Publikationen 2012

  • K. Forghani, L. Schade, U. T. Schwarz,  F. Lipski, O. Klein, U. Kaiser and F. Scholz;
    Strain and defects in Si-doped (Al)GaN epitaxial layers
    Journal of Applied Physics 112, (2012), pp. 093102 - 093102-9 (link)

  • K. Forghani, M. Gharavipour, F. Scholz and K. Thonke;
    Investigations on Si-doped AlGaN: Below and above the Mott density
    Phys. Status Solidi C 9, (2012) No. 3-4, pp. 492-495  (link)

  • F. Lipski, M. Klein, X. Yao, and F. Scholz;
    Studies about wafer bow of freestanding GaN substrates grown by hydride vapor phase epitaxy
    Journal of Crystal Growth 352, (2012) pp. 235-238 (link)

  • F. Scholz, St. Schwaiger, J. Däubler, I. Tischer, K. Thonke, S. Neugebauer, S. Metzner, F. Bertram, J. Christen, H. Lengner, J. Thalmair and J. Zweck;
    Semipolar GaInN quantum well structures on large area substrates
    Phys. Stat. Solidi B 249, No. 3 (2012) pp. 464 - 467  (link)

  • F. Scholz;
    Semipolar GaN grown on foreign substrates: a review
    Semicond. Sci. Technol. 27 (2012) pp. 024002 1 - 15  (link)

  • R. Gutt, T. Passow, M. Kunzer, W. Pletschen, L. Kirste, K. Forghani, F. Scholz, K. Köhler and J. Wagner;
    AlGaN-Based 355 nm UV Light-Emitting Diodes with High Power Efficiency
    Applied Physics Express 5 (2012) pp. 032101  (link)

  • H. Jönen, H. Bremers, U. Rossow, T. Langer, A. Kruse, L. Hoffmann, J. Thalmair, J. Zweck, S. Schwaiger, F. Scholz and A. Hangleiter;
    Analysis of indium incorporation in non- and semipolar GalnN QW structures: comparing x-ray diffraction and optical properties
    Semicond. Sci. Technol. 27 (2012) pp. 024013 1-8  (link)

  • M. Lohr, R. Schregle, M. Jetter, C. Wächter, Th. Wunderer, F. Scholz and J. Zweck;
    Differential phase contrast 2.0--Opening new "fields" for an established technique
    Ultramicsoscopy 117 (2012) pp. 7-14 (link)

  • T. Passow, R. Gutt, M. Kunzer, L. Kirste, W. Pletschen, K. Forghani, F. Scholz, K. Köhler and J. Wagner;
    Effect of In incorporation into the quantum well active region on the efficiency of AlGaN-based ultraviolet light-emitting diodes
    Phys. Status Solidi C 9 (2012) No. 3-4, pp. 794-797  (link)