Publikationen 2003

  • C. Eichler, S.S. Schad, M. Seyboth, F. Habel, M. Scherer, S. Miller, A. Weimar, A. Lell, V. Härle, D. Hofstetter;
    Time resolved study of GaN-based laser diode characteristics during pulsed operation
    phys. stat. sol. (c) 0 (7) (2003) pp. 2283-2286 (link)

  • F. Habel, M. Seyboth;
    Determination of dislocation density in epitaxially grown GaN using an HCL etching process
    phys. stat. sol. (c) 0 (7) (2003)pp. 2448-2451 (link)

  • D. Hofstetter, S.S. Schad, H. Wu, W.J. Schaff, L.F. Eastman;
    GaN/AlN-based quantum-well infrared photodetector for 1.55µm
    Appl. Phys. Lett. 83 (2003) pp. 572-574 (link)

  • E. Kohn, I. Daumiller, M. Kunze, M. Neuburger, M. Seyboth, T.J. Jenkins, J.S. Sewell, J. Van Norstand, Y. Smorchkova, U.K. Mishra, Transient
    Characteristics of GaN-based Heterostructure Field-Effect Transistors
    IEEE Transactions on Microwave Theory and Techniques 51(2), pp. 634-642 (2003) (link)

  • M. Neuburger, I. Daumiller, M. Kunze, M. Seyboth, T. Jenkins, J. Van Nostrand, E. Kohn;
    Influence of polarization on the properties of GaN based FET structures.
    Physica Status Solidi C 0 (2003) pp. 1919-1939 (link)
  • S.S. Schad, B. Neubert, M. Seyboth, F. Habel, C. Eichler, M. Scherer, P. Unger, W. Schmid, C. Karnutsch, K.P. Streubel;
    Absorption of guided modes in light-emitting diodes
    SPIE-Int. Soc. Opt. Eng. Proceedings of Spie - the International Society for Optical Engineering, vol.4996, 2003, pp. 10-17; USA (link)