Publikationen 2006

  • P. Brückner, M. Feneberg, K. Thonke, F. Habel, F. Scholz;
    High quality GaN layers grown on slightly miscut sapphire wafers
    Proc. MRS Fall Meeting Boston Dec. 2005; Mat. Res. Symp. Proc. Vol. 892 (2006), 0892-FF21-04.1

  • P. Brückner, F. Habel, F. Scholz;
    HVPE growth of high quality GaN layers

    Proc. ICNS Sept. 2005; phys. stat. sol. (c) 3 (6) pp. 1471-1474 (2006) (link)

  • M. Feneberg, M. Schirra, B. Neubert, P. Brückner, F. Scholz, R. Sauer, K. Thonke;
    Spatially resolved cathodoluminescence, photoluminescence, electroluminescence, and reflectance study of GaInN quantum wells on non-(0001) GaN facets
    Proc. ICNS Sept. 2005; phys. stat. sol. (b) 243 (7) (2006),pp. 1619-1624
  • M. Feneberg, F. Lipski, R. Sauer, K. Thonke, T. Wunderer, B. Neubert, P. Brückner, F. Scholz;
    Piezoelectric fields in GaInN/GaN quantum wells on different crystal facets
    Appl. Phys. Lett. 89 (2006) 242112 (link)

  • E. Müller, D. Gerthsen, P. Brückner, F. Scholz, Th. Gruber, A. Waag;
    Probing the electrostatic potential of charged dislocations in n-GaN and n-ZnO epilayers by transmission electron holography
    Phys. Rev. B 73(2006) 245316 (link)

  • B. Neubert, F. Habel, P. Brückner, F. Scholz, M.
    Schirra, M. Feneberg, K. Thonke, T. Riemann, J. Christen, M. Beer, J. Zweck, G. Moutchnik, M. Jetter;
    Investigations on local Ga and In incorporation of GaInN quantum wells on facets of selectively grown GaN stripes

    Proc. ICNS Sept. 2005; phys. stat. sol. (c) 3 (6) pp. 1587-1590 (2006) (link)

  • G.M. Prinz, A. Ladenburger, M. Feneberg, M. Schirra, S.B. Thapa, M. Bickermann, B.M. Epelbaum, F. Scholz, K. Thonke, and R. Sauer;
    Photoluminescence, cathodoluminescence, and reflectance study of AlN layers and AlN single crystals 
    Superlattices and Microstructures 40 (2006) pp. 513-518 (link)
  • A. A. Sirenko, A. Kazimirov, S. Cornaby, D.H. Bilderback, B. Neubert, P. Brückner, F. Scholz, V. Shneidman, A. Ougazzaden;
    Microbeam high angular resolution x-ray diffraction in InGaN/GaN selective-area-grown ridge structures
    Appl. Phys. Lett. 89 (2006) 181926 (link)

  • T. Wunderer, P. Brückner, B. Neubert, F. Scholz, M. Feneberg, F. Lipski, M. Schirra, and K. Thonke;
    Bright semipolar GaInN/GaN blue light emitting diode on side facets of selectively grown GaN stripes
    Appl. Phys. Lett. 89 (2006) 041121 (link)