• F. Scholz; 
  MOVPE of Group-III Heterostructures for Optoelectronic Applications;
  Cryst. Res. Technol. 2019, 1900027 (published on-line first, DOI: 10.1002/crat.201900027, link).
   
• Jassim Shahbaz, Martin Schneidereit, Klaus Thonke, and Ferdinand Scholz;
  Functionalized GaN/GaInN heterostructures for hydrogen sulfide sensing;
  Jpn. J. Appl. Phys. 58, SC1028 (2019) (link).
   
• P. Mendes, K. Lorenz, E. Alves, S. Schwaiger, F. Scholz, S. Magalhães;
  Measuring strain caused by ion implantation in GaN;
  Mat. Sci. Semicond. Proc. 98 (2019) 95.