Advanced Electro-Optical Modelling of III-Nitride Light Emitters

As part of the research group POLARCON, we intend to study the active region carrier dynamics in III-nitride light emitting devices using quantum-mechanical non-equilibrium models, such as an empirical scattering theory or the non-equilibrium Green's function method (NEGF). This method is applied to the analysis of active regions for III-nitride light emitters with different crystal orientations for the first time. It will overcome the limits of present simulation methods, such as lack of tunneling currents and thermally activated currents from non-equilibrium carrier distributions in the presence of radiative and non-radiative recombination. Using this model, we plan to improve the understanding of lasers and light emitting diodes (LEDs) for polar, semi-polar and non-polar configurations, in particular electro-optical efficiencies and threshold current densities. In collaboration with the partners of the research group, the results will be compared to experimental data in order clarify the fundamental carrier transport related effects in a III-nitride active region for optoelectronics. In the consortium, strategies will be developed in order to design active regions with highest performance. In addition, device design aspects of all partner projects will be supported with our state of the art modeling tools.


Project Leader

Kontakt

  • Bernd Witzigmann
  • Computational Electronics and Photonics Group
  • University of Kassel
  • 34121 Kassel
  • Tel.: +49 (0)561/804-6543
  • Fax: +49 (0)561/804-6525

Project Leader

Advanced Electro-Optical Modelling of III-Nitride Light Emitters

As part of the research group POLARCON, we intend to study the active region carrier dynamics in III-nitride light emitting devices using quantum-mechanical non-equilibrium models, such as an empirical scattering theory or the non-equilibrium Green's function method (NEGF). This method is applied to the analysis of active regions for III-nitride light emitters with different crystal orientations for the first time. It will overcome the limits of present simulation methods, such as lack of tunneling currents and thermally activated currents from non-equilibrium carrier distributions in the presence of radiative and non-radiative recombination. Using this model, we plan to improve the understanding of lasers and light emitting diodes (LEDs) for polar, semi-polar and non-polar configurations, in particular electro-optical efficiencies and threshold current densities. In collaboration with the partners of the research group, the results will be compared to experimental data in order clarify the fundamental carrier transport related effects in a III-nitride active region for optoelectronics. In the consortium, strategies will be developed in order to design active regions with highest performance. In addition, device design aspects of all partner projects will be supported with our state of the art modeling tools.

Kontakt

  • Bernd Witzigmann
  • Computational Electronics and Photonics Group
  • University of Kassel
  • 34121 Kassel
  • Tel.: +49 (0)561/804-6543
  • Fax: +49 (0)561/804-6525