Publikationen 2015

  • M. Alimoradi Jazi, T. Meisch, M. Klein and F. Scholz;
    Defect reduction in GaN regrown on hexagonal mask structure by facet assisted lateral overgrowth
    J. Cryst. Growth 429 (2015) pp. 13-18 (link)

  • M. Caliebe, T. Meisch, M. Madel and F. Scholz;
    Effects of miscut of prestructured sapphire substrates and MOVPE growth conditions on (11-22) oriented GaN
    J. Cryst. Growth  414 (2015) pp. 100-104  (link)

  • R. A. R. Leute, J. Wang, T. Meisch, J. Biskupek, U. Kaiser and F. Scholz;
    Blue to true green LEDs with semipolar quantum wells based on GaN nanostripes
    Phys. Status Solidi C 12 (2015) pp. 376-380 (link)

  • B. Westenfelder, J. Biskupek, J. C. Meyer, S. Kurasch, X. Lin, F. Scholz, A. Gross and U. Kaiser;
    Bottom-up formation of robust gold carbide
    Scientific Reports 5 (2015) No. 8891, pp. 1-6 (link)

  • S. Bauer, S. Lazarev, M. Bauer, T. Meisch, M. Caliebe, V. Holy, F. Scholz and T. Baumbach;
    Three-dimensional reciprocal space mapping with a two-dimensional detector as a low-latency tool for investigating the influence of growth parameters on defects in semipolar GaN
    J. Appl. Cryst. 48, (2015) pp. 1000-1010 (link)

  • D. V. Dinh, M. Akhter, S. Presa, G. Kozlowski, D. O'Mahony, P. P. Maaskant, F. Brunner, M. Caliebe, M. Weyers, F. Scholz, B. Corbett and P. J. Parbrook;
    Semipolar (11-22) InGaN light-emitting diodes grown on chemically-mechanically polished GaN templates
    Phys. Status Solidi A 212 (2015) pp. 2196-2200 (link)

  • Y. Han, M. Caliebe, M. Kappers, F. Scholz, M. Pristovsek and C. Humphreys;
    Origin of faceted surface hillocks on semi-polar (1122) GaN templates grown on pre-structured sapphire
    J. Cryst. Growth 415 (2015) pp. 170-175 (link)

  • M. Karlušic, R. Kozubek, H. Lebius, B. Ban-d'Etat, R.A. Wilhelm, M. Buljan, Z. Siketic, F. Scholz, T. Meisch, M. Jakšic, S. Bernstorff, M. Schleberger and B. Šantic;
    Response of GaN to energetic ion irradiation: conditions for ion track formation
    J. Phys. D: Appl. Phys. 48 (2015) 325304 (12pp) (link)

  • B. Neuschl, M. L. Gödecke, K. Thonke, F. Lipski, M. Klein, F. Scholz and M. Feneberg;
    Zeeman spectroscopy of the internal transition 4T1 to 6A1 of Fe3+ ions in wurtzite GaN
    J. Appl. Phys. 118, (2015) 215705 (10pp) (link)

  • I. Tischer, M. Hocker, B. Neuschl, M. Madel, M. Feneberg, M. Schirra, M. Frey, M. Knab, P. Maier, T. Wunderer, R.A.R. Leute, J. Wang, F. Scholz, J. Biskupek, J. Bernhard, U. Kaiser, U. Simon, L. Dieterle, H. Groiss, E. Müller, D. Gerthsen and K. Thonke;
    Optical properties of defects in nitride semiconductors
    J. Mat. Res. 20, (2015) pp. 2977-2990 (link)