Invited talks

  • Bergunde T., Azurspace, Germany:

    Production, development and perspectives of Azur's multijunction solar cells
    Tuesday, June 8  -   09:00

  • Creighton J. R., Sandia Labs, U.S.A.:
    The impact of gas-phase and surface chemistry during group-III nitride MOVPE
    Monday, June 7  -   14:30

  • Decobert J., Alcatel-Thales III-V Lab, Marcoussis, France:

    Selective Area Growth for Photonic Integrated Circuits
    Monday, June 7  -   15:15

  • Fukui T., Hokkaido Univ., Japan:

    III-V semiconductor nanowires and core-shell nanowires and their device applications
    Monday, June 7  -   09:30

  • Hails J., QinetiQ, Malvern, UK:

    p-type doping of narrow gap II-VI materials by MOVPE
    Tuesday, June 8  -   09:45

  • Leszczynski M., TopGaN Warsaw, Poland:

    MOVPE and MBE in nitride laser-diode technology
    Wednesday, June 9  -   09:45

  • Lundin W., Ioffe St. Petersburg, Russia:

    Optimization of III-N heterostructures growth by MOVPE via surface processes control
    Monday, June 7  -   10:15

  • Wang C., MIT Lincoln Lab, U.S.A.:

    Strain-Compensated GaInAs/AlInAs/InP Quantum Cascade Lasers
    Wednesday, June 9  -   09:00

Organization

Contact

  • EWMOVPE 2009
  • Institute of Optoelectronics
  • Albert-Einstein-Allee 45
  • 89081 Ulm
  • Tel:  +49 (0)731 50 26052
  • Fax: +49 (0)731 50 26049