Quantum nanophotonics based on defect centers in two-dimensional materials

Applications in quantum information processing and, in particular, quantum nanophotonics rely on single photon sources with high-degree of integrateability. Solid-state quantum emitters in low-dimensional hosts enable completely new architectures with novel designs for
integrated quantum nanophotonics. Very promising optically active defect center are hosted in layered hexagonal boron nitride (hBN) with emission wavelength distributed over a large spectral range from 580 nm to 800 nm, high brightness, large Debye-Waller factor, high polarization contrast and high photo-stability. Recently, we have demonstrated resonant excitation and observed Fourier-limited linewidth which are the cornerstones for indistinguishable, single photon emission paving the way for remote entanglement distribution and optical coherent control of quantum states. We are aiming to develop novel quantum nanophotonic platforms for applications in quantum information processing and quantum sensing.

Selected references:
A. Dietrich et al.,
"Observation of Fourier transform limited lines in hexagonal boron nitride" Phys. Rev. B 98, 081414(R) (2018)

T. T. Tran et al., “Resonant Excitation of Quantum Emitters in Hexagonal Boron Nitride”. ACS Photonics 5 (2), pp 295–300 (2018)