Journal Publications 2011
- Z. Andreev, F. Römer, and B. Witzigmann;
Simulation of InGaN Quantum well LEDs with reduced internal polarization
Phys. Status Solidi A, (2011). accepted - H. Bremers, A. Schwiegel, L. Hoffmann, H. Jönen, U. Rossow, J. Thalmair, J. Zweck, and A. Hangleiter;
X-ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures
Phys. Status Solidi B 248, No. 3 (2011) 616-621. (link) - A. Dadgar, R. Ravash, P. Veit, G. Schmidt, M. Müller, A. Dempewolf, F. Bertram, M. Wieneke, J. Christen, and A. Krost;
Eliminating stacking faults in semi-polar GaN by AlN interlayers
Appl. Phys. Lett. 99 (2), (2011) 021905. (link) - M. Frentrup, S. Ploch, M. Pristovsek and M. Kneissl;
Crystal orientation of GaN layers on {10-10} m-plane Sapphire
Phys. Status Solidi B 248, No. 3 (2011) 583-587. (link) - L. Groh, C. Hums, J. Bläsing, A. Krost, and A. Dadgar;
Characterization of AlGaInN layers using X-ray diffraction and fluorescence
Phys. Status Solidi B 248, No. 3 (2011) 622-626. (link) - H. Jönen, U. Rossow, H. Bremers, L. Hoffmann, M. Brendel, A.D.Dräger, S. Schwaiger, F. Scholz, J. Thalmair, J. Zweck, and A. Hangleiter;
Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells
Appl. Phys. Lett. 99 (1), (2011) 011901. (link) - H. Jönen, U. Rossow, H. Bremers, L. Hoffmann, M. Brendel, A.D. Dräger, S. Metzner, F. Bertram, J. Christen, S. Schwaiger, F. Scholz, J. Thalmair, J. Zweck and A. Hangleiter;
Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces
Phys. Status Solidi B 248, No. 3 (2011) 600-604. (Link) - S. Metzner, F. Bertram, C. Karbaum, T. Hempel, T. Wunderer, S. Schwaiger, F. Lipski, F. Scholz, C. Wächter, M. Jetter, P. Michler, and J. Christen;
Spectrally and time-resolved cathodoluminescence microscopy of semipolar InGaN SQW on (1122) and (1011) pyramid facets
Phys. Status Solidi B 248, No. 3 (2011) 632-637. (link) - S. Ploch, J.B. Park, J. Stellmach, T. Schwaner, M. Frentrup, T. Niermann, T. Wernicke, M. Pristovsek, M. Lehmann, and M. Kneissl;
Single phase {11-22} GaN on (10-10) sapphire grown by metal-organic vapor phase epitaxy
J. Cryst. Growth 331, (2011) 25-28. (link) - J. Rass, T. Wernicke, S. Ploch, M. Brendel, A. Kruse, A. Hangleiter, W. Scheibenzuber, U.T. Schwarz, M. Weyers, and M. Kneissl;
Polarization dependent study of gain anisotropy in semipolar InGaN lasers
Appl. Phys. Lett. 99, (2011) 171105. (link)
- R. Ravash, J. Bläsing, T. Hempel, M. Noltemeyer, A. Dadgar, J. Christen, and A. Krost;
Impact of AlN seeding layer growth rate in MOVPE growth of semi-polar gallium nitride structures on high index silicon
Phys. Status Solidi B 248, No. 3 (2011) 594-599. (link) - L. Schade, U.T. Schwarz, T. Wernicke, S. Ploch, M. Weyers, and M. Kneissl;
Spectral properties of polarized light from semipolar grown InGaN quantum wells at low temperatures
Phys. Status Solidi C 9 (2011), 700-703 (link) - L. Schade, U.T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M. Weyers and M. Kneissl;
On the optical polarization properties of semipolar InGaN quantum wells
Appl. Phys. Lett. 99, 051103 (2011) . (link) - L. Schade, U.T. Schwarz, T. Wernicke, M. Weyers, and M. Kneissl;
Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells
Phys. Status Solidi B 248, No. 3 (2011) 638-646. (link) - W.G. Scheibenzuber, and U.T. Schwarz;
Polarization switching of the optical gain in semi-polar InGaN quantum wells
Phys. Status Solidi B 248, No. 3 (2011) 647-651. (Link) - S. Schwaiger, S. Metzner, T. Wunderer, I. Argut, J. Thalmair, F. Lipski, M. Wieneke, J. Bläsing, F. Bertram, J. Zweck, A. Krost, J. Christen and F. Scholz;
Growth and coalescence behavior of semipolar (1122) GaN on pre-structured r-plane sapphire substrates
Phys. Status Solidi B 248, No. 3 (2011) 588-593. (link) - M. Thomsen, H. Jönen, U. Rossow, and A. Hangleiter;
Effects of spontaneous polarization on GaInN/GaN quantum well structures
J. Appl. Phys. 109, 123710 (2011). (link) - M. Thomsen, H. Jönen, U. Rossow, and A. Hangleiter;
Spontaneous polarization field in polar and nonpolar GaInN/GaN quantum well structures
Phys. Status Solidi B 248, No. 3 (2011) 627-631. (link) - I. Tischer, M. Feneberg, M. Schirra, H. Yacoub, R. Sauer, K. Thonke, T. Wunderer, F. Scholz, L. Dieterle, E. Müller, and D. Gerthsen;
Stacking fault-related luminescence features in semi-polar GaN
Phys. Status Solidi B 248, No. 3 (2011) 611-615. (link) - C. Wächter, A. Meyer, S. Metzner, M. Jetter, F. Bertram, J. Christen, and P. Michler;
High wavelength tunability of InGaN quantum wells grown on semipolar GaN phyramid facets
Phys. Status Solidi B 248, No. 3 (2011) 605-610. (link) - T. Wernicke, S. Ploch, V. Hoffmann, A. Knauer, M. Weyers, and M. Kneissl;
Surface morphology of homoepitaxial GaN grown on non- and semipolar GaN substrates
Phys. Status Solidi B 248, No. 3 (2011) 574-577. (link) - M. Wieneke, M. Noltemeyer, B. Bastek, A. Rohrbeck, H. Witte, P. Veit, J. Bläsing, A. Dadgar, J. Christen, and A. Krost;
Heavy Si doping: The key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults?
Phys. Status Solidi B 248, No. 3 (2011) 578-582. (link) - T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R.A.R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U.T. Schwarz, A. D. Dräger, A. Hangleiter and F. Scholz;
Three-dimensional GaN for semipolar light emitters
Phys. Status Solidi B 248, No. 3 (2011) 549-560. (link) - R. Aleksiejunas, L. Lubys, M. Vengris, K. Jarasiunas, T. Wernicke, V. Hoffmann, C. Netzel, A. Knauer, M. Weyers and M. Kneissl;
Study of excess carrier dynamics in polar, semipolar and non-polar InGaN epilayers and QWs
Phys. Status Solidi C 8, 2154 (2011) (link) - M. Barchuk, V. Holy, D. Kriegner, J. Stangl, S. Schwaiger and F. Scholz;
Diffuse x-ray scattering from stacking faults in a-plane GaN epitaxial layers
Phys. Rev. B 84, 094113 (2011) (link) - M. Jetter, C. Wachter, A. Meyer and P. Michler;
MOVPE grown quaternary AlInGaN layers for polarization matched quantum wells and efficient active regions
Phys. Status Solidi C 8, 2163 (2011) (link) - M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A.
Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. Johnson and M. Weyers;
Advances in group III-nitride-based deep UV light-emitting diode technology
Semicond. Sci. Technol. 26, 014036 (2011) (link) - T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen,
H. Bremers, U. Rossow and A. Hangleiter;
Origin of the "green gap": Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures
Phys. Status Solidi C 8, 2170 (2011) (link) - C. Netzel, C. Mauder, T. Wernicke, B. Reuters, H. Kalisch, M. Heuken, A. Vescan, M. Weyers and M. Kneissl;
Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells
Semicond. Sci. Technol. 26, 105017 (2011) (link) - C. Wächter, A. Meyer, S. Metzner, M. Jetter, F. Bertram, J. Christen and P. Michler;
Spectral features in different sized InGaN/GaN micropyramids
Phys. Status Solidi C 8, 2387-2389 (2011) (link) - H. Witte, M. Wieneke, A. Rohrbeck, K. M. Guenther, A. Dadgar and A. Krost;
Unintentional doping of a-plane GaN by insertion of in situ SiN masks
J. Phys. D: Appl. Phys. 44, 085102 (2011) (link) - N. Izyumskaya, S. J. Liu, S. Okur, M. Wu, V. Avrutin, U. Ozgur, S.
Metzner, F. Bertram, J. Christen and H. Morkoc;
Optical properties of nonpolar (1-100) and semipolar n(1-101) GaN grown by MOCVD on Si patterned substrates
Proc. SPIE Int. Soc. Opt. Eng. (SPIE, ADDRESS, 2011), Vol. 7939, p. 79391W (link) - U.T. Schwarz and F. Scholz;
Rosige Aussichten für grünes Licht
Phys Journal 10, 21-26 (2011)