Publikationen 2014

  • M. Caliebe, T. Meisch, B. Neuschl, S. Bauer, J. Helbing, D. Beck, K. Thonke, M. Klein, D. Heinz and F. Scholz;
    Improvements of MOVPE grown (11-22) oriented GaN on pre-structured sapphire substrates using a SiNx interlayer and HVPE overgrowth
    Phys. Status Solidi C 11 (3-4) (2014) pp. 525 - 529 (link)

  • D. Heinz, M. Fikry, T. Aschenbrenner, M. Schowalter, T. Meisch, M. Madel, F. Huber, M. Hocker, M. Frey, I. Tischer, B. Neuschl, Th. Mehrtens, K. Müller, A. Rosennauer, D. Hommel, K. Thonke and F. Scholz;
    GaN tubes with coaxial non- and semipolar GaInN quantum wells
    Phys. Status Solidi C 11, No.3-4 (2014) pp. 648 - 651 (link)

  • M. Klein, T. Meisch, F. Lipski and F. Scholz;
    The influence of prestrained metalorganic vapor phase epitaxial gallium-nitride templates on hydride vapor phase epitaxial growth
    Applied Physics Letter 105, pp. 092109-1--4 (2014) (link)

  • T. Meisch, M. Alimoradi-Jazi, M. Klein and F. Scholz;
    (20-21) MOVPE and HVPE GaN grown on 2" patterned sapphire substrates
    Phys. Status Solidi C 11, No.3-4 (2014) pp. 537 - 540 (link)

  • F. Scholz, T. Meisch, M. Caliebe, S. Schörner, K. Thonke, L. Kirste,
    S. Bauer, S. Lazarev and T. Baumbach;
    Growth and doping of semipolar GaN grown on patterned sapphire substrates
    Journal of Crystal Growth 405, pp. 97 - 101 (2014) (link)

  • F. Scholz, M. Caliebe, T. Meisch, M. Alimoradi-Jazi, M. Klein, M.Hocker, B. Neuschl, I. Tischer and K. Thonke;
    Large area semipolar GaN grown on foreign substrates
    Proc. ECS  61, (2014) pp. 101-107 (link)

  • J. Wang, Y. Gao, S. Alam and F. Scholz;
    Mg doping of 3D semipolar InGaN/GaN-based light emitting diodes
    Phys. Status Solidi A, 211, pp. 2645-2649 (2014) (link)

  • E. R. Buß, U. Rossow, H. Bremers, T. Meisch, M. Caliebe, F. Scholz and A. Hangleiter;
    Intentional anisotropic strain relaxation in (1122) oriented AI1-xInxN one-dimensionally lattice matched to GaN
    Applied Physics Letters 105, pp. 122109-1--122109-4 (2014) (link)

  • Duc V. Dinh, F. Oehler, V. Z. Zubialevich, M. J. Kappers, S. N. Alam, M. Caliebe, F. Scholz, C. J. Humphreys and P. J. Parbrook;
    Comparative study of polar and semipolar (1122) InGaN layers grown by metalorganic vapour phase epitaxy
    Journal of Applied Physics 116, pp. 153505-1--153505-7 (2014) (link)

  • B. Neuschl, J. Helbing, M. Knab, H. Lauer, M. Madel, K. Thonke, T. Meisch, K. Forghani, F. Scholz and M. Feneberg;
    Composition dependent valence band order in c-oriented wurtzite AlGaN layers
    Journal of Applied Physics 116, pp. 113506-1--8 (2014) (link)

  • B.Neuschl, J. Helbing, K. Thonke, T. Meisch, J. Wang and F. Scholz;
    Optical absorption of polar and semipolar InGaN/GaN quantum wells for blue to green converter structures
    Journal of Applied Physics 116, pp. 183507-1--8  (2014) (link)

  • Ph. Schustek, M. Hocker, M. Klein, U. Simon, F. Scholz and K. Thonke;
    Spectroscopic study of semipolar (1122)-HVPE GaN exhibiting high oxygen incorporation
    Journal of Applied Physics 116, pp. 163515-1--163515-9  (2014) (link)

  • SK.S. Rahman, R.A.R. Leute, J. Wang, T. Meisch, M. Klein, F. Scholz, K. Koyama, M. Ishii and H. Takeda;
    LEDs on HVPE grown GaN substrates: Influence of macroscopic surface features
    AIP Advances 4, pp. 077119-1--077119-8 (2014) (link)

  • I. Tischer, M. Frey, M. Hocker, L. Jerg, M. Madel, B. Neuschl, K. Thonke, R. A.R. Leute, F. Scholz, H. Groiss, E. Müller, and D. Gerthsen;
    Basal plane stacking faults in semipolar AlGaN: Hints to Al redistribution
    Phys. Status Solidi B 251, No11, pp. 2321 - 2325 (2014) (link)

  • K. Thonke, I. Tischer, M. Hocker, M. Schirra, K. Fujan, M. Wiedenmann, R. Schneider, M. Frey and M. Feneberg;
    Nano-scale characterization of semiconductors by cathodoluminescence
    IOP Conf. Ser.: Mater. Sci. Eng. 55, pp. 012018-1--20 (2014) (link)