• C. Eichler, S.-S. Schad, F. Scholz, D. Hofstetter, S. Miller, A. Weimar, A. Lell, V. Härle;
  Observation of Temperature-Independent Longitudinal-Mode Patterns in Violet-Blue InGaN-Based Laser Diodes
  IEEE Photonics Technol. Letters 17 (2005) pp. 1782-1784 (link)
  
  
• F. Habel, P. Brückner, J-D. Tsay, W.-Y. Liu, F. Scholz, D. Schmitz, M. Heuken,
  Hydride vapor phase epitaxial growth of thick GaN layers with improved surface flatnes
  Proc. IWN 2004, phys. stat. sol. (c) 2 (7) pp. 2049-2052 (2005) (link)

• B. Neubert, F. Habel, P. Brückner, F. Scholz, T. Riemann, J. Christen;
  Electroluminescence from GaInN quantum wells grown on non-(0001) facets of selectively grown GaN stripes
  Proc. MRS Fall Meeting Boston Dec. 2004; Mat. Res. Proc. Vol. 831 (2005) E11.32.1
  

• B. Neubert, P. Brückner, F. Habel, F. Scholz, T. Riemann, J. Christen, M. Beer, J. Zweck;
  GaInN quantum wells grown on facets of selectively grown GaN stripes
  Appl. Phys. Lett. 87 (2005) 182111 (link)
  
  
• E. Richter, Ch. Hennig, M. Weyers, F. Habel, J.-D. Tsay, W.-Y. Liu, P. Brückner, F. Scholz, Yu. Makarov, A. Segal and J. Kaeppeler;
  Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE
  J. Crystal Growth 277 (2005) 6 (link)

• Ulrich T. Schwarz, Markus Pindl, Werner Wegscheider, Christoph Eichler, Ferdinand Scholz, Michael Furitsch, Andreas Leber, Stephan Miller, Alfred Lell, and Volker Härle;
  Near-field and far-field dynamics of AlInGaN laser diodes
  Appl. Phys. Lett. 86 (2005) 161112 (llink)
  
  
• Ferdinand Scholz, Peter Brückner, Frank Habel, Matthias Peter, Klaus Köhler;
  Improved GaN layer morphology by hydride vapor phase epitaxy on misoriented Al2O3 wafers
  Appl. Phys. Lett. 87 (2005) 181902 (link)