• P.L. Bonanno, S.M. O'Malley, A.A. Sirenko, A. Kazimirov, Z.-H. Cai, T. Wunderer, P. Brückner, F. Scholz;
  Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction
  Appl. Phys. Lett. 92 (2008) 123106-1-3. (link)
  
  
• M. Feneberg, F. Lipski, M. Schirra, R. Sauer, K.Thonke, T. Wunderer, P. Brückner, F. Scholz;
  High quantum efficiency of semipolar GaInN/GaN quantum wells
  phys. stat. sol. (c) 5 (2008) 2089–2091. (link)
  
  
• J. Hertkorn, F. Lipski, P. Brückner, T. Wunderer, S.B. Thapa, F. Scholz, A. Chuvilin, U. Kaiser, M. Beer, J. Zweck;
  Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited SiNx masks
  J. Crystal Growth 310 (2008) 4867–4870. (link)
  
  
• J. Hertkorn, P. Brückner, C. Gao, F. Scholz, A. Chuvilin, U. Kaiser, U. Wurstbauer, W. Wegscheider;
  Transport properties in n-type AlGaN/AlN/GaN superlattices
  phys. stat. sol. (c) 5 (2008) 1950-1952. (link)
  
  
• A.V. Lobanova, E.V. Yakovlev, R.A. Talalaev, S.B. Thapa, F. Scholz;
  Growth conditions and surface morphology of AlN MOVPE
  J. Crystal Growth 310 (2008) 4935-4938. (link)
  
  
• S.M. O’Malley, P.L. Bonanno, T. Wunderer, P. Brückner, B. Neubert, F. Scholz, A. Kazimirov, and A.A. Sirenko;
  X-ray diffraction studies of selective area grown InGaN/GaN multiple quantum wells on multi-facet GaN ridges
  phys. stat. sol. (c) 5 (2008) 1655–1658. (link)

• M. Prinz, R.A.R. Leute, M. Feneberg, K. Thonke, R. Sauer, O. Klein, J. Biskupek, U. Kaiser;
  Growth and studies of Si-doped AlN layers
  J. Crystal Growth 310 (2008) 4939–4941. (link)
  

• G.M. Prinz, M. Feneberg, M. Schirra, R. Sauer, K. Thonke, S.B. Thapa, F. Scholz;
  Silicon doping induced strain of AlN layers: A comparative luminescence and Raman study
  phys. stat. sol. (RRL) 2 (2008) 215-217. (link)
  

• B. Santic, F. Scholz;
  On the evaluation of optical parameters of a thin semiconductor film from transmission spectra, and application to GaN films
  Meas. Sci. Technol. 19 (2008) 105303. (link)
  
  
• S.B. Thapa, J. Hertkorn, T. Wunderer, F. Lipski, F. Scholz, A. Reiser, Y. Xie, M. Feneberg, K. Thonke, R. Sauer, M. Dürrschnabel, L.D. Yao, D. Gerthsen, H. Hochmuth, M. Lorenz, M. Grundmann;
  MOVPE growth of GaN around ZnO nanopillars
  J. Crystal Growth 310 (2008) 5139-5142. (link)
  
  
• S.B. Thapa, J. Hertkorn, F. Scholz, G.M. Prinz, M. Feneberg, M. Schirra, K. Thonke, R. Sauer, J. Biskupek, U. Kaiser;
  MOVPE growth of high quality AlN layers and effects of Si doping
  phys. stat. sol. (c) 5 (2008) 1774-1776. (link)

• T. Wunderer, F. Lipski, J. Hertkorn, P. Brückner, F. Scholz, M. Feneberg, M. Schirra, K. Thonke, A. Chuvilin, and U. Kaiser;
  Bluish-green semipolar GaInN/GaN light emitting diodes on {1-101} GaN side facets
  phys. stat. sol. (c) 5 (2008) 2059–2062. (link)
  

• T. Wunderer, J. Hertkorn, F. Lipski, P. Brückner, M. Feneberg, M. Schirra, K. Thonke, I. Knoke, E. Meissner, A. Chuvilin, U. Kaiser, F. Scholz;
  Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on (1-101) GaN side facets
  Gallium Nitride Materials and Devices III, ed. by H. Morkoc et al., Proc. of SPIE Vol. 6894 (2008) 68940V-1.(link)