Journal Publications 2014

  • E. R. Buß, U. Rossow, H. Bremers, T. Meisch, M. Caliebe, F. Scholz and A. Hangleiter;
    Intentional anisotropic strain relaxation in (1122) oriented AI1-xInxN one-dimensionally lattice matched to GaN
    Applied Physics Letters 105, 122109-1--122109-4 (2014) http://dx.doi.org/10.1063/1.4895938(link)

  • C. Netzel, J. Stellmach, M. Feneberg, M. Frentrup, M. Winkler, F. Mehnke, T. Wernicke, R. Goldhahn, M. Kneissl, M Weyers
    Polarization of photoluminescence emission from semi-polar (11–22) AlGaN layers
    Applied Physics Letters 104, 051906 (2014) (link)

  • T. Meisch, M. Alimoradi-Jazi, M. Klein and F. Scholz;
    MOVPE and HVPE GaN grown on 2" patterned sapphire substrates (20-21)
    Phys. Status Solidi C 11, No. 3-4, 537 - 540 (2014)  (link)

  • B. Neuschl, J. Helbing, K. Thonke, T. Meisch, J. Wang and F. Scholz;
    Optical absorption of polar and semipolar InGaN/GaN quantum wells for blue to green converter structures
    Journal of Applied Physics 116, 183507 (2014) (link)

  • F. Scholz, T. Meisch, M. Caliebe, S. Schörner, K. Thonke, L. Kirste,
    S. Bauer, S. Lazarev and T. Baumbach;
    Growth and doping of semipolar GaN grown on patterned sapphire substrates
    Journal of Crystal Growth 405, 97 - 101 (2014) (link)

  • Ph. Schustek, M. Hocker, M. Klein, U. Simon, F. Scholz and K. Thonke;
    Spectroscopic study of semipolar (1122)-HVPE GaN exhibiting high oxygen incorporation
    Journal of Applied Physics 116, 163515-1--163515-9 (2014) (link)

  • I. Tischer, M. Frey, M. Hocker, L. Jerg, M. Madel, B. Neuschl, K. Thonke, R.A.R. Leute, F. Scholz, H. Groiss, E. Müller, and D. Gerthsen;
    Basal plane stacking faults in semipolar AlGaN: Hints to Al redistribution
    Phys. Status Solidi B 251, No.11, 2321 - 2325 (2014) (link)

  • B. Bauer, J. Hubmann, M. Lohr, E. Reiger, D. Bougeard and J. Zweck;
    Direct detection of spontaneous polarization in wurtzite GaAs nanowires
    Appl. Phys. Lett. 104, 211902 (2014) (link)

  • R. Buß, U. Rossow, H. Bremers and A. Hangleiter;
    Lattice-matched AlInN in the initial stage of growth
    Appl. Phys. Lett. 104, 162104 (2014) (link)

  • M. Caliebe, T. Meisch, B. Neuschl, S. Bauer, J. Helbing, D. Beck, K. Thonke, M. Klein, D. Heinz and F. Scholz;
    Improvements of MOVPE grown (1122) oriented GaN on prestructured sapphire substrates using a SiNx interlayer and HVPE overgrowth
    Phys. Status Solidi C 11, 525-529 (2014) (link)

  • N. Hatui, A. Kadir, M. Frentrup, A. A. Rahman, S. Subramanian, M. Kneissl and A. Bhattacharya;
    MOVPE growth of semipolar (112-2) AlInN across the alloy composition range
    (0 ≤ x ≤ 0.55)

    J. Cryst. Growth 411, 106 (2014)

  • N. Izyumskaya, S. Okur, F. Zhang, M. Monavarian, V. Avrutin, U. Ozgur, S. Metzner, C. Karbaum, F. Bertram, J. Christen and M. Morkoc;
    Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach
    Proc. SPIE Int. Soc. Opt. Eng. (SPIE, ADDRESS, 2014), Vol. 8986, p. 898628 (link)

  • T. Langer, H. G. Pietscher, F. A. Ketzer, H. Jonen, H. Bremers, U. Rossow, D. Menzel and A. Hangleiter;
    S shape in polar GaInN/GaN quantum wells: Piezoelectric-fi eld-induced blue shift driven by onset of nonradiative recombination
    Phys. Rev. B 90, 205302 (2014) (link)

  • S. Okur, N. Izyumskaya, F. Zhang, V. Avrutin, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoc and U. Ozgu;
    Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si
    Proc. SPIE Int. Soc. Opt. Eng. (SPIE, ADDRESS, 2014), Vol. 8986, p. 89862B. (link)

  • F. Römer and B. Witzigmann;
    Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs
    Optics Express 22, 1440-1452  (2014) (link)

  • L. Schade, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl and U. T. Schwarz;
    Surface topology caused by discolations in polar, semipolar and nonpolar InGaN/GaN heterostructures
    Phys. Status Solidi A 211, 756-760  (2014) (link)

  • F. Scholz, M. Caliebe, T. Meisch, M. Alimoradi-Jazi, M. Klein, M. Hocker, B. Neuschl, I. Tischer and K. Thonke;
    Large area semipolar GaN grown on foreign substrates
    Proc. ECS (, AD-DRESS, 2014), Vol. 61, p. 101-107 (link)

  • K. Thonke, I. Tischer, M. Hocker, M. Schirra, K. Fujan, M. Wiedenmann, R. Schneider, M. Frey and M. Feneberg;
    Nano-scale characterization of semiconductors by cathodoluminescence
    IOP Conf. Ser.: Mater. Sci. Eng. 55, 012018 (2014) (link)

Journal Publications 2014

  • E. R. Buß, U. Rossow, H. Bremers, T. Meisch, M. Caliebe, F. Scholz and A. Hangleiter;
    Intentional anisotropic strain relaxation in (1122) oriented AI1-xInxN one-dimensionally lattice matched to GaN
    Applied Physics Letters 105, 122109-1--122109-4 (2014) http://dx.doi.org/10.1063/1.4895938(link)

  • C. Netzel, J. Stellmach, M. Feneberg, M. Frentrup, M. Winkler, F. Mehnke, T. Wernicke, R. Goldhahn, M. Kneissl, M Weyers
    Polarization of photoluminescence emission from semi-polar (11–22) AlGaN layers
    Applied Physics Letters 104, 051906 (2014) (link)

  • T. Meisch, M. Alimoradi-Jazi, M. Klein and F. Scholz;
    MOVPE and HVPE GaN grown on 2" patterned sapphire substrates (20-21)
    Phys. Status Solidi C 11, No. 3-4, 537 - 540 (2014)  (link)

  • B. Neuschl, J. Helbing, K. Thonke, T. Meisch, J. Wang and F. Scholz;
    Optical absorption of polar and semipolar InGaN/GaN quantum wells for blue to green converter structures
    Journal of Applied Physics 116, 183507 (2014) (link)

  • F. Scholz, T. Meisch, M. Caliebe, S. Schörner, K. Thonke, L. Kirste,
    S. Bauer, S. Lazarev and T. Baumbach;
    Growth and doping of semipolar GaN grown on patterned sapphire substrates
    Journal of Crystal Growth 405, 97 - 101 (2014) (link)

  • Ph. Schustek, M. Hocker, M. Klein, U. Simon, F. Scholz and K. Thonke;
    Spectroscopic study of semipolar (1122)-HVPE GaN exhibiting high oxygen incorporation
    Journal of Applied Physics 116, 163515-1--163515-9 (2014) (link)

  • I. Tischer, M. Frey, M. Hocker, L. Jerg, M. Madel, B. Neuschl, K. Thonke, R.A.R. Leute, F. Scholz, H. Groiss, E. Müller, and D. Gerthsen;
    Basal plane stacking faults in semipolar AlGaN: Hints to Al redistribution
    Phys. Status Solidi B 251, No.11, 2321 - 2325 (2014) (link)

  • B. Bauer, J. Hubmann, M. Lohr, E. Reiger, D. Bougeard and J. Zweck;
    Direct detection of spontaneous polarization in wurtzite GaAs nanowires
    Appl. Phys. Lett. 104, 211902 (2014) (link)

  • R. Buß, U. Rossow, H. Bremers and A. Hangleiter;
    Lattice-matched AlInN in the initial stage of growth
    Appl. Phys. Lett. 104, 162104 (2014) (link)

  • M. Caliebe, T. Meisch, B. Neuschl, S. Bauer, J. Helbing, D. Beck, K. Thonke, M. Klein, D. Heinz and F. Scholz;
    Improvements of MOVPE grown (1122) oriented GaN on prestructured sapphire substrates using a SiNx interlayer and HVPE overgrowth
    Phys. Status Solidi C 11, 525-529 (2014) (link)

  • N. Hatui, A. Kadir, M. Frentrup, A. A. Rahman, S. Subramanian, M. Kneissl and A. Bhattacharya;
    MOVPE growth of semipolar (112-2) AlInN across the alloy composition range
    (0 ≤ x ≤ 0.55)

    J. Cryst. Growth 411, 106 (2014)

  • N. Izyumskaya, S. Okur, F. Zhang, M. Monavarian, V. Avrutin, U. Ozgur, S. Metzner, C. Karbaum, F. Bertram, J. Christen and M. Morkoc;
    Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach
    Proc. SPIE Int. Soc. Opt. Eng. (SPIE, ADDRESS, 2014), Vol. 8986, p. 898628 (link)

  • T. Langer, H. G. Pietscher, F. A. Ketzer, H. Jonen, H. Bremers, U. Rossow, D. Menzel and A. Hangleiter;
    S shape in polar GaInN/GaN quantum wells: Piezoelectric-fi eld-induced blue shift driven by onset of nonradiative recombination
    Phys. Rev. B 90, 205302 (2014) (link)

  • S. Okur, N. Izyumskaya, F. Zhang, V. Avrutin, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoc and U. Ozgu;
    Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si
    Proc. SPIE Int. Soc. Opt. Eng. (SPIE, ADDRESS, 2014), Vol. 8986, p. 89862B. (link)

  • F. Römer and B. Witzigmann;
    Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs
    Optics Express 22, 1440-1452  (2014) (link)

  • L. Schade, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl and U. T. Schwarz;
    Surface topology caused by discolations in polar, semipolar and nonpolar InGaN/GaN heterostructures
    Phys. Status Solidi A 211, 756-760  (2014) (link)

  • F. Scholz, M. Caliebe, T. Meisch, M. Alimoradi-Jazi, M. Klein, M. Hocker, B. Neuschl, I. Tischer and K. Thonke;
    Large area semipolar GaN grown on foreign substrates
    Proc. ECS (, AD-DRESS, 2014), Vol. 61, p. 101-107 (link)

  • K. Thonke, I. Tischer, M. Hocker, M. Schirra, K. Fujan, M. Wiedenmann, R. Schneider, M. Frey and M. Feneberg;
    Nano-scale characterization of semiconductors by cathodoluminescence
    IOP Conf. Ser.: Mater. Sci. Eng. 55, 012018 (2014) (link)