Journal Publications 2012

  • Z. Andreev, F. Römer, and B. Witzigmann;
    Simulation of InGaN quantum well LEDs with reduced internal polarization
    Phys. Status Solidi A 209, (2012) 487–490. (link)

  • H. Jönen, H. Bremers, T. Langer, U. Rossow, and A. Hangleiter;
    Large optical polarization anisotropy due to anisotropic in-plane strain in m-plane GaInN quantum well structures grown on m-plane 6H-Sic
    Appl. Phys. Lett. 100 (2012) 151905 1-4. (link)

  • H. Jönen, H. Bremers, U. Rossow, T. Langer, A. Kruse, L. Hoffmann, J. Thalmair, J. Zweck, S. Schwaiger, F. Scholz and A. Hangleiter;
    Analysis of indium incorporation in non- and semipolar GalnN QW structures: comparing x-ray diffraction and optical properties
    Semicond. Sci. Technol. 27 (2012) 024013 18. (link)

  • M. Lohr, R. Schregle, M. Jetter, C. Wächter, T. Wunderer, F. Scholz, and J. Zweck;
    Differential phasecontrast2.0—Opening new‘‘fields’’foran
    established technique
    Ultramicroscopy 117 (2012) 7–14. (link)

  • S. Ploch, T. Wernicke, M. Frentrup, M. Pristovsek, M. Weyers, and M. Kneissl;
    Indium incorporation efficiency and critical layer thickness of (20-21) InGaN layers on GaN
    Appl. Phys. Lett. 101 (2012) 202102 1-4. (link)

  • S. Ploch, T. Wernicke, D.V. Dinh, M. Pristovsek, and M. Kneissl;
    Surface diffusion and layer morphology of (11-22) GaN grown by metal-organic vapor phase epitaxy
    J. Appl. Phys. 111 (2012) 033526 1-5. (link)

  • S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl;
    Topography of (20-21) AlGaN, GaN and InGaN layers grown by metal-organic vapor epitaxy
    J. Cryst. Growth. 356 (2012) 70-74. (link)

  • J. Rass, T. Wernicke, S. Ploch, M. Brendel, A. Kruse, A. Hangleiter, W.
    Scheibenzuber, U.T. Schwarz, M. Weyers, und M. Kneissl;
    Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN
    Proc. SPIE 8262, 826218 (2012). (link)

  • R. Ravash, A. Dadgar, F. Bertram, A. Dempewolf, S. Metzner, T. Hempel, J. Christen, and A. Krost;
    MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si (112) and Si (113) substrates
    J. Cryst. Growth.  (2012) . (link)

  • R. Ravash, P. Veit, M. Müller, G. Schmidt, A. Dempewolf, T. Hempel, J. Bläsing, F. Bertram, A. Dadgar, J. Christen, and A. Krost;
    Growth and stacking fault reduction in semi-polar GaN films on planar Si (112) and Si (113)
    Phys. Status Solidi C, (2012) 507-510. (link)

  • E. Sakalauskas, M. Wieneke, A. Dadgar, G. Gobsch, A. Krost, and R. Goldhahn
    Optical anisotropy of a-plane Al_0.8 In_0.2 N grown on an a-plane GaN pseudosubstrate
    Phys. Status Solidi A 209, (2012) 29-32. (link)

  • F. Scholz;
    Semipolar GaN grown on foreign substrates: a review
    Semicond. Sci. Technol. 27 (2012) 024002 115. (link)

  • F. Scholz, S. Schwaiger, J. Däubler, I. Tischer, K. Thonke, S. Neugebauer, S. Metzner, F. Bertram, J. Christen, H. Lengner, J. Thalmair, and J. Zweck;
    Semipolar GaInN quantum well structures on large area substrates
    Phys. Status Solidi B 249, (2012) 464–467. (link)

  • T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz and M. Kneissl;
    Indium incorporation and emission wavelength of polar, nonpolar, and semipolar InGaN quantum wells
    Semicond. Sci. Technol. 27 (2012) 024014 17 (link)

  • L. Schade, U. T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M. Weyers and M. Kneissl;
    Auger recombination in nonpolar InGaN quantum wells
    Proc. SPIE Int. Soc. Opt. Eng. (SPIE, ADDRESS,2012), Vol. 8262, p. 82620K

  • N. Izyumskaya, S. J. Liu, V. A. S. Okur, F. Zhang, U. Ozgur, S. Metzner,
    C. Karbaum, F. Bertram, J. Christen, D. J. Smith and H. Morkoc;
    Effect of MOCVD growth conditions on the optical properties of semipolar (1101) GaN on Si patterned substrates
    Proc. SPIE Int. Soc. Opt. Eng. (SPIE, ADDRESS, 2012), Vol. 8262, p.
    826224-43 (link)