GaN on high index Si-substrates. Silicon substrates are of huge interest for a reduction in LED and also HV-FET manufacturing cost. While c-axis oriented GaN on silicon has been proven as competitive alternative to sapphire and SiC for GaN based high-power LEDs, it is also a very attractive substrate for polarization reduced growth if a simple route for its realization can be achieved. With the proposed approach we expect to reduce polarization fields of MQWs in growth direction at least by 50 % with material low in stacking faults. The focus of the proposal will be the optimization in material quality and the investigation of different substrate orientations to achieve this, as well as a comparison between experiment and theoretical prediction for differently tilted GaN based MQWs. 


Project Leader

Kontakt

  • Armin Dadgar
  • Institut für Experimentelle Physik
  • Otto-von-Guericke-Universität Magdeburg
  • Postfach 4120
  • 39016 Magdeburg
  • Tel.: +49 (0)391/67-11384
  • Fax: +49 (0)391/67-11130

Kontakt

  • Alois Krost
  • Institut für Experimentelle Physik
  • Otto-von-Guericke-Universität Magdeburg
  • Postfach 4120
  • 39016 Magdeburg
  • Tel.: +49 (0)391/67-18347
  • Fax: +49 (0)391/67-11130