Jan-Patrick Scholz, M.Sc.

Research Staff Member


Jan-Patrick Scholz

Institute of Functional Nanosystems
Albert-Einstein-Allee 45
89081 Ulm
Room: 45.2.224
Phone: +49 (0) 731 50-26044
Telefax: +49 (0) 731 50-26049

Investigations and growth of GaN-based field effect transistors

Transistors are currently installed in almost every electrical device. The trend of semiconductor development is towards ever faster switching times, ever higher performance and ever smaller component sizes. For example, in the charging control of electric cars, high power density transistors are needed, but at high powers, the losses of conventional two-dimensional transistors increase sharply. One possible approach is to spatially separate the source and drain contacts in a third dimension. This results in a vertical transistor, e.g. the CAVFET structure.

As part of these studies, bachelor and master thesis topics are regularly awarded. If interested or for more information mail to Jan-Patrick Scholz or Ferdinand Scholz.