Ausgewählte Publikationen (2005-2017): Halbleiterphysik

Optical signatures of silicon and oxygen related DX centers in AlN
K. Thonke, M. Lamprecht, R. Collazo, Z. Sitar;
Phys. Status Solidi A 214, 1600749 (2017)

Evidence of terbium and oxygen co-segregation in annealed AlN:Tb
V. C. Angadi, F. Benz, I. Tischer, K. Thonke, T. Aoki, T. Walther;
Applied Physics Letters 110, 222102 (2017)

Persistent photoconductivity in ZnO nanowires: Influence of oxygen and argon ambient
M. Madel; F. Huber; R. Mueller; B. Amann;M. Dickel; Y. Xie; K. Thonke;
Journal of Applied Physics, 2017, 121, 124301

GaInN Quantum Wells as Optochemical Transducers for Chemical Sensors and Biosensors
D. Heinz, F. Huber, M. Spiess, M. Asad, L. Wu, O. Rettig, D. Wu, B. Neuschl, S. Bauer, Y. Wu, S. Chakrabortty, N. Hibst, S. Strehle, T. Weil, K. Thonke, F. Scholz;
Journal of Selected Topics in Quantum Electronics 3, 1-9 (2017)

Model for the deep defect-related emission bands between 1.4 and 2.4 eV in AlN
M. Lamprecht, V. N. Jmerik, R. Collazo, Z. Sitar, S. V. Ivanov, K. Thonke;
Phys. Status Solidi B 254, 1600714 (2017)

Three-dimensional cathodoluminescence characterization of a semipolar GaInN based LED sample
M. Hocker, P. Maier, I. Tischer, T. Meisch, M. Caliebe, F. Scholz, K. Thonke;
J. Appl. Phys. 121, 075702 (2017)

Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a ( 10-11) semipolar GaN template
Y. Li, H. Qi, T. Meisch; M. Hocker; K. Thonke, F. Scholz, U. Kaiser;
Applied Physics Letters, 2017, 110, 022105

Slow decay of a defect-related emission band at 2.05 eV in AlN: Signatures of oxygen-related DX states
M. Lamprecht, C. Grund, S. Bauer, R. Collazo, Z. Sitar, K. Thonke;
Phys. Status Solidi B 254, 1600338 (2017)

H2S sensing in the ppb regime with zinc oxide nanowires
F. Huber, S. Riegert, M. Madel, K. Thonke;
Sensors and Actuators B: Chemical, 239, 358-363 (2017)

Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state
M. Lamprecht, C. Grund, B. Neuschl, K. Thonke, Z. Bryan, R. Collazo, Z. Sitar;
J. Appl. Phys. 119, 155701 (2016)

Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence
M. Hocker, P. Maier, L. Jerg, I. Tischer, G. Neusser, C. Kranz, M. Pristovsek, C. J. Humphreys, R. A. R. Leute, D. Heinz, O. Rettig, F. Scholz, K. Thonke;
Journal of Applied Physics 120, 085703 (2016)

Stacking fault emission in GaN: Influence of n-type doping
M. Hocker, I. Tischer, B. Neuschl, K. Thonke, M. Caliebe, M. Klein, F. Scholz;
Journal of Applied Physics 119, 185703 (2016)

Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy
T. Aschenbrenner, M. Schowalter, T. Mehrtens, K. Müller-Caspary, M. Fikry, D. Heinz, I. Tischer, M. Madel, K. Thonke, D. Hommel, F. Scholz, A. Rosenauer;
Journal of Applied Physics 119, 175701 (2016)

New CVD-based method for the growth of high-quality crystalline zinc oxide layers
F. Huber, M. Madel, A. Reiser, S. Bauer, K. Thonke;
Journal of Crystal Growth 445, 58-62 (2016)

Doping behavior of (11-22) GaN grown on patterned sapphire substrates“
T. Meisch, R. Zeller, S. Schörner, K. Thonke, L. Kirste, T. Fuchs, F. Scholz;
Phys. Stat. Sol. B 253, 164 (2016)

Zeeman spectroscopy of the internal transition 4T1 to 6A1 of Fe3+ ions in wurtzite GaN
B. Neuschl, M. L. Gödecke, K. Thonke, F. Lipski, M. Klein, F. Scholz, M. Feneberg;
Journal of Applied Physics 118, 215705 (2015)

Optical Properties of Defects in Nitride Semiconductors
I. Tischer, M. Hocker, B. Neuschl, M. Madel, M. Feneberg, M. Schirra, M. Frey, M. Knab, P. Maier, T. Wunderer, R. Leute, J. Wang, F. Scholz, J. Biskupek, J. Bernhard, U. Kaiser, U. Simon, L. Dieterle, H. Groiss, E. Müller, D. Gerthsen, K. Thonke;
Journal of Materials Research 30, 2977 (2015)

Semipolar GaN-based hetero-structures on foreign substrates
F. Scholz, M. Caliebe, G. Gahramanova, D. Heinz, M. Klein, R. A. R. Leute, T. Meisch, J. Wang, M. Hocker, K. Thonke;
Phys. Stat. Sol. B 253, 13 (2015)

Embedded GaN Nanostripes on c-sapphire for DFB Lasers with semipolar Quantum Wells
R. A. R Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kneissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke, F. Scholz;
Phys. Stat. Sol. B 253, 180 /2015)

Growth and coalescence studies of (11-22) oriented GaN on pre-structured sapphire substrates using marker layers
M. Caliebe, Y. Han, M. Hocker, T. Meisch, C. Humphreys, K. Thonke, F. Scholz;
Phys. Stat. Sol. B 253, 46 (2015)

EBIC investigations on polar and semipolar InGaN LED structures
M. Knab, M. Hocker, T. Felser , I. Tischer, J. Wang , F. Scholz, K. Thonke;
Phys. Stat. Sol. B 253, 46 (2015)

Optical gas sensing by micro-photoluminescence on multiple and single ZnO nanowires
M. Madel, J. Jakob, F. Huber, B. Neuschl, S. Bauer, Y. Xie, I. Tischer,  K. Thonke;
Phys. Stat. Sol. A, 212, 8, 1862 (2015)

The measurement of the diffusion length and the life time of free excitons in gallium nitride by cathodoluminescence under different conditions of luminescence excitation
N.A. Nikiforova, N.N. Mikheev, M.A. Stepovich, M. Hocker, I. Tischer;
Jour. of Surface Investigation, X-Ray, Synchrotron, and Neutron Techniques, 9, 4, 839 (2015)

c-plane ZnO on a-plane sapphire: Inclusion of (1-101) domains
M. Madel, G. Neusser, U. Simon, B. Mizaikoff, K. Thonke;
Journal of Crystal Growth 419, 28-132 (2015)

Optical absorption of polar and semipolar InGaN/GaN quantum wells for blue
B. Neuschl, J. Helbing, K. Thonke, T. Meisch, J, Wang, F. Scholz;
J. Appl. Phys 116, 183505 (2014)

Spectroscopic study of semipolar (11-22)-HVPE GaN exhibiting high oxygen incorporation
P. Schustek, M. Hocker, M. Klein, U. Simon, F. Scholz, K. Thonke;
J. Appl. Phys. 116, 163515 (2014)

Composition dependent valence band order in c-oriented wurtzite AlGaN
B. Neuschl, J. Helbing, M. Knab, H. Lauer, M. Madel, K. Thonke, T. Meisch, K. Forghani, F. Scholz, M. Feneberg;
J. Appl. Phys. 116, 113506 (2014)

Growth and doping of semipolar GaN grown on patterned sapphire substrates
F. Scholz, T. Meisch, M. Caliebe, S. Schörner, K. Thonke, L. Kirste, S. Bauer, S. Lazarev, T. Baumbach
J. Crystal Growth 405, 97 (2014)

Basal plane stacking faults in semipolar AlGaN: Hints to Al redistribution
I. Tischer, M. Frey, M. Hocker, L. Jerg, M. Madel, B. Neuschl, K. Thonke, R. A.R. Leute, F. Scholz , H. Groiss, E. Müller, D. Gerthsen;
Phys. Stat. Sol. B 251

Improvements of MOVPE grown (11-22) oriented GaN using a SiNx interlayer and HVPE overgrowth
M. Caliebe, T. Meisch, B. Neuschl, S. Bauer, J. Helbing, D. Beck, S. Schörner, K. Thonke, M. Klein, D. Heinz, F. Scholz;
PSSC 11, 525 (2014)

Nano-scale characterization of semiconductors by cathodoluminescence
K. Thonke, I. Tischer, M. Hocker, M. Schirra, K. Fujan, M. Wiedenmann, R. Schneider, M. Frey, M. Feneberg;
Journal of Physics: Conference Series, Mater. Sci. Eng.

Large Area Semipolar GaN Grown on Foreign Substrates
F. Scholz, M. Caliebe, T. Meisch, M. Alimoradi-Jazi, M. Klein, M. Hocker, B. Neuschl, I. Tischer, K. Thonke;
ECS Proceedings 61, 101 (2014)

Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AlN
M. Feneberg, M. F. Romero, B. Neuschl, K. Thonke, M. Röppischer, C. Cobet, M. Bickermann, R. Goldhahn;
Thin Solid Films (2013) (online)

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
B. Neuschl, K. Thonke, M. Feneberg, R. Goldhahn, T. Wunderer, Z. Yang, N. M. Johnson, J. Xie, S. Mita, A. Rice, R. Collazo, Z. Sitar;
Appl. Phys. Lett. 103

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
B. Neuschl, K. Thonke, M. Feneberg, R. Goldhahn, T. Wunderer, Z. Yang, N. M. Johnson, J. Xie, S. Mita, A. Rice, R. Collazo, Z. Sitar;
Appl. Phys. Lett.103

Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (11-22) GaN layers grown from the sidewall of an r-patterned sapphire substrate
S. Lazarev, S. Bauer, T. Meisch, M. Bauer, I. Tischer, M. Barchuk, K. Thonke, V. Holy, F. Scholz, T. Baumbach;
J. Appl. Cryst. 46, 1425-1433 (2013)

Anisotropic Absorption and Emission Studies of bulk (1-100) AlN
M. Feneberg, M. F. Romero, M. Röppischer, Ch. Cobet, N. Esser, B. Neuschl, K. Thonke, M. Bickermann, R. Goldhahn;
Phys. Rev. B 87, 235209 (2013)

Optical Properties of ZnO/GaN/InGaN Core-Shell Nanorods
I. Tischer, M. Hocker, M. Fikry, M. Madel, M. Schied, Z. Ren, F. Scholz, K. Thonke;
Japanese Journal of Applied Physics 52 (2013) 075201-075205

InGaN/GaN based semipolar green converters
J. Wang, D. Zhang, R.A.R. Leute, T. Meisch, D. Heinz, I. Tischer, M. Hocker, K. Thonke, F. Scholz;
Journal of Crystal Growth 370 (2013), 120 - 123

Coaxial InGaN epitaxy around GaN micro-tubes: Tracing the signs
M. Fikry, Z. Ren, M. Madel, I. Tischer, K. Thonke, F. Scholz;
Journal of Crystal Growth 370 (2013), 319 - 322

Ga(In)N photonic crystal light emitters with semipolar quantum wells
D. Heinz, R.A.R. Leute, S. Kizir, Y. Li, T. Meisch, K. Thonke, F. Scholz;
Japanese Journal of Applied Physics 52 (2013), 062101 - 062106

GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures
R.A.R. Leute , D. Heinz , J. Wanga, F. Lipski , T. Meisch , K. Thonke, J. Thalmair , J. Zweck, F. Scholz;
Journal of Crystal Growth 370 (2013) 101–104

Negative spin-exchange splitting in the exciton fine structure of AlN
M. Feneberg, M.F. Romero, B. Neuschl, K. Thonke, M. Röppischer, C. Cobet, N. Esser, M. Bickermann, R. Goldhahn;
Appl. Phys. Lett. 102, 052112 (2013)

Studies on defect reduction in AlGaN hetero-structures
F. Scholz, K. Forghani, M. Klein, O. Klein, U. Kaiser, B. Neuschl, I. Tischer, M. Feneberg, K. Thonke, S. Lazarev, S. Bauer, T. Baumbach;
Japanese Journal of Applied Physics 52 (2013) 08JJ07-08JJ10

Enforced c-axis growth of ZnO epitaxial chemical vapor deposition films on a-plane sapphire
Y. Xie, M. Madel, T. Zoberbier, A. Reiser, W. Jie, B. Neuschl, J. Biskupek, U. Kaiser, M. Feneberg, K. Thonke;
Phys. Stat. Sol. B249, 511 (2012)

Plant viral nanoscale biotemplates: From virowires to dumbbells and arrays
C. Wege, H. Jeske, A. Mueller, F. J. Eber, A. Kadri, S. Balci, G. Baralia, N. Amsharov, A. Petershans, C. Azucena, H. Gliemann, K. Thonke, M. Schirra, Z. Wu, C. Krill III, A. M. Bittner;
Nanotechnology - Fundamentals and Applications of Functional Nanostructures (T. Schimmel, H. v. Löhneysen, and M. Barcewski, Eds.), ISBN 978-3-00-030810-9; pp. 383-407. Baden-Württemberg-Stiftung, Karlsruhe

Luminescence properties of epitaxially grown GaN and InGaN layers around ZnO nanopillars
M. Fikry, M. Madel, I. Tischer, K. Thonke, F. Scholz;
physica status solidi (a) 208, 1582-1585 (2011)

Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al0.94Ga0.06N
M. Feneberg, M. Röppischer, N. Esser, C. Cobet, B. Neuschl, T. Meisch, K. Thonke, R. Goldhahn;
Appl. Phys. Lett. 99, 021903 (2011)

Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge
G. Rossbach, M. Feneberg, M. Röppischer, C. Werner, N. Esser, C. Cobet, T. Meisch, K. Thonke, A. Dadgar, J. Bläsing, A. Krost, R. Goldhahn;
Phys. Rev. B. 83, 195202 (2011)

Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods
G.Kunert, W. Freund, T. Aschenbrenner, C. Kruse, S. Figge, J. Kalden, K. Sebald, J. Gutowski, M. Feneberg, I. Tischer, K. Fujan, K. Thonke, M. Schowalter, A.Rosenauer, D. Hommel;
Nanotechnology 22, 265202 (2011)

Basal plane stacking fault in GaN: origin of the 3.32 eV luminescence band
I. Tischer, M. Feneberg, M. Schirra, H. Yacoub, R. Sauer, K. Thonke, T. Wunderer, F. Scholz, L. Dieterle, E. Müller, D. Gerthsen;
Phys. Rev. B. 83, 035314 (2011)

Three-dimensional GaN for semipolar light emitters
T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, D. Dräger, A. Hangleiter, F. Scholz;
physica status solidi (b) 248, 549 (2011)

Quaternary AlxInyGa1-x-yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficient light emission
M. Jetter, C. Wächter, A. Mayer, M. Feneberg, K. Thonke, P. Michler;
Journal of Crystal Growth 315, 254 (2011)

Droplet epitaxy of zinc-blende GaN quantum dots
T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, D. J. As
Journal of Crystal Growth 312, 3235 (2010)

Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiN
B. Neuschl, K. J. Fujan, M. Feneberg, I. Tischer, K. Thonke, K. Forghani, M. Klein, F. Scholz;
Appl. Phys. Lett. 97, 192108 (2010)

High-excitation and high-resolution photoluminescence spectra of bulk AlN
M. Feneberg, R. A. R. Leute, B. Neuschl, K. Thonke, M. Bickermann;
Phys. Rev. B. 82, 075208 (2010)

High quality AlGaN epilayers grown directly on sapphire without GaN buffer layer
K. Forghani, M. Klein, F. Lipski, S. Schwaiger, J. Hertkorn, F. Scholz, M. Feneberg, B. Neuschl, R. A. R. Leute, I. Tischer, K. Thonke, O. Klein, U. Kaiser, T. Passow, R. Gutt;
15th ICMOVPE 2010

Cathodoluminescence of GaInN quantum wells grown on nonpolar a-plane GaN: Intense emission from pit facets
K. J. Fujan, M. Feneberg, B. Neuschl, T. Meisch, I. Tischer, K. Thonke, S. Schwaiger, I. Izadi, F. Scholz, L. Lechner, J. Biskupek, U. Kaiser;
Appl. Phys. Lett. 97, 101904 (2010)

Growth of cubic GaN quantum dots
T. Schupp, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, D. J. As ;
EMRS 2010

Piezoelectric polarization of semipolar and polar GaInN quantum wells grown on strained GaN templates
M. Feneberg, K. Thonke, T. Wunderer, F. Lipski, F. Scholz;
J. Appl. Phys. 107, 103517 (2010)

The role of stacking faults and their associated 0.13 eV acceptor state in doped and undoped ZnO layers and nanostructures
K. Thonke, M. Schirra, R. Schneider, A. Reiser, G. M. Prinz, M. Feneberg, R. Sauer, J. Biskupek, U. Kaiser;
phys. stat. sol. (b) 247, 1464 (2010)

Scaling relation of the anomalous Hall effect in (Ga,Mn)As
M. Glunk, J. Daeubler, W. Schoch, R. Sauer, W. Limmer;
Phys. Rev. Lett. 102, 073903 (2009)

Studies towards Freestanding GaN in Hydride Vapor Phase Epitaxy by In-situ Etching of a Sacrificial ZnO Buffer Layer
F. Lipski, S.B. Thapa, J. Hertkorn, T. Wunderer, S. Schwaiger, F. Scholz, M. Feneberg, K. Thonke, H. Hochmuth, M. Lorenz, M. Grundmann;
phys. stat. sol. (c) 6, 352 (2009)

The role of stacking faults and their associated 0.13 eV acceptor state in doped and undoped ZnO layers and nanostructures
K. Thonke, M. Schirra, R. Schneider, A. Reiser, G.M. Prinz, M. Feneberg, J. Biskupek, U. Kaiser, R. Sauer;
Microelectronics Journal 40, 210 (2009)

Magnetic anisotropy in (Ga,Mn)As: Influence of epitaxial strain and hole concentration
M. Glunk, J. Daeubler, L. Dreher, S. Schwaiger, W. Schoch, R. Sauer, and W. Limmer, A. Brandlmaier, S.T.B. Goennenwein, C. Bihler, M.S. Brandt;
Physical Review B 79, 195206 (2009)

Catalytic coating of virus particles with zinc oxide
S. Balci, A. M. Bittner, M. Schirra, K. Thonke, R. Sauer, K. Hahn, A. Kadri, C. Wege, H. Jeske, K. Kern;
Electrochim. Acta 54, 5149 (2009)

Influence of strain on the band gap energy of wurtzite InN
P. Schley, R. Goldhahn, G. Gobsch, M. Feneberg, K. Thonke, X. Q. Wang, A. Yoshikawa;
IWN2008, phys. stat. sol. b 246, 1177 (2009)

Influence of the measurement procedure on the field-effect dependent conductivity of ZnO nanorods
D. Weissenberger, D. Gerthsen, A. Reiser, G. M. Prinz, M. Feneberg, K. Thonke, H. Zhou, J. Sartor, J. Fallert, H. Kalt, C. Klingshirn;
Appl. Phys. Lett. 94, 042107 (2009)

Properties of blue and green InGaN/GaN quantum well emission on structured semipolar surfaces
T. Wunderer, F. Lipski, S. Schwaiger, J. Hertkorn, F. Scholz, M. Wiedenmann, M. Feneberg, K. Thonke;
Jpn. J. Appl. Phys. 48, 060201 (2009)

GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets
F. Scholz, T. Wunderer, B. Neubert, M. Feneberg, K. Thonke;

Theme article, MRS Bulletin 34, 297 (2009)

Epitaxial growth of coaxial GaInN-GaN hetero-nanotubes
F. Scholz, S. B. Thapa, M. Fikry, J. Hertkorn, T. Wunderer, F. Lipski, A. Reiser, Y. Xie, M. Feneberg, K. Thonke, R. Sauer, M. Dürrschnabel, L. D. Yao, D. Gerthsen;
IOP Conf. Series: Materials Science and Engineering 6, 012002 (2009)

High excitation photoluminescence on aluminum nitride layers: biexcitons and exciton-exciton scattering
R.A.R. Leute, M. Feneberg, R. Sauer, K. Thonke, S. B. Thapa, F. Scholz, Y. Taniyasu, M. Kasu;
Appl. Phys. Lett. 95, 031903 (2009)

Semiconductor Quantum Dots by Conversion of Micelle-generated Metal Clusters
D. Wahl, A. Ladenburger, M. Feneberg, W. Schoch, K. Thonke, R. Sauer;
Appl. Phys. Lett. 95, 093105 (2009)

GaInN-based LED structures on selectively grown semi-polar crystal facets
F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen;
phys. stat. sol. (accepted, proceedings of ICNS) (2009)

Light emission from nanocrystalline silicon clusters embedded in silicon dioxide: Role of suboxide states
A. Romanyuk, V. Melnik, Y. Olikh, J. Biskupek, U. Kaiser, M. Feneberg, K. Thonke, P. Oelhafen;
J. Lumin. 130, 87 (2009)

Removal of structural defects after high-dose Ga-implantation of ZnOnanorods by annealing treatments
L. D. Yao, M. Dürrschnabel, D. Weissenberger, D. Gerthsen, M. Feneberg, I. Tischer, M. Wiedenmann, K. Thonke;
J. Appl. Phys. 105, 103521 (2009)

Transparent microelectrodes array in diamond technology
Z. Gao, V. Carabelli, E. Carbone, E. Colombo, M. Dipalo, M. Feneberg, A. Pasquarelli, K. Thonke, E. Kohn;
IEEE Nanomed 2009

Gamma[sub 7] valence band symmetry related hole fine splitting of bound excitons in ZnO observed in magneto-optical studies
M. R. Wagner, J.-H. Schulze, R. Kirste, M. Cobet, A. Hoffmann, C. Rauch, A. V. Rodina, B. K. Meyer, U. Röder, K. Thonke;
Physical Review B 80, 205203 (2009)

Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers
W. Limmer, J. Daeubler, L. Dreher, M. Glunk, W. Schoch, S. Schwaiger, R. Sauer;
Physical Review B 77, 205210 (2008)

GaMnAs on InGaAs templates: Influence of strain on the electronic and magnetic properties
J. Daeubler, S. Schwaiger, M. Glunk, M. Tabor, W. Schoch, R. Sauer, W. Limmer;
Physica E 40, 1876 (2008)

Near band-gap photoluminescence of InN due to Mahan excitons
M. Feneberg, J. Däubler, K. Thonke, R. Sauer, P. Schley, R. Goldhahn;
IWN2008, Phys. Stat. Sol. (c) 6, 385 (2008)

Influence of doping on the reliability of AlGaInP LEDs
P. Altieri-Weimar, A. Jaeger, T. Lutz, P. Stauss, K. Streubel, K. Thonke, R. Sauer;
Journal of Materials Science: Materials in Electronics (2008)

Growth and Studies of Si doped AlN layer
S.B. Thapa, J. Hertkorn, F. Scholz , G. M. Prinz, M. Feneberg, M. Schirra, K. Thonke, R. Sauer, O. Klein, J. Biskupek, U. Kaiser;
Journal of Crystal Growth 310, 4939 (2008)

MOVPE Growth of GaN around ZnO nanopillars
S. B. Thapa, J. Hertkorn, T. Wunderer, F. Scholz, A. Reiser, G. M. Prinz, M. Schirra, K. Thonke, R. Sauer;
Journal of Crystal Growth 310, 5139 (2008)

Silicon-doping induced strain of AlN layers: a comparative luminescence and Raman study
G. M. Prinz, M. Feneberg, M. Schirra, R. Sauer, K. Thonke, S. Thapa, F. Scholz;
Phys. Stat. Sol. (RRL) (2008)

Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on {1-101} GaN side facets
T. Wunderer, J. Hertkorn, F. Lipski, P. Brückner, M. Feneberg, M. Schirra, K. Thonke, I. Knoke, E. Meissner, A. Chuvilin, U. Kaiser, F. Scholz;
Photonics West (2007), Proc. of SPIE Vol. 6894 68940V-1 (2008)

Incorporation of Ga in ZnO/GaN epitaxial films
R. Schneider, M. Schirra, A. Reiser, G. M. Prinz, W. Limmer, R. Sauer, K. Thonke, J. Biskupek, U. Kaiser;
Applied Physics Letters 92, 131905 (2008)

Zinc Oxide Nanostructures: Optical resonators and lasing
K. Thonke, A. Reiser, M. Schirra, M. Feneberg, G.M. Prinz, T. Röder, R. Sauer, J. Fallert, F. Stelzl, H. Kalt, S. Gsell, M. Schreck, B. Stritzker;
Advances in Solid State Physics 48, edited by R. Haug, Springer, Berlin and Heidelberg (2008)

Growth of high-quality, uniform c-axis oriented ZnO nanowires on a-plane sapphire substrates with basic zinc acetate/ZnO templates
A. Reiser, V. Raeesi, G.M. Prinz, M. Schirra, M. Feneberg, U. Röder, R. Sauer, K. Thonke;
Microelectronics Journal 40, 306 (2008)

High quantum efficiency of semipolar GaInN/GaN quantum wells
M. Feneberg, F. Lipski, M. Schirra, R. Sauer, K. Thonke, T. Wunderer, P. Brückner, F. Scholz;
Physica Status Solidi (c) 5, 2089 (2008)

MOVPE growth of high quality AlN layers and effects of Si doping
S. B. Thapa, J. Hertkorn, F. Scholz, G.M. Prinz, M. Feneberg, M. Schirra, K. Thonke, R. Sauer, J. Biskupek, and U. Kaiser
Physica Status Solidi (c) 5, 1774 (2008)

Mahan excitons in degenerate wurtzite InN: Photoluminescence spectroscopy and reflectivity measurements
M. Feneberg, J. Daeubler, K. Thonke, R. Sauer, P. Schley, R. Goldhahn;
Phys. Rev. B 77, 245207 (2008) >

Stacking fault related 3.31-eV luminescence at 130-meV acceptors in zinc oxide
M. Schirra, R. Schneider, A. Reiser, G.M. Prinz, M. Feneberg, J. Biskupek, U. Kaiser, C.E. Krill, K. Thonke, R. Sauer;
Phys. Rev. B 77, 125215 (2008)

Magnetic anisotropy and magnetization switching in ferromagnetic GaMnAs
W. Limmer, J. Daeubler, M. Glunk, T. Hummel, W. Schoch, S. Schwaiger, M. Tabor, and R. Sauer
Advances in Solid State Physics, edited by R. Haug, Springer, Berlin and Heidelberg (2008), Vol. 47, 91

Lasing dynamics in single ZnO nanorods
J. Fallert, F. Stelzl, H. Zhou, C. Klingshirn, H. Kalt, A. Reiser, K. Thonke, R. Sauer;
Optics Express 16, 1125 (2008)

Band gap and effective electron mass of cubic InN
P. Schley , C. Napierala, R. Goldhahn, G. Gobsch, J. Schörmann, D. J. As, K. Lischka, M. Feneberg, K. Thonke, F. Fuchs, F. Bechstedt;
Phys. Stat. Sol. C 5, 2342 (2008)

Dielectric function of cubic InN from the mid-infrared to the visible spectral range
P. Schley, R. Goldhahn, C. Napierala, G. Gobsch, J. Schörmann, D. J. As, K. Lischka, M. Feneberg, K. Thonke;
Semicon. Science Techn. 23, 055001 (2008)

Optical properties of cubic InN from mid-IR into the VUV range
P. Schley, C. Napierala, R. Goldhahn, G. Gobsch, J. Schörmann, D.J. As, K. Lischka, M. Feneberg, K. Thonke, F. Fuchs, F. Bechstedt;
Phys. Stat. Sol. (c) 5, 2342 (2008)

Bluish-green semipolar GaInN/GaN light emitting diode on {1-101} GaN side facets
T. Wunderer, F. Lipski, J. Hertkorn, P. Brückner, F. Scholz, M. Feneberg, M. Schirra, K. Thonke, A. Chuvilin, U. Kaiser;
phys. stat. sol. (c) 5, 2059 (2008)

Lasing Dynamics in single ZnO nanorods
J. Fallert, F. Stelzl, H. Zhou, C. Klingshirn, H. Kalt, A. Reiser, K. Thonke, R. Sauer;
Optics Express 16, 1125 (2007)

Polarization fields of III-nitrides grown in different crystal orientations
M. Feneberg and K. Thonke;
J. Phys.: Cond. Matter 19, 403201 (2007)

Dynamics of stimulated emission in single ZnO nanorod-resonators
J. Fallert, F. Stelzl, M. Wissinger, M. Hauser, C. Klingshirn, H. Kalt, A. Reiser, R. Sauer, K. Thonke;
Int. Conf. On II-VI Semicond., Jeju, (2007), Korean J. of Physics 53, 2840 (2007)

MOVPE Growth of High Quality AlN Layers and Effects of Si-doping
S.B. Thapa, J. Hertkorn, F. Scholz, G. M Prinz, K. Thonke, R. Sauer;
Extended Abstract Booklet EW-MOVPE XII, Bratislava, Slovakia, June 2007, pp. 65-68

Heteroepitaxial Growth of GaN on ZnO by MOVPE
S. B. Thapa, E. Angelopoulos, J. Hertkorn, F. Scholz, A. Reiser, K. Thonke, R. Sauer, H. Hochmuth, M. Lorenz, M. Grundmann;
Extended Abstract Booklet EW-MOVPE XII, Bratislava, Slovakia, June 2007

Piezoelectric Fields in Tilted GaInN Quantum Wells
M. Feneberg, F. Lipski, R. Sauer, K. Thonke, T. Wunderer, P. Brückner, F. Scholz;
Mater. Res. Soc. Symp. Proc. Vol. 955, 0955-I12-02 (2007)

Conductivity of single ZnO nanorods after Ga implantation in a focused-ion-beam system
D. Weissenberger, M. Dürrschnabel, D. Gerthsen, F. Pérez-Willard, A. Reiser, G.M. Prinz, M. Feneberg, K. Thonke, R. Sauer;
Appl. Phys. Lett. 91, 132110 (2007)
übernommen in Virt. J. Nanoscale Sci. and Techn., Ausgabe October 8 (2007)

Acceptor-related luminescence at 3.314 eV in zinc oxide confined to crystallographic line defects
M. Schirra, R. Schneider, A. Reiser, G.M. Prinz, M. Feneberg, J. Biskupek, U. Kaiser, C.E. Krill, R. Sauer, K. Thonke;
Physica B 401-402, 362 (2007)

Optimization of Nucleation and Buffer Layer Growth for Improved GaN Quality and Device Performance
J. Hertkorn, P. Brückner, S.B. Thapa, T. Wunderer, F. Scholz, M. Feneberg, K. Thonke, R. Sauer, M. Beer, J. Zweck;
J. Cryst. Growth 308, 30 (2007)

Growth of Zinc Oxide Nanopillars on an Iridium/Yttria-Stabilized Zirconia/Silicon Substrate
G.M. Prinz, A. Reiser, T. Röder, M. Schirra, M. Feneberg, U. Röder, K. Thonke, R. Sauer, S. Gsell, M. Schreck, B. Stritzker;
Appl. Phys. Lett. 90, 233115 (2007)

Cathodoluminescence study of single ZnO nanopillars with high spatial and spectral resolution
M. Schirra, A. Reiser, G.M. Prinz, A. Ladenburger, R. Sauer, K. Thonke, S.Gsell, M. Schreck, B. Strizker;
J. Appl. Phys. 101, 113509 (2007)
übernommen in: Virt. J. Nanoscale Sci. and Techn., Ausgabe June 18 (2007)

Regular silicon pillars and dichroic filters produced via particle imprinted membranes
A. Ladenburger, A. Reiser, J. Konle, M. Feneberg, R. Sauer, K. Thonke, F. Yan, W.A. Goedel;
J. Appl. Phys. 101, 034302 (2007)

Spatially Resolved Study of Magnesium Incorporation in Zn1-xMgxO Nanostructures
M. Schirra, A. Reiser, G. M. Prinz, R. Schneider, R. Sauer, K. Thonke;
Mater. Res. Soc. Symp. Proc. Vol. 957, K03-07 (2007)

Surface and interface electronic properties of AlGaN (0001) epitaxial layers
A. Rizzi, M. Kocan, J. Malindretos, A. Schildknecht, N. Teofilov, K. Thonke, R. Sauer;
Appl. Physics A 87, 505 (2007)

Polarized light emission from semipolar GaInN quantum wells on {1-101} GaN facets
M. Feneberg, F. Lipski, R. Sauer, K. Thonke, P. Brückner, B. Neubert, T. Wunderer, F. Scholz;
J. Appl. Phys. 101, 053530 (2007)

Photoluminescence from ultra-thin ZnO/ZnMgO quantum wells
P. Misra, T. K. Sharma, G. M. Prinz, K. Thonke, L. M. Kukreja;
IUMRS India (2007)

Time- and locally resolved photoluminescence of semipolar GaInN/GaN facet light emitting diodes
T. Wunderer, P. Brückner, J. Hertkorn, F. Scholz, G.J. Beirne, M. Jetter, P. Michler, M. Feneberg, K. Thonke;
Appl. Phys. Lett. 90, 171123 (2007) and May 2007 issue of Virtual Journal of Ultrafast Science

Structural and spectroscopic properties of AlN layers grown by MOVPE
S. B. Thapa, C. Kirchner, F. Scholz, G.M. Prinz, K. Thonke, R. Sauer, A. Chuvilin, J. Biskupek, U. Kaiser, D. Hofstetter;
J. Cryst. Growth 298, 383 (2007)

Cathdoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate
G. M. Prinz, A. Ladenburger, M. Schirra, M. Feneberg, K. Thonke, R. Sauer, Y. Taniyasu, M. Kasu, T. Makimotu;
J. Appl. Phys. 101, 023511 (2007)

SOI-based silion quantum dots contacted by self-aligned nano-electrodes
C. R. Wolf, A. Ladenburger, R. Enchelmaier, K. Thonke, R. Sauer;
Mater. Res. Soc. Symp. Proc. Vol. 958, L10-21 (2007)

Controlled catalytic growth and characterization of zinc oxide nanopillars on a-plane sapphire
A. Reiser, A. Ladenburger, G.M. Prinz, M. Schirra, M. Feneberg, A. Langlois, R. Enchelmaier, Y. Li, R. Sauer und K. Thonke
J. Appl. Phys. 101, 054319 (2007)

Semipolar GaN/GaInN LEDs with more than 1mW optical output power
B. Neubert, T. Wunderer, P. Brückner, F. Scholz, M. Feneberg, F. Lipski, M. Schirra, K. Thonke;
J. Cryst. Growth 298, 706 (2007)

Cathodoluminescence studies of GaN/AlGaN quantum dots
K. Surowiecka, M. Schirra, A. Wysmolek, R. Bozek, K. Pakula, J.M. Baranowski, K. Thonke, R. Sauer, R. Stepniewski;
XXXV International School on the Physics of Semiconducting Compounds Jaszowiec (2006)

Piezoelectric fields in GaInN/GaN quantum wells on different crystal facets
M. Feneberg, F. Lipski, R. Sauer, K. Thonke, T. Wunderer, B. Neubert, P. Brückner, F. Scholz;
Appl. Phys. Lett. 89, 242112 (2006)

Photoluminescence, cathodoluminescence, and reflectance study of AlN layers and AlN single crystals
G.M. Prinz, A. Ladenburger, M. Feneberg, M. Schirra, S.B. Thapa, M. Bickermann, B.M. Epelbaum, F. Scholz, K. Thonke, R. Sauer;
Superlattices and Microstructures 40, 513 (2006)

Concept for diamond 3-D integrated UV sensor
A. Kaiser, D. Kueck, P. Benkart, A. Munding, G.M. Prinz, A. Heittmann, H. Hübner, R. Sauer, E. Kohn;
Diamond and Related Materials 15, 1967 (2006)

Temperature-dependent photoluminescence from type-II InSb/InAs quantum dots
O. G. Lyublinskaya, V. A. Solov'ev, A. N. Semenov, B. Y. Meltser, Y. V. Terent'ev, L. A. Prokopova, A. A. Toropov, A. A. Sitnikova, O. V. Rykhova, S. V. Ivanov, K. Thonke R. Sauer;
J. Appl. Phys. 99, 093517 (2006)

Au-catalyzed growth processes and luminescence properties of ZnO nanopillars on Si
Y. Li., M. Feneberg, A. Reiser, M. Schirra, R. Enchelmaier, A. Ladenburger, A. Langlois, J. Cai, H. Rauscher, R. Sauer, and K. Thonke
J. Appl. Phys. 99, 054307 (2006)
übernommen nach: Virt. J. Nanoscale Sci. and Techn. 13, March 20, Issue 11 (2006)

Spatially Resolved Cathodoluminescence, Photoluminescence, Elektroluminescence, and Reflectance Study of GaInN Quantum Wells On Non-(0001)GaN Facets
M. Feneberg, M. Schirra, K. Thonke, R. Sauer, B. Neubert, R. Brückner, F. Scholz;
phys. stat. solidi (b) 243, 1619 (2006)

Donor phosphorus interactions observed by bound exciton luminescence in CVD diamond
G.M. Prinz, K. Thonke, R. Sauer, S. Koizumi;
Diamond and Related Materials 15, 564 (2006)

Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As
W. Limmer, M. Glunk, J. Daeubler, T. Hummel, W. Schoch, R. Sauer, C. Bihler, H. Huebl, M. S. Brandt, S. T. B. Goennenwein;
Physical Review B 74, 205205 (2006)

Magnetic anisotropy in (Ga,Mn)As on GaAs(113)A studied by magnetotransport and ferromagnetic resonance
W. Limmer, M. Glunk, J. Daeubler, T. Hummel, W. Schoch, C. Bihler, H. Huebl, M.S. Brandt, S.T.B. Goennenwein, R. Sauer;
Microelectronics Journal 37, 1490 (2006)

(Ga,Mn)As on patterned GaAs(001) substrates: Growth and magnetotransport
W. Limmer, J. Daeubler, M. Glunk, T. Hummel, W. Schoch, R. Sauer;
Microelectronics Journal 37, 1535 (2006)

Lattice parameter and hole density of (Ga,Mn)As on GaAs(311)A
J. Daeubler, M. Glunk, W. Schoch, W. Limmer, R. Sauer;
Applied Physics Letters 88, 051904 (2006)

Bright semipolar GaInN/GaN blue light emitting diode on side facets of selectively grown GaN stripes
T. Wunderer, P. Brückner, B. Neubert, F. Scholz, M. Feneberg, F. Lipski, M. Schirra, K. Thonke;
Appl. Phys. Lett. 89, 041121 (2006) and Virtual Journal of Nanoscale Science & Technology (Aug. 7, 2006)

High quality GaN layers grown on slightly miscut sapphire wafers
P. Brückner, M. Feneberg, K. Thonke, F. Habel, F. Scholz;
Mater. Res. Soc. Symp. Proc. Vol. 892, FF21-04

Investigations on local Ga and In incorporation of GaInN quantum wells on facets of selectively grown GaN stripes
B. Neubert, F. Habel, P. Brückner, F. Scholz, M. Schirra, M. Feneberg, K. Thonke, T. Riemann, J. Christen, M. Beer, J. Zweck, G. Moutchnik, M. Jetter;
phys. Stat. Sol. (c) 3, 1587-1590 (2006)

Characteristics of GaInN quantum wells grown on non-(0001) facets of selectively grown GaN stripes
B. Neubert, F. Habel, P. Brückner, F. Scholz, M. Schirra, M. Feneberg, K. Thonke, T. Riemann, J. Christen, M. Beer, J. Zweck, G. Moutchnik, M. Jetter;
EW MOVPE XI, 375-377 (2005)

Using paramagnetic particles as repulsive templates for the preparation of membranes of controlled porosity
P. Tierno, K. Thonke, W. A. Goedel;
Langmuir 21, 9476 (2005)

Nanostructures From ZnO And Other Semiconductors Generated Via Self-Organizing Polymers
K. Thonke
(invited) Proceedings of the 27th Int. Conf. on the Physics of Semiconductors, Flagstaff (2004), AIP Conference proceedings, 772, 831 (2005)

Effect of annealing on the depth profile of hole concentration in (Ga,Mn)As
W. Limmer, A. Koeder, S. Frank, V. Avrutin, W. Schoch, R. Sauer, K. Zuern, P. Ziemann, E. Peiner, A. Waag;
Physical Review B 71, 205213 (2005) >

Growth of GaMnAs under near-stoichiometric conditions
V. Avrutin, D. Humienik, S. Frank, A. Koeder, W. Schoch, W. Limmer, R. Sauer, A. Waag;
Journal of Applied Physics 98, 023909 (2005)

Time-resolved spectroscpy of the violet luminescence of undoped AlN
R. Freitag, K. Thonke, R. Sauer, D.G. Ebling, L. Steinke;
Materials Research Society (MRS) Internet Journal of Nitride Semiconductor Research Vol.10, Art. 3 (2005)

Excitonic Properties of ZnO
C. Klingshirn, H. Priller, M. Decker, J. Brückner, H. Kalt, R. Hauschild, J. Zeller, A. Waag, A. Bakin, H. Wehmann, K. Thonke, R. Sauer, R. Kling, F. Reuss, C. Kirchner;
Advances in Solid State Physics 45, 275 (2005)

Photoconductivity spectra of bulk ZnO