• U. Haboeck, A. Kaschner, A. Hoffmann, C. Thomson, T. Riemann, A. Krost, M. Seyboth, F. Habel;
  Correlation of Surface Potential, Free Carrier Concentration and Light Emission in ELO GaN Growth Domains
  phys. stat. sol. (b) 234(3), pp. 911-914 (2002)
  
  
• D. Mistele, T. Rotter, K.S. Röver, S. Paprotta, M. Seyboth, V. Schwegler, F. Fedler, H. Klausing, O.K. Semchinova, J. Stemmer, J. Aderhold, J. Graul;
  First AlGaN/GaN MOSFET with Photoanodic Gate Dielectric
  Mat. Sci. Eng. B 93, pp. 107-111 (2002)
  

• D. Mistele, T. Rotter, Z. Bougrioua, I. Moermann, K.S. Röver, M. Seyboth, V. Schwegler, J. Stemmer, F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul;
  AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatment
  Mat. Res. Soc. Proc. 693, pp. I6.51.1-I6.51.6 (2002) (link)
  

• T. Rotter, D. Mistele, F. Fedler, H. Klausing, O.K. Semchinova, J. Stemmer, J. Aderhold, J. Graul, K.S. Röver, S. Paprotta, M. Seyboth, V. Schwegler;
  Temperature Stable MOSFET Based on AlGaN/GaN Heterostructures with Photoanodically Grown Gate Oxide
  accepted for publication in HITEN (High Temperature Electronics Network) Proc. (2002)

• M. Seyboth, S.-S. Schad, M. Scherer, F. Habel, C. Eichler, M. Kamp, V. Schwegler;
  Substrates for Wide Bandgap Nitrides
  J. Mater. Sci: Mater. in Electr. 13 (11), pp. 659-664 (2002) (link)

• M. Scherer, B. Neubert, S.S. Schad, W. Schmid, C. Karnutsch, W. Wegleiter, A. Ploessl, K. P. Streubel;
  Efficient InAlGaP light-emitting diodes using radial outcoupling taper;
  SPIE-Int. Soc. Opt. Eng. Proceedings of Spie - the International Society for Optical Engineering, vol.4641, 2002, pp. 31-41; USA
  
  
• W. Schmid, M. Scherer, C. Karnutsch, A. Plossl, W. Wegleiter, S. S. Schad, B. Neubert, K. Streubel;
  High-efficiency red and infrared light-emitting diodes using radial outcoupling taper
  IEEE Journal of Selected Topics in Quantum Electronics 8 (2002) pp. 256-63 (link)