• B. Bastek, O. August, T. Hempel, J. Christen, M. Wieneke, J. Blaesing, A. Dadgar, A. Krost and U. Wendt;
  Direct microscopic correlation of crystal orientation and luminescence in spontaneously formed nonpolar and semipolar GaN growth domains
  Appl. Phys. Lett. 96, 172102 (2010). (Link)
  
  
• C. Bocklin, R. G. Veprek, S. Steiger and B. Witzigmann;
  Computational study of an InGaN/GaN nanocolumn light-emitting diode
  Phys. Rev. B 81, 155306 (2010). (Link)

• J. Danhof, C. Vierheilig, U. T. Schwarz, T. Meyer, M. Peter and B. Hahn;
  Temperature-dependent photoluminescence measurements on a submicrometer length scale on green light emitting InGaN/GaN quantum wells
  phys. stat. sol. (b) (2010) published on-line first. (Link)
  
  
• M. Feneberg, K. Thonke, T. Wunderer, F. Lipski and F. Scholz;
  Piezoelectric polarization of semipolar and polar GaInN quantum wells grown on strained GaN templates
  J. Appl. Phys. 107, 103517 (2010). (Link).
  
  
• K. J. Fujan, M. Feneberg, B. Neuschl, T. Meisch, I. Tischer, K. Thonke, S. Schwaiger, I. Izadi, F. Scholz, L. Lechner, J. Biskupek and U. Kaiser;
  Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets
  Appl. Phys. Lett. 97, 101904 (2010). (Link)
  
  
• T. Langer, H. Jönen, D. Fuhrmann, U. Rossow and A. Hangleiter;
  Recombination of free excitons in polar and nonpolar nitride quantum wells
  J. Phys.: Conf. Ser. 210, 012056 (2010). (Link)
  
  
• T. Lermer, M. Schillgalies, A. Breidenassel, D. Queren, C. Eichler, A. Avramescu, J. Müller, W. Scheibenzuber, U. Schwarz, S. Lutgen and U. Strauss;
  Waveguide design of green InGaN laser diodes
  phys. stat. sol. (a) 207, 1328 (2010). (Link)
  
  
• C. Netzel, V. Hoffmann, T. Wernicke, A. Knauer and M. Weyers;
  Temperature and excitation power dependent photoluminescence intensity of GaInN quantum wells with varying charge carrier wave function overlap
  J. Appl. Phys. 107, 033510 (2010). (Link)
  
  
• C. Netzel, V. Hoffmann, T. Wernicke, A. Knauer, M. Weyers and M. Kneissl;
  Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN qunatum wells
  phys. stat. sol. (c) 7, 1872 (2010). (Link)
  
  
• S. Ploch, M. Frentrup, T. Wernicke, M. Pristovsek, M. Weyers and M. Kneissl;
  Orientation control of GaN {11―22} and {10―13} grown on {10―10} sapphire by metal-organic vapor phase epitaxy
  J. Cryst. Growth 312, 2171 (2010). (Link)
  
  
• J. Rass, T. Wernicke, W. G. Scheibenzuber, U. T. Schwarz, J. Kupec, B. Witzigmann, P. Vogt, S. Einfeldt, M. Weyers and M. Kneissl;
  Polarization of eigenmodes in laser diode waveguides on semipolar and nonpolar GaN
  physica status solidi (RRL) - Rapid Research Letters 4, 1 (2010). (Link)
  
  
• J. Rass, T. Wernicke, W. John, O. Krüger, P. Vogt, S. Einfeldt, M. Weyers and M. Kneissl;
  Facet formation for laser diodes on nonpolar and semipolar GaN
  phys. stat. sol. (a) 207, 1361 (2010). (Link)
  
  
• E. Sakalauskas, H. Behmenburg, C. Hums, P. Schley, G. Rossbach, C. Giesen, M. Heuken, H. Kalisch, R. H. Jansen, J. Blaesing, A. Dadgar, A. Krost and R. Goldhahn;
  Dielectric function and optical properties of AI-rich AIInN alloys pseudomorphically grown on GaN
  J. Appl. Phys. 43, 365102 (2010). (Link)
  
  
• W. Scheibenzuber, U. Schwarz, R. Veprek, B. Witzigmann and A. Hangleiter;
  Optical anisotropy in semipolar AI, In GaN laser waveguides
  phys. stat. sol. (c) 7, 1925 (2010). (Link)
  
  
• W. G. Scheibenzuber, U. T. Schwarz, T. Lermer, S. Lutgen and U. Strauss;
  Antiguiding factor of GaN-based laser diodeds from UV to green
  Appl. Phys. Lett. 97, 021102 (2010). (Link)
  
  
• S. Schwaiger, I. Argut, T. Wunderer, R. Rösch, F. Lipski, J. Biskupek, U. Kaiser and F. Scholz;
  Planar semipolar {10―11}GaN on {11―23} sapphire
  Appl. Phys. Lett. 96, 231905 (2010). (Link)