Publikationen 2009

  • R. A. R. Leute, M. Feneberg, R. Sauer, K. Thonke, S. B. Thapa, F. Scholz, Y. Taniyasu, and M. Kasu;
    Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering
    Appl. Phys. Lett. 95 (2009) pp. 031903-1-3 (link)

  • F. Lipski, S. B. Thapa, J. Hertkorn, T. Wunderer, S. Schwaiger, F. Scholz, M. Feneberg, M. Wiedenmann, K. Thonke, H. Hochmuth, M. Lorenz, M. Grundmann;
    Studies towards freestanding GaN in hydride vapor phase epitaxy by in-situ etching of a sacrificial ZnO buffer layer
    phys. stat. sol. (c) 6 (2009) pp. 352–355. (link)

  • F. Scholz, T. Wunderer, B. Neubert, M. Feneberg, K. Thonke;
    GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets
    MRS Bull. 34 (2009) pp. 328-333. (link)

  • F. Scholz, S.B. Thapa, M. Fikry, J. Hertkorn, T. Wunderer, F. Lipski, A. Reiser, Y. Xie, M. Feneberg, K. Thonke, R. Sauer, M. Dürrschnabel, L.D. Yao, and D. Gerthsen;
    Epitaxial, growth of coaxial GaInN-GaN hetero-nanotubes
    IOP Conf. Ser.: Mater. Sci. Eng. 6 (2009) pp. 012002. (link)

  • T. Wunderer, F. Lipski, J. Hertkorn, S. Schwaiger, and F. Scholz;
    Fabrication of 3D InGaN/GaN structures providing semipolar GaN planes for efficient green light emission
    phys. stat. sol. (c) 6 (2009) pp. 490-493. (link)

  • T. Wunderer, F. Lipski, S. Schwaiger, J. Hertkorn, M. Wiedenmann, M. Feneberg, K. Thonke, and F. Scholz;
    Properties of Blue and Green InGaN/GaN Quantum Well Emission on Structured Semipolar Surfaces
    Jpn. J. Appl. Phys. 48 (2009) pp. 060201. (link)

  • J. Bläsing, A. Krost, J. Hertkorn, F. Scholz, L. Kirste, A. Chuvilin, U. Kaiser;
    Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study
    J. Appl. Phys. 105 (2009) pp. 033504-1-9. (link)

  • J. Hertkorn, S. B. Thapa, T. Wunderer, F. Scholz, Z. H. Wu, Q. Y. Wei, F. A. Ponce, M. A. Moram, C. J. Humphreys, C. Vierheilig, and U. T. Schwarz;
    Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy
    J. Appl. Phys. 106 (2009)
    pp. 013720-1-2. (link)

  • R. Jabbarov, N. Musayeva, F. Scholz, T. Wunderer, A.N. Turkin, S.S. Shirokov, A.E. Yunovich;
    Preparation and optical properties of Eu2+ doped CaGa2S4-CaS composite bicolor phosphor for white LED
    phys. stat. sol. (a) 206 (2009) pp. 287-292. (link)

  • T. Malinauskas, K. Jarasiunas, M. Heuken, F. Scholz, P. Brückner;
    Diffusion and recombination of degenerate carrier plasma in GaN
    phys. stat. sol. (c) 6 (2009) pp. 743-746.(link)

  • Qiyuan Wei, Zhihao Wu, Kewei Sun, Fernando A. Ponce, Joachim Hertkorn, and Ferdinand Scholz;
    Evidence of Two-Dimensional Hole Gas in p-Type AlGaN/AlN/GaN Heterostructures
    Appl. Phys. Express 2 (2009) pp. 121001. (link)