• C. Hums, A. Gadanecz, A. Dadgar, J. Blaesing, P. Lorenz, S. Krischok, F. Bertram, A. Franke, J. A. Schäfer, J. Christen and A. Krost;
  AlInN/GaN based multi quantum well structures - growth and optical properties
  phys. stat. sol. (c) 6, S451 (2009).
  
  
• W. G. Scheibenzuber, U. T. Schwarz, R. G. Veprek, B. Witzigmann and A. Hangleiter;
  Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes
  Phys. Rev. B 80, 115320 (2009). (Link)
  
  
• F. Scholz, T. Wunderer, B. Neubert, M. Feneberg and K. Thonke;,
  GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets",
  MRS Bulletin 34, 328 (2009).
  
  
• M. Wieneke, J. Blaesing, A. Dadgar, P. Veit, S. Metzner, F. Bertram, J. Christen and A. Krost;
  Micro-structural anisotropy of a-plane GaN analyzed by high resolution X-ray diffraction
  phys. stat. sol. (c) 6, S498 (2009). (Link)