• M. Fikry, Z. Ren, M. Madel, I. Tischer, K. Thonke and F. Scholz;
  Coaxial InGaN epitaxy around GaN micro-tubes: Tracing the signs
  Journal of Crystal Growth 370 (2013) 319 - 322 (link)
  
  
• D. Heinz, R.A.R. Leute, S. Kizir, Y. Li, T. Meisch, K. Thonke, F. Scholz;
  Ga(In)N photonic crystal light emitters with semipolar quantum wells
  Japanese Journal of Applied Physics 52 (2013) 062101 - 062106 (link)
  
  
• M. Klein, and F. Scholz;
  Molybdenum as local growth inhibitor in ammonia based epitaxy processes
  Phys. Status Solid C 10, No. 3 (2013) 396 - 399 (link)
  
  
• R.A.R. Leute , D. Heinz , J. Wanga, F. Lipski , T. Meisch , K. Thonke,
  J. Thalmair , J. Zweck and F. Scholz;
  GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures
  Journal of Crystal Growth 370 (2013) 101–104 (link)
  
  
• R. A. R. Leute, T. Meisch, J. Wang, J. Biskupek, U. Kaiser, M. Muller,
  P. Veit, F. Bertram, J. Christen and F. Scholz;
  GaN laser structure with semipolar quantum wells and embedded nanostripes
  Conference on Lasers and Electro-Optics\ Pacic Rim (CLEO-PR), (2013)
   
• F. Scholz, K. Forghani, M. Klein, O. Klein, U. Kaiser, B. Neuschl, I. Tischer, M. Feneberg, K. Thonke, S. Lazarev, S. Bauer, T. Baumbach;
  Studies on defect reduction in AlGaN hetero-structures
  Japanese Journal of Applied Physics 52 (2013) 08JJ07-08JJ10 (link)
  
  
• J. Wang, D. Zhang, R.A.R. Leute, T. Meisch, D. Heinz, I. Tischer, M. Hocker, K. Thonke, and F. Scholz;
  InGaN/GaN based semipolar green converters
  Journal of Crystal Growth 370 (2013) 120 - 123 (link)
  
  
• S.Lazarev, S. Bauer, K. Forghani, M. Barchuk, F. Scholz, and T. Baumbach;
  High resolution synchrotron X-ray studies of phase separation phenomena and the scaling law for the threading dislocation densities reduction in high quality AlGaN heterostructure
  Journal of Crystal Growth 370 (2013) 51 - 56 (link)
  
  
• S. Lazarev, M. Barchuk, S. Bauer, K. Forghani, V. Holý, F. Scholz, and T. Baumbach;
  Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system
  Journal of Appl. Cryst. 46 (2013) 120 - 127 (link)
  
  
• Th. Passow, R. Gutt, M. Kunzer, W. Pletschen, L. Kirste, K. Forghani, F. Scholz, K. Köhler and J. Wagner;
  High power efficiency AlGaN-based ultraviolet light-emitting diodes
  Japanese Journal of Applied Physics 52 (2013) 08JG16- 1 - 08JG16-4 (link)
  
  
• I. Tischer, M. Hocker, M. Fikry, M. Madel, M. Schied, Z. Ren, F. Scholz and K. Thonke;
  Optical Properties of ZnO/GaN/InGaN Core-Shell Nanorods
  Japanese Journal of Applied Physics 52 (2013) 075201-075205 (link)