The GaN group is working on the fabrication and characterization of group-(III) nitrides, especially on the growth of thick GaN layers by HVPE, the epitaxy of semi- and nonpolar heterostructures by MOVPE and the realization of light emitting diodes (LEDs) as well as Laserdiodes from the UV until green spectal range.

Current fields of research



Group leader:

 Prof. Dr. Ferdinand Scholz


Ilona Schwaiger (momentarily in maternal leave)
Thomas Zwosta

Research Assistants:

Oliver Rettig
Martin Schneidereit
Jan-Patrick Scholz
Jassim Bin Shahbaz