Publikationen 2019
- F. Scholz;
MOVPE of Group-III Heterostructures for Optoelectronic Applications;
Cryst. Res. Technol. 2019, 1900027 (published on-line first, DOI: 10.1002/crat.201900027, link).
- Jassim Shahbaz, Martin Schneidereit, Klaus Thonke, and Ferdinand Scholz;
Functionalized GaN/GaInN heterostructures for hydrogen sulfide sensing;
Jpn. J. Appl. Phys. 58, SC1028 (2019) (link).
- P. Mendes, K. Lorenz, E. Alves, S. Schwaiger, F. Scholz, S. Magalhães;
Measuring strain caused by ion implantation in GaN;
Mat. Sci. Semicond. Proc. 98 (2019) 95.