Publikationen 2000

  • S.A. Brown, R.J. Reeves, C. Haase, R. Cheung, C. Kirchner, M. Kamp;
    Long-period time-dependent luminescence in reactive ion-etched GaN
    Physica E 7, pp. 958-962 (2000) (link)
  • S.A. Brown, R.J. Reeves, B. Rong, R. Cheung, M. Seyboth, C. Kirchner, M. Kamp;
    Argon plasma etching of gallium nitride: spectroscopic surprises
    Nanotechnology 11, pp. 263-269 (2000) (link)
  • R. Cheung, R.J. Reeves, S.A. Brown, E. van der Drift, M. Kamp;
    Effects of dry processing on the optical properties of GaN
    J. Appl. Phys. 88(12), pp. 7110-7114 (2000) (link)

  • H.Y.A. Chung, C. Wang, C. Kirchner, M. Seyboth, V. Schwegler, M. Scherer, M. Kamp, K.J. Ebeling, R. Beccard, M. Heuken;
    Hydride Vapour Phase Epitaxy Growth of GaN Layers under reduced Reactor Pressure
    phys. stat. sol. 180, pp. 257-260 (2000) (link)
  • Fischer, J. Christen, M. Zacharias, V. Schwegler, C. Kirchner, M. Kamp;
    Spatially resolved imaging of the spectral emission characteristic of an InGaN/GaN-MQW-Light-Emitting Diode by scanning electroluminescence microscopy
    Jpn. J. Appl. Phys. 39 (4B), pp. 2414-2416 (2000) (link)

  • M. Kamp;
    Solutions for heteroepitaxial growth of GaN and their impact on devices
    Opt. and Quant. Electron. 32, 227-248 (2000) invited. (link)

  • C. Kirchner, V. Schwegler, F. Eberhard, M. Kamp, K.J. Ebeling, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski;
    MOVPE Homoepitaxy of high-quality GaN: Crystal growth and Devices
    Progress in Crystal Growth and Characterization of Materials, pp. 57-83 (2000) invited. (link)
  • T. Rotter, D. Mistele, J. Stemmer, F. Fedler, J. Aderhold, J. Graul, V. Schwegler, C. Kirchner, M. Kamp, M. Heuken;
    Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions
    Appl. Phys. Lett. 76(26), pp. 3923-3925 (2000) (link)

  • G. Salviati, N. Armani, C. Zanotti-Fregonara, E. Gombia, M. Albrecht, H.P. Strunk, M. Mayer, M. Kamp, A. Gasparotto;
    Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire
    MRS Internet J. Nitride Semicond. Res. 5S1, W11.50 (2000) pp. 754-760 (link)

  • V. Schwegler, M. Seyboth, S.S. Schadt, M. Scherer, C. Kirchner, M. Kamp, U. Stempfle, W. Limmer, R. Sauer;
    Temperature Distribution in InGaN-MQW LEDs under Operation
    MRS Internet J. Nitride Semicond. Res. 5S1, W11.18 (2000)

  • V. Schwegler, M. Seyboth, C. Kirchner, M. Scherer, M. Kamp, P. Fischer, J. Christen, M. Zacharias;
    Spatially resolved Electroluminescence of InGaN-MQW-LEDs
    MRS Internet J. Nitride Semicond. Res. 5S1, W1.6 (2000)
  • M. Zacharias, P. Fischer, J. Christen, V. Schwegler, C. Kirchner, M. Kamp;
    Characterization of InGaN/GaN Light Emitting Diodes by Scanning Electroluminescence Microscopy
    Memoirs of The Institute of Science and Industrial Research, Osaka University Vol. 57, pp. 169-170 (2000)