Publications 2016

M. Caliebe, Y. Han, M. Hocker, T. Meisch, C. Humphreys, K. Thonke and F. Scholz;
Growth and coalescence studies of (1122) oriented GaN on pre-structured sapphire substrates using marker layers
Phy.Status Solidi B 253 (2016) No. 1 pp. 46-53 (link)
M. Caliebe, S. Tandukar, Z. Cheng , M. Hocker , Y. Han, T. Meisch, D. Heinz, F. Huber, S.Bauer, A.Plettl, C. Humphreys, K. Thonke, F. Scholz;
Influence of trench period and depth on MOVPE grown (1122)GaN on patterned r-plane sapphire substrates
Journal of CrystalGrowth 440 (2016) pp. 69–75 (link)
R.A.R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kneissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke and F. Scholz;
Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells
Phys.Status Solidi B 253 (2016) No. 1, pp. 180-185 (link)
T. Meisch, R. Zeller, S. Schörner, K. Thonke, L. Kirste, T. Fuchs and F. Scholz;
Doping behavior of (1122) GaN grown on patterned sapphire substrates
Phys. Status Solidi B 253 (2016), No. 1 pp. 164-168 (link)
F. Scholz, J. Koch, A. Frey, and A. C. Jones;
Organometallic Source Materials for III–V Epitaxy.
In: Saleem Hashmi (editor-in-chief), Reference Module in Materials Science and Materials Engineering. Oxford: Elsevier; 2016. pp. 1-6.
F. Scholz, T. Meisch and K. Elkhouly;
Efficiency studies on semipolar GaInN-GaN quantum well structures
Phys.Status Solidi A 213 (2016) pp. 3117-3121 (link)
F. Scholz, M. Caliebe, G. Gahramanova, D. Heinz, M. Klein, R.A.R. Leute, T. Meisch, J. Wang, M. Hocker and K. Thonke;
Semipolar GaN-based heterostructures on foreign substrates
Phys.Status Solidi B 253 (2016) No.1 pp 13-22 (link)

J. Wang, T. Meisch, D. Heinz, R. Zeller and F. Scholz;
Internal quantum efficiency and carrier injection efficiency of c-plane, (1011) and (1122) InGaN/GaN-based light-emitting diodes
Phys. Status Solidi B 253 (2016) No. 1, pp. 174-179 (link)
T. Aschenbrenner, M. Schowalter, T. Mehrtens, K. Müller-Caspary, M. Fikry, D. Heinz, I. Tischer, M. Madel, K. Thonke, D. Hommel, F. Scholz and A. Rosenauer;
Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy
Journal of Applied Physics 119 (2016) pp. 175701-1--6 (link)
E.R. Buß, P. Horenburg, U.Rossow, H. Bremers, T. Meisch, M. Caliebe, F. Scholz and A. Hangleiter;
Non- and semipolar AllnN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices
Phys.Status Solidi B 253 (2016) No. 1 pp. 84-92 (link)
Brian Corbett, Liverios Lymperakis, Ferdinand Scholz, Colin Humphreys, Frank Brunner, and Tobias Meyer;
Scalable semipolar gallium nitride templates for high-speed LEDs
SPIE News Room 2016, DOI 10.1117/2.1201605.006482 (link)
B. Corbett, Z. Quan, D. V. Dinh, G. Kozlowski, D. O`Mahony, M. Akhter,
S. Schulz, P. Parbrook, P. Maaskant, M. Caliebe, M. Hocker, K. Thonke, F. Scholz, M. Pristovsek, Y. Han, C. J. Humphreys, F. Brunner, M. Weyers, T. M. Meyer and L. Lymperakis;
Development of semipolar (11-22)LEDs on GaN templates
Heonsu Jeon (Ed.)
Proc. SPIE 9768 (2016) pp. 97681G-1--97681G-9 (link)
Y. Han, M. Caliebe, F. Hage, Q. Ramase, M. Pristovsek, T. Zhu, F. Scholz and C. Humphreys;
Toward defect-free semi-polar GaN templates on pre-structured sapphire
Phys. Status Solidi B 253 (2016) pp. 834-839 (link)
M. Hocker, I. Tischer, B. Neuschl, K. Thonke, M. Caliebe. M. Klein and F. Scholz;
Stacking fault emission in GaN: Influence of n-type doping
Journal of Applied Physics 119 (2016) pp. 185703-1--6 (link)
M. Knab, M. Hocker, T. Felser, I. Tischer, J. Wang, F. Scholz and K. Thonke;
EBIC investigations on polar and semipolar InGaN LED structures
Phys.Status Solidi B 253 (2016) No. 1, pp. 126-132 (link)
T. Langer, M. Klisch, F.A. Ketzer, H. Jönen, H. Bremers, U. Rossow, T. Meisch, F. Scholz and A. Hangleiter;
Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells
Phys.Status Solidi B 253 (2016) No. 1, pp. 133-139 (link)