• A. Dadgar, L. Groh, S. Metzner, S. Neugebauer,  J. Bläsing, T. Hempel, F. Bertram, J. Christen, A. Krost, Z. Andreev, and B. Witzigmann;
  Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers
  Appl. Phys. Lett. 102 (2013) 062110 1-4. (link)
  
  
• M. Feneberg, K. Lange, C. Lidig, M. Wieneke, H. Witte, J. Bläsing, A. Dadgar, A. Krost, and R. Goldhahn;
  Anisotropy of effective electron masses in highly doped nonpolar GaN
  Appl. Phys. Lett. 103 (2013) 232104 1-4. (link)
  
  
• D. Heinz, R.A.R. Leute, S. Kizir, Y. Li, T. Meisch, K. Thonke, and F. Scholz;
  Ga(In)N photonic crystal light emitters with semipolar quantum wells
  Jpn. J. Appl. Phys. 52 (2013) 062101-062106. (link)
  
  
• R.A.R. Leute , D. Heinz , J. Wang, F. Lipski , T. Meisch, K. Thonke, J. Thalmair, J. Zweck and F. Scholz;
  GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures
  J. Cryst. Growth 370 (2013) 101–104. (link)
  
  
• M. Wienecke, H. Witte, K. Lange, M. Feneberg, A. Dadgar, J. Bläsing, R. Goldhahn, and A. Krost;
  Ge as a surfactant in metal-organic vapor phase epitaxy growth a-plane GaN exceeding carrier concentrations of 1020 cm-3
  Appl. Phys. Lett. 103 (2013) 012103 1-4. (link)
  
  
• J. Stellmach, F, Mehnke, M. Frentrup, C. Reich, J. Schlegel, M. Pristovsek, T.  Wernicke, M. Kneissl;
  Structural and optical properties of semipolar (11-22) AlGaN grown on (10-10) sapphire by metal-organic  vapour phase epitaxy
  Journal of Crystal Growth 367 (2013) 42-47, DOI:10.1016/j.jcrysgro.2013.01.006 (2013) 
  
  
• J. Bläsing, V. Holý, A. Dadgar, P. Veit, J. Christen, S. Ploch, M. Frentrup, T. Wernicke, M. Kneissl, and A. Krost;
  Growth and characterization of stacking fault reduced GaN (10-13) on
  sapphire
   J. Phys. D: Appl. Phys. 46, 125308 (2013) 
  
  
• J. Rass, S. Ploch, T. Wernicke, M. Frentrup, M. Weyers, and M. Kneissl
  Waveguide optimization for semipolar (In,Al,Ga)N laser diodes
  Jpn. J. Appl. Phys. 52,  (2013) (link)
  
  
• M. Frentrup, N. Hatui, T. Wernicke, A. Bhattacharya and M. Kneissl 
  Determination of lattice parameters, strain state, and composition in
  semipolar III-nitrides using high resolution X-ray diffraction
  Journal of Applied Physics 114, 213509 (2013); doi: 10.1063/1.4834521
  
  
  
• M. Deppner, F. Romer and B. Witzigmann;
  Modelling of the Auger Process in III-Nitride-Based LEDs
  Compound Semiconductor Magazine 2013, 46-49 (2013)
  
  
• N. Izyumskaya, F. Zhang, S. Okur, T. Selden, V. Avrutin, U. Ozgur, S. Metzner, C. Karbaum, F. Bertram, J. Christen and H. Morkoc;
  Optical studies of strain and defect distribution in semipolar GaN on patterned Si substrates
  J. Appl. Phys. 114, 113502-1--9 (2013) (link)
  
  
• M. Kneissl, J. Rass, L. Schade and U. T. Schwarz;
  Growth and optical properties of GaN-based non- and semipolar LEDs
  III-Nitride based light emitting diodes and applications T.-Y. Seong, J. Han, H. Amano and H. Morkoc
  (ed.) Springer Verlag, Topics in Applied Physics, Vol.126, New York, (2013), ch. 5, p. 83-119
  
  
• M. Kneissl and T. Wernicke;
  Optical and structural properties of InGaN light emitters on non- and semipolar GaN
  in III-Nitride semiconductors and their modern devices, B. Gil (ed.),University Press, Oxford, Series on Semiconductor Science and Technology 18, New York: Oxford, (2013), ch. 8, p. 244-279
  
  
• R. A. R. Leute, T. Meisch, J. Wang, J. Biskupek, U. Kaiser, M. Muller, P. Veit, F. Bertram, J. Christen and F. Scholz;
  GaN laser structure with semipolar quantum wells and embedded nanostripes
  in Conference on Lasers and Electro-Optics Pacic Rim (CLEO-PR), (2013) , p. 1-2
  
  
• S. Okur, S. Metzner, N. Izyumskaya, F. Zhang, V. Avrutin, C. Karbaum, F. Bertram, J. Christen, H. Morkoc and U. Ozgur;
  Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (1101) GaN revealed from spatially resolved luminescence
  Appl. Phys. Lett. 103, 211908-1--5 (2013) (link)
  
  
• L. Schade and U. T. Schwarz;
  Energy offset between valence band anti-crossing and optical polarization switching in semipolar InGaN quantum wells
  Appl. Phys. Lett. 102, 232101 (2013)
  
  
• R. Ravash, A. Dadgar, F. Bertram, A. Dempewolf, S. Metzner, T. Hempel, J. Christen and A. Krost;
  MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si(112) and Si(113) substrates
  J. Cryst. Growth 370, 288-292 (2013) (link)