Seminar Talks Winter Term
Wednesday, 18.10.2006
- Wahl, Dietmar
Growth of InAs Quantum Dots Assisted by Self-assembled Metallic Nanocluster
Wednesday, 25.10.2006
- Safonov, Ivan M.
Lab Photonics: Interests and Abilities
Wednesday, 29.11.2006
- Lipski, Frank
Measurement of piezoelectric fields in InGaN/GaN quantum wells by optical spectroscopy
Wednesday, 06.12.2006
- Demaria, Frank
Optically Pumped Semiconductor Disc Lasers
Wednesday, 13.12.2006
- 1.Wunderer, Thomas
Semipolar GaN-LED
- 2.Riedl, Michael
Strain Compensated Semiconductor Disk Lasers and VCSELs
Wednesday, 20.12.2006
- Hertkorn, Joachim
Vertical Conductivity in n-type AlGaN/GaN Superlattices
Wednesday, 17.01.2007
- Stach, Martin
Monolithically Integrated Transceiver Chips
Wednesday, 24.01.2007
- 1.Kardosh, Ihab
Optimization of strain compensated bottom-emitting VCSELs
- 2.Rinaldi, Fernando
MBE Growth and Characterization of Quantum Well Pumped Disk Lasers and much more
Wednesday, 31.01.2007
- 1.Schwarz, Wolfgang
External cavity DBR mirrors by PECVD and feedback dependent threshold in VCSELs
- 2.Gadallah, Abdel-Sattar
Oblong-Shaped VCSELs with Pre-Defined Mode Patterns
Wednesday, 07.02.2007
- 1.Kroner, Andrea
Linear VCSEL Arrays for Particle Separation and Sorting
- 2.Thapa, Sarad Bahadur
Effect of Initial Growth Process and Si Incorporation on Structural and Spectroscopic Properties of AlN Grown by MOVPE
Wednesday, 14.02.2007
- 1.Brüninghoff, Stefanie (External)
GaN-based Power-Laser - Development of p-Contact
- 2.Brückner, Peter
Free Standing GaN Using SiN Interlayer
Special Seminar
Tuesday, 20.02.2007, Time: 11:00 hr.
Location: Library, Institute of Optoelectronics
- Speaker: Dr. Elke Meissner (Fraunhofer Insitute of Integrated Systems and Device Technology)
- Title: Überblick über die Eigenschaften von GaN-Substraten aus verschiedenen Herstellungsverfahren