• D. Heinz, F. Huber, M. Spiess, M. Asad, L. Wu, O. Rettig, D. Wu, B. Neuschl, S. Bauer, Y. Wu, S. Chakrabortty, N. Hibst, St. Strehle, T. Weil, K. Thonke and F. Scholz;
  GaInN quantum wells as optochemical transducers for chemical sensors and biosensor
  IEEE Journal of Selected Topics in Quantum Electronics, Vol. 23, Nr. 2 (2017) pp. 1900109-1--9 (link)
  
• M. Hocker, P. Maier, I. Tischer, T. Meisch, M. Caliebe, F. Scholz, M. Mundszinger, U. Kaiser and K. Thonke;
  Three-dimensional cathodoluminescence characterization of a semipolar GaInN based LED sample
  Journal of Applied Physics 121 (2017) pp. 075702-1--7 (link)

• Y. Li, H. Qi, T. Meisch, M. Hocker, K. Thonke, F. Scholz and U. Kaiser;
  Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple
  quantum wells grown on a (1011) semipolar GaN template
  Applied Physics Letter 110 (2017) pp. 022105-1--022105-4 (link)
  
• K. Lorenz, E. Wendler, A. Redondo-Cubero, N. Catarino, M.-P. Chauvat, S. Schwaiger,
  F. Scholz, E. Alves, P. Ruterana;
  Implantation damage formation in a-, c- and m-plane GaN
  Elsevier Acta Materialia 123 (2017)  pp. 177-187 (link)
  
• F. Scholz, K. Thonke and T. Weil;
  Sensitiv und selektiv: Optische Gas- und Biosensorik mit Halbleiter-Heterostrukturen
  Laborpraxis (April 2017) pp. 44-46 (link)

• F. Scholz;
  Compound Semiconductors: Physics, Technology and Device Concepts
  Pan Stanford, Singapore (2017) (link)