Publications 2008
- P.L. Bonanno, S.M. O'Malley, A.A. Sirenko, A. Kazimirov, Z.-H. Cai, T. Wunderer, P. Brückner, F. Scholz;
Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction
Appl. Phys. Lett. 92 (2008) 123106-1-3. (link) - M. Feneberg, F. Lipski, M. Schirra, R. Sauer, K.Thonke, T. Wunderer, P. Brückner, F. Scholz;
High quantum efficiency of semipolar GaInN/GaN quantum wells
phys. stat. sol. (c) 5 (2008) 2089–2091. (link) - J. Hertkorn, F. Lipski, P. Brückner, T. Wunderer, S.B. Thapa, F. Scholz, A. Chuvilin, U. Kaiser, M. Beer, J. Zweck;
Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited SiNx masks
J. Crystal Growth 310 (2008) 4867–4870. (link) - J. Hertkorn, P. Brückner, C. Gao, F. Scholz, A. Chuvilin, U. Kaiser, U. Wurstbauer, W. Wegscheider;
Transport properties in n-type AlGaN/AlN/GaN superlattices
phys. stat. sol. (c) 5 (2008) 1950-1952. (link) - A.V. Lobanova, E.V. Yakovlev, R.A. Talalaev, S.B. Thapa, F. Scholz;
Growth conditions and surface morphology of AlN MOVPE
J. Crystal Growth 310 (2008) 4935-4938. (link) - S.M. O’Malley, P.L. Bonanno, T. Wunderer, P. Brückner, B. Neubert, F. Scholz, A. Kazimirov, and A.A. Sirenko;
X-ray diffraction studies of selective area grown InGaN/GaN multiple quantum wells on multi-facet GaN ridges
phys. stat. sol. (c) 5 (2008) 1655–1658. (link)
- M. Prinz, R.A.R. Leute, M. Feneberg, K. Thonke, R. Sauer, O. Klein, J. Biskupek, U. Kaiser;
Growth and studies of Si-doped AlN layers
J. Crystal Growth 310 (2008) 4939–4941. (link)
- G.M. Prinz, M. Feneberg, M. Schirra, R. Sauer, K. Thonke, S.B. Thapa, F. Scholz;
Silicon doping induced strain of AlN layers: A comparative luminescence and Raman study
phys. stat. sol. (RRL) 2 (2008) 215-217. (link)
- B. Santic, F. Scholz;
On the evaluation of optical parameters of a thin semiconductor film from transmission spectra, and application to GaN films
Meas. Sci. Technol. 19 (2008) 105303. (link) - S.B. Thapa, J. Hertkorn, T. Wunderer, F. Lipski, F. Scholz, A. Reiser, Y. Xie, M. Feneberg, K. Thonke, R. Sauer, M. Dürrschnabel, L.D. Yao, D. Gerthsen, H. Hochmuth, M. Lorenz, M. Grundmann;
MOVPE growth of GaN around ZnO nanopillars
J. Crystal Growth 310 (2008) 5139-5142. (link) - S.B. Thapa, J. Hertkorn, F. Scholz, G.M. Prinz, M. Feneberg, M. Schirra, K. Thonke, R. Sauer, J. Biskupek, U. Kaiser;
MOVPE growth of high quality AlN layers and effects of Si doping
phys. stat. sol. (c) 5 (2008) 1774-1776. (link)
- T. Wunderer, F. Lipski, J. Hertkorn, P. Brückner, F. Scholz, M. Feneberg, M. Schirra, K. Thonke, A. Chuvilin, and U. Kaiser;
Bluish-green semipolar GaInN/GaN light emitting diodes on {1-101} GaN side facets
phys. stat. sol. (c) 5 (2008) 2059–2062. (link)
- T. Wunderer, J. Hertkorn, F. Lipski, P. Brückner, M. Feneberg, M. Schirra, K. Thonke, I. Knoke, E. Meissner, A. Chuvilin, U. Kaiser, F. Scholz;
Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on (1-101) GaN side facets
Gallium Nitride Materials and Devices III, ed. by H. Morkoc et al., Proc. of SPIE Vol. 6894 (2008) 68940V-1.(link)