Invited talks
- Bergunde T., Azurspace, Germany:
Production, development and perspectives of Azur's multijunction solar cells
Tuesday, June 8 - 09:00 - Creighton J. R., Sandia Labs, U.S.A.:
The impact of gas-phase and surface chemistry during group-III nitride MOVPE
Monday, June 7 - 14:30 - Decobert J., Alcatel-Thales III-V Lab, Marcoussis, France:
Selective Area Growth for Photonic Integrated Circuits
Monday, June 7 - 15:15 - Fukui T., Hokkaido Univ., Japan:
III-V semiconductor nanowires and core-shell nanowires and their device applications
Monday, June 7 - 09:30 - Hails J., QinetiQ, Malvern, UK:
p-type doping of narrow gap II-VI materials by MOVPE
Tuesday, June 8 - 09:45 - Leszczynski M., TopGaN Warsaw, Poland:
MOVPE and MBE in nitride laser-diode technology
Wednesday, June 9 - 09:45 - Lundin W., Ioffe St. Petersburg, Russia:
Optimization of III-N heterostructures growth by MOVPE via surface processes control
Monday, June 7 - 10:15 - Wang C., MIT Lincoln Lab, U.S.A.:
Strain-Compensated GaInAs/AlInAs/InP Quantum Cascade Lasers
Wednesday, June 9 - 09:00