• H. Bremers, H. Jönen, U. Rossow, S. Schwaiger, F. Scholz, and A. Hangleiter;
  Determination of indium content in semipolar GaInN multiple quantum well samples using XRD
  DPG Spring Meeting, Berlin, Germany, 2012, talk.
  
  
• M. Frentrup, T. Wernicke, J. Stellmach, S. Ploch, M. Kneissl;
  Measurement and modeling of the triclinic distortion in semi-polar and non-polar nitrides
  ICMOVPE-XVI, Busan, Korea,  2012, poster.
  
  
• D. Heinz, R.A.R. Leute, T. Wunderer, Y. Li, T. Meisch, K. Thonke, and F. Scholz;
  Engineering nitride based photonic crystal light emitters
  IWN2012, Sapporo, Japan, 2012, talk.
  
  
• D. Heinz, R.A.R. Leute, K. Thonke, F. Lipski, T. Meisch, T. Wunderer, I. Tischer, M. Hocker,  and F. Scholz;
  Photonic crystal slab based on nitride semiconductors
  DPG Spring Meeting, Berlin, Germany, 2012, talk.
  
  
• M. Hocker, I. Tischer, R.A.R. Leute, F. Scholz, and K. Thonke;
  Low voltage spatially resolved cathodoluminescence measurements on nitride semiconductors
  DPG Spring Meeting, Berlin, Germany, 2012, poster.
  
  
• A. Kruse, U. Rossow, and A. Hangleiter;
  Overcoming the limiting factors to achieve green lasing
  DPG Spring Meeting, Berlin, Germany, 2012, talk.
  
  
• T. Langer, M. Göthlich, A. Kruse, H. Jönen, H. Bremers, U. Rossow, and A. Hangleiter;
  Evidence for strain-induced defects as dominant nonradiative recombination centers in GaInN/GaN quantum wells
  DPG Spring Meeting, Berlin, Germany, 2012, talk.
  
  
• R. A. R. Leute, D. Heinz, F. Lipski, T. Meisch, K. Forghani, J. Wang, K. Thonke, and F. Scholz;
  Embedding submicrometer sized GaN stripes with semipolar quantum wells for application in light emitting diodes
  DPG Spring Meeting, Berlin, Germany, 2012, talk.
  
  
• R.A.R. Leute, D. Heinz, F. Lipski, T. Meisch, J. Wang, K. Thonke, and F. Scholz;
  Realization of light emitting diodes based on embedded submicrometer sized stripes with semipolar QWs structured by laser interference lithography and grown by selective
  ICMOVPE-XVI, Busan, Korea,  2012, talk.
  
  
• M. Lohr, C. Wächter, M. Jetter, P. Michler, and J. Zweck;
  Towards a quantitative analysis of internal electric fields in GaN/GaInN quantum wells by spatially resolved differential phase contrast microscopy
  emc2012, Manchester Central, United Kingdom, 2012, poster.
  
  
• T. Meisch, R.A.R. Leute, F. Lipski, and F. Scholz;
  Optimization studies on semipolar (10-11) GaN layers grown on 2'' wafers
  IWN2012, Sapporo, Japan, 2012, poster.
  
  
• T. Meisch, R. Leute, F. Lipski, I. Argut, S. Schwaiger and F. Scholz;
  MOVPE growth of (10-11) GaN on patterned sapphire wafers: Influence of substrate miscut
  ICMOVPE-XVI, Busan, Korea,  2012, talk.
  
  
• S. Ploch, T. Wernicke, M. Frentrup, M. Pristovsek, M. Weyers, and M. Kneissl;
  Indium incorporation efficiency and critical thickness of InGaN layers on (20-21) and (0001) GaN
  27. DGKK Workshop Epitaxie von III/V-Halbleitern, Erlangen, Germany, 2012, talk.
  
  
• S. Ploch, T. Wernicke, J. Rass, M. Pristovsek, M. Weyers and M. Kneissl;
  Growth of (20-21) AlGaN, GaN and InGaN by metal organic vapor phase epitaxy
  DPG Spring Meeting, Berlin, Germany, 2012, talk.
  
  
• J. Rass, S. Ploch, T. Wernicke, M. Weyers, and M. Kneissl;
  Waveguide optimization in semipolar (In, Al, Ga)N laser diodes
  IWN2012, Sapporo, Japan, 2012, poster.
  
  
• J. Rass, T. Wernicke, S. Ploch, M. Brendel, A. Kruse, A. Hangleiter, W. Scheibenzuber, U.T. Schwarz, M. Weyers, and Michael Kneissl;
  Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN
  SPIE Photonics West, San Francisco, CA, USA, 2012, talk.
  
  
• R. Ravash, A. Dadgar, A. Dempewolf, P. Veit, T. Hempel, J. Bläsing, J. Christen, and A. Krost;
  MOVPE growth of Semi-polar GaN LED Structures on Planar Si (112) and Si (113) Substrates
  ICMOVPE-XVI, Busan, Korea,  2012, talk.
  
  
• R. Ravash, A. Dadgar, A. Dempewolf, P. Veit, T. Hempel, J. Bläsing, J. Christen, and A. Krost;
  MOVPE growth of semi-polar GaN LED structures on planar Si (112) and Si (113) substrates --- ?
  DPG Spring Meeting, Berlin, Germany, 2012, talk.
  
  
• T. Wernicke, S. Ploch, J. Rass, L. Schade, M. Pristovsek, U.T. Schwarz, M. Weyers, and M. Kneissl;
  InGaN lasers on (20-21) GaN: Morphology, luminescence homogeneity and threshold
  27. DGKK Workshop Epitaxie von III/V-Halbleitern, Erlangen, Germany, 2012, talk.
  
  
• T. Wernicke, S. Ploch, J. Rass, L. Schade, M. Pristovsek, U.T. Schwarz, M. Weyers, M. Kneissl;
  InGaN lasers on (20-21) GaN: Morphology, luminescence, homogeneity and threshold
  IWN2012, Sapporo, Japan, 2012, talk.
  
  
• M. Wieneke, M. Feneberg, P. Veit, J. Bläsing, A. Dadgar, R. Goldhahn, and A. Krost;
  Anisotropic In-plane Strain Relaxation in a-plane GaN Induced by Low Temperature AlN Interlayer
  ICMOVPE-XVI, Busan, Korea,  2012, poster.
  
  
• J. Zweck, R. Schregle, A. Hasenkopf, and M. Lohr;
  Quantitative calibration of a differential phase contrast detector for electric field measurement
  emc2012, Manchester Central, United Kingdom, 2012, poster.