Publications 2011

  • M. Fikry, M. Madel, I. Tischer, K. Thonke and F. Scholz;
    Luminescence properties of epitaxially grown GaN and InGaN layers around ZnO nanopillars
    Phys. Status Solidi A 208 (2011) pp. 1582-1585 (link)

  • K. Forghani, M. Klein, F. Lipski, S. Schwaiger, J. Hertkorn, R.A.R. Leute, F.Scholz, M. Feneberg, B. Neuschl, K. Thonke, O. Klein, U. Kaiser, R. Gutt and T. Passow;
    High quality AIGaN epilayers grown on sapphire using SINx interlayers
    Journal of Crystal Growth 315 (2011) pp. 216-219 (link)

  • K. Forghani, M. Gharavipour, M. Klein, F. Scholz, O. Klein, U. Kaiser,
    M. Feneberg, B. Neuschl and K. Thonke;
    In-situ deposited SiNχ nanomask for crystal quality improvement in AlGaN
    Phys. Status Solidi C 8 (2011) pp. 2063-2065 (link)

  • S. Schwaiger, S. Metzner, T. Wunderer, I. Argut, J. Thalmair, F. Lipski, M. Wieneke, J. Bläsing, F. Bertram, J. Zweck, A. Krost, J. Christen and F. Scholz;
    Growth and coalescence behavior of semipolar (1122) GaN on pre-structured r-plane sapphire substrates
    Phys. Stat. Solidi B 248, No. 3 (2011) pp. 588-593 (link)

  • B. Westenfelder, J. C. Meyer, J. Biskupek, G. Algara-Siller, L. G. Lechner, J. Kusterer, U. Kaiser, C. E. Krill III, E. Kohn and F. Scholz;
    Graphene-based sample supports for in situ high-resolution TEM electrical investigations
    J. Phys. D: Appl. Phys. 44 (2011) pp. 055502  (7pp) (link)

  • B. Westenfelder, J. C. Meyer, J. Biskupek, S. Kurasch,  F. Scholz, C. E. Krill III, and U. Kaiser;
    Transformations of Carbon Adsorbates on Graphene Substrates under Extreme Heat
    Nano Lett. 11 (2011) pp. 5123–5127 (link)

  • T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R.A.R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter and F. Scholz;
    Three-dimensional GaN for semipolar light emitters
    Phys. Status Solidi b 248, No. 3 (2011) pp. 549-560 (link)

  • R. Aleksiejunas, L. Lubys, M. Vengris, K. Jarasiunas, T. Wernicke, V. Hoffmann, C. Netzel, A. Knauer, M. Weyers and M. Kneissl;
    Study of excess carrier dynamics in polar, semipolar and non-polar InGaN epilayers and QWs
    Phys. Status Solidi C 8, pp. 2154-2156 (2011) (link)

  • M. Barchuk, V. Holý, D. Kriegner, J. Stangl, S. Schwaiger, F. Scholz;
    Diffuse x-ray scattering from stacking faults in a-plane GaN epitaxial layers
    Phys. Rev. B 84 (2011) pp. 094113-1--094113-8 (link)

  • R. Gutt, T. Passow, W. Pletschen, M. Kunzer, L. Kirste, K. Forghani,
    F. Scholz, O. Klein, U. Kaiser, K. Köhler and J. Wagner;
    Efficient 350 nm LEDs on low edge threading dislocation density AIGaN buffer layers
    In Light-emitting diodes: Materials, devices, and applications for solid state lighting
    K. P. Streubel (Ed.)
    Proc. SPIE 7954 (2011) pp. 79540Q-1--79540Q-8 (link)

  • H. Jönen, U. Rossow, H. Bremers, L. Hoffmann, M. Brendel, A. D. Dräger, S. Schwaiger, F. Scholz, J. Thalmair, J. Zweck, and A. Hangleiter;
    Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells
    Appl. Phys. Lett.  99 (2011) pp. 011901 (link)

  • H. Jönen, U. Rossow, H. Bremers, L. Hoffmann, M. Brendel, A.D. Dräger, S. Metzner, F. Bertram, J. Christen, S. Schwaiger, F. Scholz, J. Thalmair, J. Zweck and A. Hangleiter;
    Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces
    Phys. Status Solidi B 248 (2011) 600-604 (link)

  • O. Klein, J. Biskupek, K. Forghani, F. Scholz and U. Kaiser;
    TEM investigations on growth interrupted samples for the correlation of the dislocation propagation and growth mode variations in AIGaN deposited on SiNx interlayers
    J. Cryst. Growth 324 (2011) pp. 63-72 (link)

  • M. Kunzer, R. Gutt, L. Kirste, Th. Passow, K. Forghani, F. Scholz,
    K. Köhler and J. Wagner;
    Improved quantum efficiency of 350 nm LEDs grown on low dislocation density AlGaN buffer layers
    Phys. Status Solidi C No. 8 (2011) pp. 2363-2365 (link)

  • S. Metzner, F. Bertram, Ch. Karbaum, T. Hempel, T. Wunderer, S. Schwaiger, F. Lipski, F. Scholz, C. Wächter, M. Jetter, P. Michler and J. Christen;
    Spectrally and time-resolved cathodoluminescence microscopy of semipolar InGaN SQW on (1122) and (1011) pyramid facets
    Phys. Stat. Solidi B 248, No. 3 (2011) pp. 632-637 (link)

  • U. T. Schwarz, and F. Scholz; Rosige Aussichten für grünes Licht, Physik-Journal 10 (2011) Nr. 2 S. 21

  • I. Tischer, M. Feneberg, M. Schirra, H. Yacoub, R. Sauer, K. Thonke, T. Wunderer, F. Scholz, L. Dieterle, E. Müller, and D. Gerthsen;
    I2 basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band
    Phys. Rev. B 83 (2011) pp. 035314-1--6  (link)