Solid state quantum information devices via deterministic implantation

We aim to implant single Atoms with nm precision into solids [1], for a future solid state quantum processor [2] and to improve classical nano electronic devices [3]. 

Ions are trapped in a special linear Paul trap, and Ca+ ions are optically imaged. Doping ions such as N+, Cr+, Ni+, P+ are loaded. We laser cool the ions to about 1mK Doppler temperature, then ions are extracted from the trap and will be focused into a substrate. According to our numerical simulations the accuracy of positioning will be a few nm. Our method joins the advantage of ultra high spatial accuracy with the fact that any ion species, even molecular ions will trapped, sympathetically cooled to mK temperatures and extracted.

With a success probability better than 90% we verify the single ion gun by shooting into a detector 25cm down-stream [5]. See the figure for the electrode structure of the trap which we use. We have also succeeded shooting ions through a nano aperture [4], which we are going to integrate in the ion trap design.

[1] J. Meijer, et al., "Concept of deterministic single ion doping with sub-nm spatial resolution, Appl. Phys. A 83, 321(2006).

[2] L. Childress,et al., Coherent Dynamics of Coupled Electron and Nuclear Spin Qubits in Diamond; Science 314 (5797), 281 (2006).

[3] T. Shinada et. al., Nature 437, 1128 (2005)

[4] J. Meijer,et al., "Towards the implanting of ions and nanoparticles with nm spatial resolution", Appl. Phys. A 91, 567–571 (2008).

[5] W. Schnitzler, et al., "Deterministic Ultracold Ion Source targeting the Heisenberg Limit", PRL 102, 070501 (2009).

We closely collaborate with the teams of Wrachtrup, Pfau (Uni Stuttgart) and Meijer (Uni Bochum). We thank the Landesstiftung Baden-Württemberg within the activity "atomics" for financial support.