Publikationen 2010

  • F. Lipski, T. Wunderer, S. Schwaiger, and F. Scholz
    Fabrication of freestanding 2-GaN wafers by hydride vapour phase epitaxy and self-separation during cooldown
    Phys. Status Solidi (a) 207 (2010) pp. 1287–1291. (link)

  • F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen;
    GaInN-based LED structures on selectively grown semi-polar crystal facets
    Phys. Status Solidi (a) 207 (2010) pp. 1407-1413. (link)

  • S. Schwaiger, I. Argut, T. Wunderer, R. Rösch, F. Lipski, J. Biskupek, U. Kaiser, and F. Scholz;
    Planar semipolar (10-11) GaN on (11-23) sapphire
    Appl. Phys. Lett. 96 (2010) pp. 231905. (link)

  • S. Schwaiger, F. Lipski, T. Wunderer, and F. Scholz
    Influence of slight misorientations of r-plane sapphire substrates on the growth of nonpolar a-plane GaN layers via HVPE
    Phys. Status Solidi (c) 7 (2010) pp. 2069-2072. (link)

  • T. Wunderer, J. Wang, F. Lipski, S. Schwaiger, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, S. S. Shirokov, A. E. Yunovich, and F. Scholz;
    Semipolar GaInN/GaN light-emitting diodes grown on honeycomb patterned substrates
    Phys. Status Solidi (c) 7 (2010) pp. 2140–2143. (link)

  • M. Barchuk, V. Holý, B. Miljević, B. Krause, T. Baumbach, J. Hertkorn, and F. Scholz
    X-ray diffuse scattering from threading dislocations in epitaxial GaN layers
    J. Appl. Phys. 108 (2010) pp. 043521. (link)

  • M. Feneberg, K. Thonke, T. Wunderer, F. Lipski, and F. Scholz;
    Piezoelectric polarization of semipolar and polar GaInN quantum wells grown on strained GaN templates
    J. Appl. Phys. 107 (2010) pp. 103517.  (link)

  • K. J. Fujan, M. Feneberg, B. Neuschl, T. Meisch, I. Tischer, K. Thonke, S. Schwaiger, I. Izadi, F. Scholz, L. Lechner, J. Biskupek, and U. Kaiser
    Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets
    Appl. Phys. Lett. 97 (2010) pp. 101904. (link)

  • O. Klein, J. Biskupek, U. Kaiser, K. Forghani, S. B. Thapa, and F. Scholz;
    Simulation supported analysis of the effect of SiNx interlayers in AlGaN on the dislocation density reduction
    J. Phys.: Conf. Ser. 209 (2010) pp. 012018. (link)

  • Kueck, Jochen Scharpf, Wolfgang Ebert, Mohamed Fikry, Ferdinand Scholz, and Erhard Kohn
    Passivation of H-terminated diamond with MOCVD-aluminium nitride – a key to understand and stabilize its surface conductivity
    Phys. Status Solidi (a) 207 (2010) pp. 2035–2039. (link)

  •  Kueck, Jochen Scharpf, Wolfgang Ebert, Mohamed Fikry, Ferdinand Scholz, and Erhard Kohn
    Passivation of H-terminated diamond with MOCVD-aluminium nitride – a key to understand and stabilize its surface conductivity
    Phys. Status Solidi (a) 207 (2010) pp. 2035–2039. (link)

  • B. Neuschl, K. J. Fujan, M. Feneberg, I. Tischer, K. Thonke, K. Forghani, M. Klein, and F. Scholz
    Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiNx interlayers
    Appl. Phys. Lett. 97 (2010) pp. 192108. (link)

    Q. Y. Wei, Z. H. Wu, F. A. Ponce, J. Hertkorn, and F. Scholz
    Polarization effects in 2-DEG and 2-DHG AlGaN/AlN/GaN multi-heterostructures measured by electron holography
    Phys. Status Solidi (b) 247 (2010) pp. 1722–1724. (link)