Publications on High-Power VCSELs (since 1995)

  • I. Kardosh, M. Riedl, and F. Rinaldi, "Characterization of strain-compensated 980 nm bottom-emitting VCSELs", Annual Report 2006 (215K).

  • I. Kardosh, F. Rinaldi, J. Hertkorn, and R. Michalzik, "Beam properties and M² measurements of high-power VCSELs", in Proc. Semiconductor and Integrated Optoelectronics Conf., SIOE 2005, paper 33. Cardiff, Wales, UK, March 2005.

  • R. Michalzik, "High-power semiconductor lasers" (invited), in Proc. XXV Conf. on Solid State Physics and Materials Science of the Egyptian Materials Research Society, Eg-MRS 2005 & Workshop on Photonic Materials and Optoelectronic Devices (II), pp. 55−56. Luxor, Egypt, March 2005.

  • J.M. Ostermann, P. Debernardi, and R. Michalzik, "Shallow surface gratings for high-power VCSELs with one preferred polarization for all modes", IEEE Photon. Technol. Lett., vol. 17, pp. 1593−1595, 2005.

  • I. Kardosh and F. Rinaldi, "Fabrication and characterization of 980 nm bottom-emitting VCSELs", Annual Report 2005 (98K).

  • J.M. Ostermann and P. Debernardi, "Shallow surface gratings for high-power VCSELs with one preferred polarization for all modes", Annual Report 2004 (320K).
  • I. Kardosh and F. Rinaldi, "Beam properties and M² measurements of high-power VCSELs", Annual Report 2004 (102K).
  • C. Angelos, S. Hinckley, R. Michalzik, and V. Voignier, "Simulation of current spreading in bottom-emitting vertical cavity surface emitting lasers for high power operation", in Photonics: Design, Technology, and Packaging, C. Jagadish, K.D. Choquette, B.J. Eggleton, B.D. Nener and K.A. Nugent (Eds.), Proc. SPIE 5277, pp. 261−272, 2003.

  • I. Kardosh and V. Voignier, "Vertical-extended-cavity surface-emitting lasers", Annual Report 2002 (165K).

  • M. Miller and I. Kardosh, "Improved output performance of high-power VCSELs", Annual Report 2001 (640K).

  • M. Miller, M. Grabherr, R. King, R. Jäger, R. Michalzik, and K.J. Ebeling, "Improved output performance of high-power VCSELs", IEEE J. Selected Topics Quantum Electron., vol. 7, pp. 210−216, 2001.

  • M. Miller, "Improved output performance of high-power VCSELs", Annual Report 2000 (282K).

  • M. Miller and M. Grabherr, "kW/cm 2 VCSEL arrays for high power applications", Annual Report 1999 (1016K).

  • M. Grabherr, M. Miller, R. Jäger, R. Michalzik, U. Martin, H. Unold, and K.J. Ebeling, "High-power VCSEL's: single devices and densely packed 2-D-arrays", IEEE J. Selected Topics Quantum Electron., vol. 5, pp. 495−502, 1999.

  • M. Miller and M. Grabherr, "High power 3z3 VCSEL array", Annual Report 1998 (481K).

  • M. Grabherr, M. Miller, and H.J. Unold, "Thermal crosstalk in densely packed high power VCSEL arrays", Annual Report 1998 (538K).

  • M. Grabherr, R. Jäger, M. Miller, C. Thalmaier, J. Heerlein, R. Michalzik, and K.J. Ebeling, "Bottom-emitting VCSEL's for high-cw optical output power", IEEE Photon. Technol. Lett., vol. 10, pp. 1061−1063, 1998.

  • R. Michalzik, M. Grabherr, R. Jäger, M. Miller, and K.J. Ebeling, "Progress in high-power VCSELs and arrays" (invited), in Optoelectronic Materials and Devices, M. Osinski and Y.-K. Su (Eds.), Proc. SPIE 3419, pp. 187−195, 1998.

  • R. Michalzik, M. Grabherr, and K.J. Ebeling, "High-power VCSELs: modeling and experimental characterization" (invited), in Vertical Cavity Surface Emitting Lasers II, R.A. Morgan and K.D. Choquette (Eds.), Proc. SPIE 3286, pp. 206−219, 1998.

  • M. Grabherr and M. Miller, "Bottom emitting VCSELs for high cw optical output power", Annual Report 1997 (321K).

  • R. Michalzik, K.J. Ebeling, M. Grabherr, D. Wiedenmann, R. Jäger, C. Jung, and B. Weigl, "High power and high efficiency GaAs based VCSELs" (invited), in Proc. IEEE Lasers and Electro-Opt. Soc. Ann. Meet., LEOS '97, vol. 2, p. 347. San Francisco, CA, USA, Nov. 1997.

  • M. Grabherr, "Broad-area high-power top surface emitting laser diodes", Annual Report 1996 (154K).

  • M. Grabherr, B. Weigl, G. Reiner, R. Michalzik, M. Miller, and K.J. Ebeling, "High power top-surface emitting oxide confined vertical-cavity laser diodes", Electron. Lett., vol. 32, pp. 1723−1724, 1996.