• H.Y.A. Chung, A. Pelzmann, M. Drechsler, M. Scherer, V. Schwegler, M. Seyboth, F. Eberhard, C. Kirchner, M. Kamp, K.J. Ebeling;
  Multiple-Step Annealing for 50% enhanced p-conductivity of GaN
  J. Crystal Growth 230(3-4), (2001).
  
  
• T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, C. Thomsen, M. Seyboth, F. Habel, R. Beccard, M. Heuken;
  Three-Dimensional Imaging of ELOG Growth Domains by Scanning Cathodoluminescence Tomography
  phys. stat. sol. (a) 188(2), 751-755 (2001).
  
  
• S.S. Schad, M. Scherer, M. Seyboth, V. Schwegler;
  Extraction Efficiency of GaN-based LEDs
  phys. stat. sol. (a) 188(1), 127-130 (2001).
  
  
• M. Scherer, V. Schwegler, M. Seyboth, C. Kirchner, M. Kamp, A. Pelzmann, M. Drechsler;
  Low resistive p-type GaN using two-step rapid thermal annealing processes
  J. Appl. Phys. 89(12), 8339-8341 (2001). (link)
  
  
• M. Scherer, V. Schwegler, M. Seyboth, F. Eberhard, C. Kirchner, M. Kamp, G. Ulu, M.S. Ünlü, R. Gruhler, O. Hollricher;
  Characterization of Etched Facets for GaN-based Lasers
  J. Crystal Growth 230(3-4), 554-557 (2001). (link)

• V. Schwegler, S.S. Schad, M. Scherer, M. Kamp, G. Ulu, M. Emsley, M.S. Ünlü A. Lell, S. Bader, B. Hahn, H.J. Lugauer, F. Kühn, A. Weimar, V. Härle;
  Mirror Reflectivity Influence on the L-I Characteristics of Cleaved GaN/SiC Lasers
  J. Crystal Growth 230(3-4), 512-516 (2001). (link)
  

• K. Thonke, K. Kornitzer, M. Grehl, R. Sauer, C. Kirchner, V. Schwegler, M. Kamp, M. Leszczynski, I. Grzegory, S. Porowski;
  High-Resolution Polariton spectra of homoepitaxial GaN: Temperature dependence
  IPAP Conf. Series 1, 587-590 (2001) (link)
  

• C. Wang, H.Y.A. Chung, M. Seyboth, M. Kamp, K.J. Ebeling, R. Beccard, M. Heuken;
  Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy
  J. Crystal Growth 230 (3-4), 377-380 (2001). (link)