Publications 2010
- F. Lipski, T. Wunderer, S. Schwaiger, and F. Scholz
Fabrication of freestanding 2-GaN wafers by hydride vapour phase epitaxy and self-separation during cooldown
Phys. Status Solidi (a) 207 (2010) pp. 1287–1291. (link) - F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen;
GaInN-based LED structures on selectively grown semi-polar crystal facets
Phys. Status Solidi (a) 207 (2010) pp. 1407-1413. (link) - S. Schwaiger, I. Argut, T. Wunderer, R. Rösch, F. Lipski, J. Biskupek, U. Kaiser, and F. Scholz;
Planar semipolar (10-11) GaN on (11-23) sapphire
Appl. Phys. Lett. 96 (2010) pp. 231905. (link) - S. Schwaiger, F. Lipski, T. Wunderer, and F. Scholz
Influence of slight misorientations of r-plane sapphire substrates on the growth of nonpolar a-plane GaN layers via HVPE
Phys. Status Solidi (c) 7 (2010) pp. 2069-2072. (link) - T. Wunderer, J. Wang, F. Lipski, S. Schwaiger, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, S. S. Shirokov, A. E. Yunovich, and F. Scholz;
Semipolar GaInN/GaN light-emitting diodes grown on honeycomb patterned substrates
Phys. Status Solidi (c) 7 (2010) pp. 2140–2143. (link) - M. Barchuk, V. Holý, B. Miljević, B. Krause, T. Baumbach, J. Hertkorn, and F. Scholz
X-ray diffuse scattering from threading dislocations in epitaxial GaN layers
J. Appl. Phys. 108 (2010) pp. 043521. (link) - M. Feneberg, K. Thonke, T. Wunderer, F. Lipski, and F. Scholz;
Piezoelectric polarization of semipolar and polar GaInN quantum wells grown on strained GaN templates
J. Appl. Phys. 107 (2010) pp. 103517. (link) - K. J. Fujan, M. Feneberg, B. Neuschl, T. Meisch, I. Tischer, K. Thonke, S. Schwaiger, I. Izadi, F. Scholz, L. Lechner, J. Biskupek, and U. Kaiser
Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets
Appl. Phys. Lett. 97 (2010) pp. 101904. (link) - O. Klein, J. Biskupek, U. Kaiser, K. Forghani, S. B. Thapa, and F. Scholz;
Simulation supported analysis of the effect of SiNx interlayers in AlGaN on the dislocation density reduction
J. Phys.: Conf. Ser. 209 (2010) pp. 012018. (link) - Daniel Kueck, Jochen Scharpf, Wolfgang Ebert, Mohamed Fikry, Ferdinand Scholz, and Erhard Kohn
Passivation of H-terminated diamond with MOCVD-aluminium nitride – a key to understand and stabilize its surface conductivity
Phys. Status Solidi (a) 207 (2010) pp. 2035–2039. (link)