• S. Riedmüller, C. Steinmann, J. Grünenpütt, F. Scholz and H. Blanck
  Improvement of Ohmic Contact for InAIGaN/AIN/GaN HEMTs with Recess Etching
  Phys. Status Solidi A 215 (2018) pp. 1700456-1-5 (link).

 

• O. Rettig, J. Scholz, N. Steiger, S. Bauer, T. Hubácek, M. Zíková, Y. Li, H. Qi, J. Biskupek, U. Kaiser, K. Thonke, and F. Scholz
  Investigation of boron containing AlN and AlGaN layers grown by MOVPE
  Phys. Status Solidi B 255 (2018) pp. 1700510-1-9 (link).