Publikationen 2002

  • U. Haboeck, A. Kaschner, A. Hoffmann, C. Thomson, T. Riemann, A. Krost, M. Seyboth, F. Habel;
    Correlation of Surface Potential, Free Carrier Concentration and Light Emission in ELO GaN Growth Domains
    phys. stat. sol. (b) 234(3) pp. 911-914 (2002)

  • D. Mistele, T. Rotter, K.S. Röver, S. Paprotta, M. Seyboth, V. Schwegler, F. Fedler, H. Klausing, O.K. Semchinova, J. Stemmer, J. Aderhold, J. Graul;
    First AlGaN/GaN MOSFET with Photoanodic Gate Dielectric
    Mat. Sci. Eng. B 93, 107-111 (2002)
  • D. Mistele, T. Rotter, Z. Bougrioua, I. Moermann, K.S. Röver, M. Seyboth, V. Schwegler, J. Stemmer, F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul;
    AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatment
    Mat. Res. Soc. Proc. 693, I6.51.1-I6.51.6 (2002) (link)
  • T. Rotter, D. Mistele, F. Fedler, H. Klausing, O.K. Semchinova, J. Stemmer, J. Aderhold, J. Graul, K.S. Röver, S. Paprotta, M. Seyboth, V. Schwegler;
    Temperature Stable MOSFET Based on AlGaN/GaN Heterostructures with Photoanodically Grown Gate Oxide
    accepted for publication in HITEN (High Temperature Electronics Network) Proc. (2002)
  • M. Seyboth, S.-S. Schad, M. Scherer, F. Habel, C. Eichler, M. Kamp, V. Schwegler;
    Substrates for Wide Bandgap Nitrides
    J. Mater. Sci: Mater. in Electr. 13 (11), pp. 659-664 (2002)  (link)
  • M. Scherer, B. Neubert, S.S. Schad, W. Schmid, C. Karnutsch, W. Wegleiter, A. Ploessl, K. P. Streubel;
    Efficient InAlGaP light-emitting diodes using radial outcoupling taper;
    SPIE-Int. Soc. Opt. Eng. Proceedings of Spie - the International Society for Optical Engineering, vol.4641, 2002, pp. 31-41; USA
  • W. Schmid, M. Scherer, C. Karnutsch, A. Plossl, W. Wegleiter, S. S. Schad, B. Neubert, K. Streubel;
    High-efficiency red and infrared light-emitting diodes using radial outcoupling taper
    IEEE Journal of Selected Topics in Quantum Electronics 8 (2002) pp. 256-63  (link)