GaN-Group

The GaN group is working on the fabrication and characterization of group-(III) nitrides, especially on the growth of thick GaN layers by HVPE, the epitaxy of semi- and nonpolar heterostructures by MOVPE and the realization of light emitting diodes (LEDs) as well as Laserdiodes from the UV until green spectal range.

Current fields of research

 

Members

Group leader:

 Prof. Dr. Ferdinand Scholz

Technicians:

Ilona Schwaiger (momentarily in maternal leave)
Thomas Zwosta

Research Assistants:

Oliver Rettig
Martin Schneidereit
Jan-Patrick Scholz
Jassim Bin Shahbaz