Polarization field control in GaInN quantum well heterostructures on semipolar growth surfaces

The main objective of Project P5 is to investigate the epitaxial growth process of GaN-based materials on semi-polar GaN-surfaces for the use in light emitting diodes and laser heterostructures. One of the main problems that limits the performance of such optoelectronic devices are the strong polarization effects that occur at the hetero-interfaces (e.g. InGaN-GaN, AlGaN-GaN). This polarization and the related Stark-effect reduce the overlap of electron and hole wave functions and thus lower the probability of light emission. However, the polarization depends on the interface orientation and is strongest perpendicular to the (0001) plane. Therefore the growth on semipolar surfaces inclined to the (0001) plane will allow a significant reduction or even complete elimination of the polarization fields. The epitaxial growth of (1103) and (1122) semipolar GaN films on m-plane sapphire and the optimization of the crystalline film quality will be in the focus of the first part of the project. In addition, growth of InAlGaN heterostructures on semipolar quasi-bulk GaN substrates and template structures from consortium partners will be explored. The second part of the project focuses on the development of fabrication processes for non- and semipolar LED and laser devices. This includes in particular the investigation of ohmic contacts and the cleaving and dry-etching of laser mirrors. Finally, together with our partners we will fabricate and characterize LEDs, optically pumped laser heterostructures and current-injection laser diodes.


Project Leader

Kontakt

  • Michael Kneissl
  • Institut für Festkörperphysik
  • Technische Universität Berlin
  • Hardenbergstraße 36, EW 6-1
  • 10623 Berlin
  • Tel.: +49 (0)30/314-22563
  • Fax: +49 (0)30/314-21769

Kontakt

  • Tim Wernicke
  • Institut für Festkörperphysik
  • Technische Universität Berlin
  • Hardenbergstraße 36, EW 6-1
  • 10623 Berlin
  • Tel.: +49 (0)30/314-79705
  • Fax: +49 (0)30/314-21769

Project Leader

Polarization field control in GaInN quantum well heterostructures on semipolar growth surfaces

The main objective of Project P5 is to investigate the epitaxial growth process of GaN-based materials on semi-polar GaN-surfaces for the use in light emitting diodes and laser heterostructures. One of the main problems that limits the performance of such optoelectronic devices are the strong polarization effects that occur at the hetero-interfaces (e.g. InGaN-GaN, AlGaN-GaN). This polarization and the related Stark-effect reduce the overlap of electron and hole wave functions and thus lower the probability of light emission. However, the polarization depends on the interface orientation and is strongest perpendicular to the (0001) plane. Therefore the growth on semipolar surfaces inclined to the (0001) plane will allow a significant reduction or even complete elimination of the polarization fields. The epitaxial growth of (1103) and (1122) semipolar GaN films on m-plane sapphire and the optimization of the crystalline film quality will be in the focus of the first part of the project. In addition, growth of InAlGaN heterostructures on semipolar quasi-bulk GaN substrates and template structures from consortium partners will be explored. The second part of the project focuses on the development of fabrication processes for non- and semipolar LED and laser devices. This includes in particular the investigation of ohmic contacts and the cleaving and dry-etching of laser mirrors. Finally, together with our partners we will fabricate and characterize LEDs, optically pumped laser heterostructures and current-injection laser diodes.

Kontakt

  • Michael Kneissl
  • Institut für Festkörperphysik
  • Technische Universität Berlin
  • Hardenbergstraße 36, EW 6-1
  • 10623 Berlin
  • Tel.: +49 (0)30/314-22563
  • Fax: +49 (0)30/314-21769

Kontakt

  • Tim Wernicke
  • Institut für Festkörperphysik
  • Technische Universität Berlin
  • Hardenbergstraße 36, EW 6-1
  • 10623 Berlin
  • Tel.: +49 (0)30/314-79705
  • Fax: +49 (0)30/314-21769