Publikationen 2016

  • M. Caliebe, Y. Han, M. Hocker, T. Meisch, C. Humphreys, K. Thonke and F. Scholz;
    Growth and coalescence studies of (1122) oriented GaN on pre-structured sapphire substrates using marker layers
    Phy.Status Solidi B 253 (2016) No. 1 pp. 46-53
  • M. Caliebe, S. Tandukar, Z. Cheng , M. Hocker , Y. Han, T. Meisch, D. Heinz, F. Huber, S.Bauer, A.Plettl, C.  Humphreys, K. Thonke, F. Scholz;
    Influence of trench period and depth on MOVPE grown (1122)GaN on patterned r-plane sapphire substrates
    Journal of CrystalGrowth 440 (2016) pp. 69–75 (
  • R.A.R. Leute, D. Heinz, J. Wang, T. Meisch, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, J. Christen, M. Martens, T. Wernicke, M. Kneissl, S. Jenisch, S. Strehle, O. Rettig, K. Thonke and F. Scholz;
    Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells
    Phys.Status Solidi B 253 (2016) No. 1, pp. 180-185 (
  • T. Meisch, R. Zeller, S. Schörner, K. Thonke, L. Kirste, T. Fuchs and F. Scholz;
    Doping behavior of (1122) GaN grown on patterned sapphire substrates
    Status Solidi B 253 (2016), No. 1 pp. 164-168 (link)
  • F. Scholz, J. Koch, A. Frey, and A. C. Jones;
    Organometallic Source Materials for III–V Epitaxy.
    In: Saleem Hashmi (editor-in-chief), Reference Module in Materials Science and Materials Engineering.
    Oxford: Elsevier; 2016. pp. 1-6.
  • F. Scholz, T. Meisch and K. Elkhouly;
    Efficiency studies on semipolar GaInN-GaN quantum well structures
    Phys.Status Solidi A 213 (2016) pp. 3117-3121 (

  • F. Scholz, M. Caliebe, G. Gahramanova, D. Heinz, M. Klein, R.A.R. Leute, T. Meisch, J. Wang, M. Hocker and K. Thonke;
    Semipolar GaN-based heterostructures on foreign substrates
    Phys.Status Solidi B 253 (2016) No.1 pp 13-22

  • J. Wang, T. Meisch, D. Heinz, R. Zeller and F. Scholz;
    Internal quantum efficiency and carrier injection efficiency of c-plane, (1011) and (1122) InGaN/GaN-based light-emitting diodes
    Phys. Status Solidi B 253 (2016) No. 1, pp. 174-179

  • T. Aschenbrenner, M. Schowalter, T. Mehrtens, K. Müller-Caspary, M. Fikry, D. Heinz, I. Tischer, M. Madel, K. Thonke, D. Hommel, F. Scholz and A. Rosenauer;
    Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy
    Journal of Applied Physics 119 (2016) pp. 175701-1--6 (

  • E.R. Buß, P. Horenburg, U.Rossow, H. Bremers, T. Meisch, M. Caliebe, F. Scholz and A. Hangleiter;
    Non- and semipolar AllnN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices
    Phys.Status Solidi B 253 (2016) No. 1 pp. 84-92

  • Brian Corbett, Liverios Lymperakis, Ferdinand Scholz, Colin Humphreys, Frank Brunner, and Tobias Meyer;
    Scalable semipolar gallium nitride templates for high-speed LEDs
    SPIE News Room 2016, DOI 10.1117/2.1201605.006482

  • B. Corbett, Z. Quan, D. V. Dinh, G. Kozlowski, D. O`Mahony, M. Akhter,
    S. Schulz, P. Parbrook, P. Maaskant, M. Caliebe, M. Hocker, K. Thonke, F. Scholz, M. Pristovsek, Y. Han, C. J. Humphreys, F. Brunner, M. Weyers, T. M. Meyer and L. Lymperakis;
    Development of semipolar (11-22)LEDs on GaN templates
    Heonsu Jeon (Ed.)
    Proc. SPIE 9768 (2016) pp. 97681G-1--97681G-9

  • Y. Han, M. Caliebe, F. Hage, Q. Ramase, M. Pristovsek, T. Zhu, F. Scholz and C. Humphreys;
    Toward defect-free semi-polar GaN templates on pre-structured sapphire
    Phys. Status Solidi B 253 (2016) pp. 834-839

  •  M. Hocker, I. Tischer, B. Neuschl, K. Thonke, M. Caliebe. M. Klein and F. Scholz;
    Stacking fault emission in GaN: Influence of n-type doping
    Journal of Applied Physics 119 (2016) pp. 185703-1--6 (


    M. Knab, M. Hocker, T. Felser, I. Tischer, J. Wang, F. Scholz and K. Thonke;
    EBIC investigations on polar and semipolar InGaN LED structures
    Phys.Status Solidi B 253 (2016) No. 1, pp. 126-132 (

  • T. Langer, M. Klisch, F.A. Ketzer, H. Jönen, H. Bremers, U. Rossow, T. Meisch, F. Scholz and A. Hangleiter;
    Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells
    Phys.Status Solidi B 253 (2016) No. 1, pp. 133-139 (