Conference Contributions 2011
- Z. Andreev, F. Römer, and B. Witzigmann;
Simulation of InGaN Quantum well LEDs with reduced internal polarization
ICNS-9, Glasgow, United Kingdom 2011, talk. - F. Bertram, G. Schmidt, A. Dempewolf, S. Petzold, P. Veit, R. Ravash, A. Dadgar, A. Krost, and J. Christen;
Efficient termination of basal plane stacking faults by a low-temperature AlN interlayer in GaN on Si (211) substrate by (S) TEM-CL
ICNS-9, Glasgow, United Kingdom 2011, poster. - A. Dadgar, R. Ravash, P. Veit, G. Schmidt, M. Müller, A. Dempewolf, F. Bertram, J. Christen, and A. Krost;
Stacking fault elimination in semipolar GaN on Si(112) by LT-AlN interlayers
SIMC-16, Stockholm, Sweden 2011, talk.
- L. Groh, C. Hums, A. Dadgar, J. Bläsing, and A. Krost;
Properties of quaternary (Al,Ga,In)N layers and MQWs
DPG Spring Meeting, Dresden, Germany 2011, poster. - H. Jönen, H. Bremers, M. Brendel, A. Kruse, L. Hoffmann, U. Rossow, S. Schwaiger, F. Scholz, J. Thalmair, J. Zweck, and A. Hangleiter;
Indium incorporation in GaInN quantum wells on various surface orientations: A comparative study by X-ray diffraction and photoluminescence
ICNS-9, Glasgow, United Kingdom 2011, talk. - H. Jönen, U. Rossow, H. Bremers, S. Schwaiger, F. Scholz, S. Metzner, F. Bertram, J. Christen, and A. Hangleiter;
Indium incorporation in GaInN quantum wells on various surface orientations
DPG Spring Meeting, Dresden, Germany 2011, talk. - C. Karbaum, F. Bertram, S. Metzner, J. Christen, X. Ni, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoc;
Spatially resolved cathodoluminescence spectroscopy of InGaN/GaN heterostructures on m-plane GaN grown on patterned Si (112) substrates
DPG Spring Meeting, Dresden, Germany 2011, talk. - C. Karbaum, F. Bertram, S. Metzner, J. Christen, T. Wunderer, and F. Scholz;
Spectrally resolved cathodoluminescence microscopy of an In-GaN SQW on hexagonally inverted GaN pyramids
DPG Spring Meeting, Dresden, Germany 2011, talk. - M. Kneissl;
Indium incorporation and optical properties of light emitters on non- and semipolar GaN
E-MRS ICAM IUMRS 2011 Spring Meeting, Nice, France 2011, invited talk. - T. Langer, A. Kruse, M. Göthlich, H. Jönen, H. Bremers, U. Rossow, S. Schwaiger, F. Scholz, and A. Hangleiter;
Nonradiative recombination in long-wavelength polar, nonpolar, and semipolar GaInN/GaN quantum wells
ICNS-9, Glasgow, United Kingdom 2011, talk. - T. Langer, A. Kruse, M. Göthlich, H. Jönen, H. Bremers, U. Rossow, and A. Hangleiter;
Nonradiative recombination in polar and nonpolar GaInN/GaN quantum wells
E-MRS ICAM IUMRS 2011 Spring Meeting, Nice, France 2011, talk. - R.A.R. Leute, F. Lipski, K. Forghani, I. Tischer, K. Thonke, and F. Scholz;
Selective area growth of AlGaN for epitaxially realized waveguides of semipolar GaN based laser diodes
EWMOVPE XIV, Wroclav, Poland, 2011, poster. - R.A.R. Leute, F. Lipski, K. Forghani, F. Scholz, B. Witzigmann, I. Tischer, B. Neuschl, and K. Thonke;
Selective Epitaxy of 3D AlGaN/GaN Waveguides for Semipolar Laser structures
E-MRS ICAM IUMRS 2011 Spring Meeting, Nice, France 2011, talk. - R. Leute, K. Forghani, F. Lipski, F. Scholz, I. Tischer, B. Neuschl, and K. Thonke;
Growth of AlGaN stripes with semipolar side facets as waveguide
claddings for semipolar laser structures
DPG Spring Meeting, Dresden, Germany 2011, talk. - M. Lohr, J. Thalmaier, M. Jetter, F. Scholz, and J. Zweck;
Locally resolved imaging of internal electric fields in GaN/GaInN quantum wells by differential phase contrast microscopy
DPG Spring Meeting, Dresden, Germany 2011, poster. - F. Mehnke, J. Stellmach, M. Frentrup, G. Kusch, T. Wernicke, M. Pristovsek, and M. Kneissl;
MOVPE von semipolarem AlGaN auf (10-10) m-plane Saphir
DPG Spring Meeting, Dresden, Germany 2011, talk. - S. Metzner, S. Neugebauer, F. Bertram, T. Hempel, J. Christen, S. Schwaiger, I. Argut, T. Wunderer, F. Lipski, R. Rösch, and F. Scholz;
Cathodoluminescence microscopy of planar semipolar (11-22) and (10-11) GaN grown directly on pre-patterned sapphire substrates
SPIE Photonics West, San Francisco, CA, USA 2011, talk. - S. Metzner, F. Bertram, J. Christen, T. Wunderer, F. Lipski, S. Schwaiger, and F. Scholz;
Temperature dependent microscopic energy relaxation in semipolar
InGaN SQW imaged by spatio-time-resolved cathodoluminescence
spectroscopy
DPG Spring Meeting, Dresden, Germany 2011, talk. - M. Müller, A. Dempewolf, F. Bertram, T. Hempel, J. Christen, R. Ravash, A. Dadgar, and A. Krost;
Kathodolumineszenzuntersuchungen an GaN auf Si(211)- und SI(311)-Substraten
DPG Spring Meeting, Dresden, Germany 2011, talk. - S. Neugebauer, S. Metzner, F. Bertram, T. Hempel, J. Christen, S. Schwaiger, and F. Scholz;
Highly spatially and spectrally resolved cathodoluminescence microscopy of planar semipolar InGaN/GaN MQWs grown on pre-patterned sapphire substrate
DPG Spring Meeting, Dresden , Germany 2011, talk. - S. Ploch, J.B. Park, J. Stellmach, T. Schwaner, M. Frentrup, T. Wernicke, T. Niermann, M. Pristovsek, M. Lehmann, and M. Kneissl;
Single phase semipolar (11-22) GaN on (10-10) sapphire
DPG Spring Meeting, Dresden, Germany 2011, talk. - S. Ploch, T. Wernicke, J. Rass, M. Pristovsek, M. Weyers, M. Kneissl;
AlGaN, GaN and InGaN layers grown on semipolar (11-22),
(20-21), (10-11) and (0001) GaN for LED and laser structures
ISCS 2011, Berlin, Germany 2011, talk. - S. Ploch, T. Wernicke, J. Rass, M. Pristovsek, M. Weyers and M. Kneissl;
MOVPE growth of semipolar (20-21) AlGaN and InGaN layers and quantum wells for optically pumped laser structures
26. DGKK Workshop Epitaxie von III/V Halbleitern, Stuttgart, Germany 2011, vortrag. - S. Ploch, T. Wernicke, J. Rass, M. Pristovsek and M. Kneissl;
Investigation of morphology and strain in AlGaN and InGaN
layers grown on semipolar (20-21) GaN substrates
ICNS-9, Glasgow, United Kingdom 2011, poster. - J. Rass, M. Stascheit, S. Ploch, T. Wernicke, P. Vogt, and M. Kneissl;
Optoelectronical properties of InGaN quantum well light emitting diodes on semipolar GaN
DPG Spring Meeting, Dresden, Germany 2011, poster. - R. Ravash, J. Bläsing, P. Veit, T. Hempel, M. Müller, A. Dempewolf, F. Bertram, A. Dadgar, J. Christen, and A. Krost;
Reducing stacking faults in semi-polar GaN layers grown on planar Si (112) substrates
ICNS-9, Glasgow, United Kingdom 2011, poster.
- R. Ravash, J. Bläsing, T. Hempel, A. Dadgar, J. Christen, and A. Krost;
Semi-polar GaN heteroepitaxy an high index Si-surfaces
DPG Spring Meeting, Dresden, Germany 2011, talk.
- L. Schade, U. Schwarz, S. Ploch, T. Wernicke, A. Knauer, V. Hoffmann, M. Weyers, and M. Kneissl;
Polarisation of the spontaneous emission from nonpolar and semipolar InGaN quantum wells
DPG Spring Meeting, Dresden, Germany 2011, talk. - W. Scheibenzuber, U. Schwarz, T. Lermer, S. Lutgen, and U. Strauss;
Optical Gain, Thermal Resistance and Antiguiding Factor of GaN-based Laser Diodes from UV to Green
DPG Spring Meeting, Dresden, Germany 2011, talk. - F. Scholz;
Semipolar GaInN quantum well lstructures on large area substrates
ICNS-9, Glasgow, United Kingdom 2011, talk. - F. Scholz;
Semipolar GaInN quantum well structures on large area substrates
ISPLASMA 2011, Nagoya, Japan 2011, invited talk. - F. Scholz, T. Wunderer, S. Schwaiger, and R.A.R. Leute;
Workshop on Frontier Photonic and Electronic Materials and Devices
2011 German-Japanese-Spanish Joint Workshop, Granada, Spain 2011, invited talk. - U. Schwarz;
Optical gain of green (AI,In)GaN laser diodes
DPG Spring Meeting, Dresden, Germany 2011, invited talk. - T. Wernicke, J. Rass, L. Schade, W. Scheibenzuber, M. Brendel, S. Ploch, V. Hoffmann, C. Netzel, A. Hangleiter, U. Schwarz, M. Weyers, and M. Kneissl;
New growth directions for nitride based blue lasers and LEDs
ISSMD, Vadodara, Indien 2011, invited talk. - M. Wieneke, B. Bastek, M. Noltemeyer, T. Hempel, A. Rohrbeck, H. Witte, P. Veit, J. Bläsing, A. Dadgar, J. Christen, and A. Krost;
Influence of Si-doping on heteroepitaxially grown a-plane GaN
DPG Spring Meeting, Dresden, Germany 2011, talk.